N. Feizi et al. / Journal of Molecular Structure 966 (2010) 144–151
151
topography. MESP isosurface (V = ꢂ186.4 kJ molꢂ1) in the lowest
energy conformers of (HAN)n shown in Fig 9. MESP brings about
the effective localization of electron-rich regions in the molecular
system. It is evident that largely electron-rich region are localized
near O2 of the HAN unit that do not participate in hydrogen bond-
ing, and facilitate further growth of HAN assembly via this end.
MESP values at the minima (representing potential site for the
binding of electrophile) near oxygens have been reported in
Table 2S. The X1 minima near the O2 turn out to be deeper
(ꢂ262.8 kJ molꢂ1) in the terminating units (IV in case of tetramer)
as compared to that in monomer. On the contrary, minima in the
unit I get shallower as the number of HAN units in self assembly
increases. In consonant with the conclusions based on the electro-
static potential, the Hirshfeld atomic charges reported in Table 3S
in the lowest energy (HAN)n, n = 1–4 conformers reveal that charge
on oxygen O2 increases from ꢂ0.260 a.u. in HAN monomer to
ꢂ0.267 a.u. in (HAN)4 and turns out to be more electron rich. The
residual charge on the rest of the oxygens is nearly unchanged. A
decrease in the positive charge from 0.185 a.u. to 0.120 a.u. for
H1A from top unit (I) to the bottom unit (IV) has been noticed.
These inferences clearly support the ‘charge percolation’ through
H1A to O2, which has further been seen from HOMO localized over
the terminating HAN unit in the lowest energy conformers of A-
(HAN)n, n = 1–4 (Fig. 5S in supporting material).
from the CCDC, 12 Union Road, Cambridge CB21EZ, UK. Torsion an-
gles, bond distances and bond angles are deposited as supplemen-
tary material (Fax: +44 01223 336 033; E-mail address:
deposit@ccdc.cam.ac.uk).
Supplementary data associated with this article can be found, in
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Appendix A. Supplementary data
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Crystallographic data of HAN have been deposited with the
Cambridge Crystallographic Data Centre and may be obtained on
request quoting the deposition number CCDC-724554, respectively