C. Xu et al. / Solid State Communications 122 (2002) 175±179
179
[4] D.P. Yu, Z.G. Bai, Y. Ding, Q.L. Hang, H.Z. Zhang, J.J.
Wang, Y.H. Zou, W. Qian, G.C. Xiong, H.T. Zhou, S.Q.
Feng, Appl. Phys. Lett. 72 (1998) 3458.
dissolution rate of the material depends upon these charac-
ters. The viscosity of the ¯ux during calcination and the
eutectic temperature of the system also affect the formation
of the nanorods. We found that the ZnO nanorods fail to
form in the absence of NaCl and surfactant NP-9/5 or either
of them. Only in this way can the ZnO nanorods be formed
in the presence of the suitable NaCl and surfactant NP-9/5.
We speculated that NaCl may signi®cantly decrease the
viscosity of the melt, and make mobility of components in
the ¯ux become easier, i.e. provide a favorable environment
for the growth of nanorods, the surfactant NP-9/5 is thought
to be able to act a template (use other surfactants instead of
NP-9/5, no nanorods were formed), with the template action
resulting the epitaxial growth of the product, on the other
hand, the surfactant NP-9/5 is favorable to form ®ne particle
and make a `shell' surrounding the particles to prevent them
from aggregating to larger particles during the grinding
process of the precursor. A detailed study for the effect of
surfactant during the process of formation of ZnO nanorods
is in progress.
[5] H.Z. Zhang, D.P. Yu, Y. Ding, Z.G. Bai, Q.L. Hang, S.Q.
Feng, Appl. Phys. Lett. 73 (1998) 3396.
[6] J. Westwater, D.P. Gosain, S. Tomiya, S. Usui, H. Ruda,
J. Vac. Sci. Technol. B 15 (1997) 554.
[7] D.P. Yu, Q.L. Hang, Y. Ding, H.Z. Zhang, Z.G. Bai, J.J.
Wang, Y.H. Zhou, W. Qian, G.C. Xiong, S.Q. Feng, Appl.
Phys. Lett. 73(1998) 3076.
[8] Y.Q. Zhu, W.B. Hu, W.K. Hsu, M. Terrones, N. Grobert,
T. Karali, H. Terrones, J.P. Hare, P.D. Townsend, H.W.
Kroto, D.R.M. Walton, Adv. Mater. 11 (1999) 844.
[9] K. Hiruma, M. Yazawa, T. Katsuyama, K. Ogawa, K. Haraguchi,
M. Koguchi, H. Kakibayashi, J. Appl. Phys. 77 (1995) 447.
[10] G.W. Meng, L.D. Zhang, Y. Qin, F. Phillipp, S.R. Qiao, H.M.
Guo, S.Y. Zhang, Chin. Phys. Lett. 9 (1998) 689.
[11] X.T. Zhou, N. Wang, H.L. Lai, H.Y. Peng, I. Bello, N.B.
Wong, C.S. Lee, Appl. Phys. Lett. 74 (1999) 3942.
[12] T.J. Trentler, K.M. Hickman, S.C. Geol, A.M. Viano, P.C.
Gibbons, W.E. Buhro, Science 270 (1999) 1791.
[13] H. Dai, E.W. Wong, Y.Z. Yu, S.S. Fan, C.M. Lieber, Nature
375 (1999) 769.
[14] W.Q. Han, S.S. Fan, Q.Q. Li, Y.D. Hu, Science 277 (1997)
1287.
4. Conclusions
[15] W.Q. Han, S.S. Fan, Q.Q. Li, B.L. Gu, Appl. Phys. Lett. 71
(1997) 2271.
In summary, ZnO nanorods with diameters of 10±60 nm
and lengths of several micrometers have been successfully
prepared by a simple and novel route. The as-prepared ZnO
nanorods are structurally uniform, single crystalline. The
growth mechanism of the ZnO nanorods is most likely
controlled by the VS growth mechanism. Moreover, NP-9/
5 is found to play an important role in synthesizing the ZnO
nanorods. If properly choosing surfactant, the present synth-
esis method maybe extended to prepare other metal oxide
nanorods.
[16] E. Leobandung, L. Guo, Y. Wang, S.Y. Chou, Appl. Phys.
Lett. 67 (1997) 938.
[17] T. One, H. Saitoh, M. Esashi, Appl. Phys. Lett. 70 (1997)
1852.
[18] H.Z. Zhang, Y.C. Kong, Y.Z. Wang, X. Du, Z.G. Bai, J.J.
Wang, D.P. Yu, Y. Ding, Q.L. Hang, S.Q. Feng, Solid State
Commun. 109 (1999) 677.
[19] D.W. Yuan, S.G. Song, R.F. Yan, E.R. Ryba, G. Simkovich,
J. Mater. Sci. 34 (1999) 1293.
[20] M. Kitane, T. Hamabe, S. Maeda, J. Crystal Growth 102
(1990) 965.
[21] M. Kitane, T. Hamabe, S. Maeda, J. Crystal Growth 108
(1991) 277.
References
[22] M.J. Mayo, Int. Mater. Rev. 3(1996) 95.
[23] Y. Suyama, Y. Tonkyo, et al., J. Am. Ceram. Soc. 71 (1998)
391.
[1] A.M. Morales, C.M. Lieber, Science 279 (1998) 208.
[2] D.P. Yu, C.S. Lee, I. Bello, X.S. Sun, Y.H. Tang, G.W. Zhou,
Z.G. Bai, Z. Zhang, S.Q. Feng, D.P. Yu, Solid State Commun.
105 (1998) 405.
[24] T.C. Damen, S.P.S. Porto, B. Tell, Phys. Rev. 142 (1966) 570.
[25] M. Futsuhara, K. Yoshioka, O. Takai, Thin Solid Films 322
(1998) 274.
[3] G.W. Zhou, Z. Zhang, Z.G. Bai, S.Q. Feng, D.P. Yu, Appl.
Phys. Lett. 73(1998) 677.