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The substrates were cleaned in acetone and isopropyl alcohol by
sputtering the samples at 65° respect to the surface normal. The
use of this organic source ensures the absence of alteration of the
chemical composition and bonds along the specimen thickness, un-
like conventional Ar+ sources. In the depth profiles, a normalization
respect to the C1s signal has been operated, because the C1s signal
detected inside the films was due to the implanted carbon from
coronene. During spectrum acquisition the charge neutralizer was al-
ways on. “CasaXPS” software [14] was used both for quantitative peak
fitting on narrow spectra of Ti 2p, Al 2p, N1s and O 1s regions and on
survey spectra to built up the depth profiling.
Differential thermal analysis (DTA) with thermogravimetry (TGA)
was performed in a calibrated Netzsch-STA 409C from room tempera-
ture (RT) up to 1300 °C with a heating rate of 20 °C/min in flowing Ar
(99.999% purity, 20 sccm flow rate) and synthetic air (79% N2, 21% O2,
20 sccm flow rate) to mimic application conditions. Every DTA curve
was corrected using as baseline the second scan performed on the
same material. The annealing process of the coatings was performed
in vacuum (base pressure below 5 mPa) with heating and cooling
rates of 20 °C/min at temperatures of 700, 800, 900, and 1000 °C on
silicon substrates. The same coatings have been analyzed by XRD in
order to support the DTA results.
A pin-on-disk wear method was used to investigate the wear
resistance of the coatings. A bearing steel ball, 5.5 mm in diameter,
was adopted as the stationary pin. A normal load of 1 N was applied.
The sliding speed was 0.2 m/s on the circular track, for 500 rotations
of the sample. The test temperatures were 30 °C and 400 °C and the rel-
ative humidity was kept at 60%. The wear time was 40 min for each test.
Three friction tests were conducted for each specimen and for every
wear scan five measurements of the total wear volume were performed
at different points of the wear path and their average values are re-
ported. The wearing morphology of the films was investigated by
scanning electron microscope (SEM) XL40 Philips in plan view and
significant areas inside and outside the wear tracks were examined
by energy dispersive spectroscopy analyzer (EDS).
ultrasonic cleaning. The substrates were subsequently etched in situ
by Ar+ ion bombardment for 45 min, obtained by applying a RF bias
of −20 V to the substrate at an argon pressure of 6.0 × 10−1 Pa. The
coatings were deposited at a substrate temperature of 150 °C.
A Ti interlayer was deposited on the WC–6%Co substrates to improve
the adhesion of the coatings. Coatings with controlled layer thicknesses
were deposited using a stepper motor connected to the substrate holder
through a rotary feed. The substrate was moved in circular motion be-
tween the two sputtering targets using the stepper motor. The substrate
was kept underneath each target for a well predetermined time to
achieve the required multilayer thickness.
The multilayers were realized with two different methods of alter-
nation of TiAlN and AlN layers, i.e. continuously deposited with both
targets (TiAl and Al) turned on and the substrate rotating and passing
under each of the target (TiAlN/AlN-i, where “i” stands for “intermixed”)
or, alternatively, deposited with only one target turned on and with the
power switching between the two targets at each cycle (TiAlN/AlN-n,
where “n” stands for “nano-multilayer”). Look at Fig. 1 which shows
schematically in the deposition system the relative position of the
sputtering sources and the substrate table. In this way, it is easier to un-
derstand how the deposition was carried out for samples TiAlN/AlN-i
and TiAlN/AlN-n.
The multilayer period is about 4.5 nm. Coatings deposited on silicon
substrates with thickness of about 40 nm (corresponding to 9 periods in
multilayered films) were used for structural, chemical and thermal sta-
bility studies, while coatings deposited on WC–6%Co substrates with
thickness of approximately 2.2 μm (corresponding to 500 periods in
multilayered films) were used for wear tests.
The X-ray diffraction and reflectivity experiments were carried out
by using an X-ray diffractometer in parallel beam geometry (Philips
MPD PW1880, 3 kW generator) optimized for small-angle scattering
measurements. For all the measurements CuKα-radiation (λCuKα
=
0.154186 nm) was used. The X-ray diffraction measurements (XRD)
were performed at glancing incidence angle (with fixed incidence
angle ωi = 1.0°) in a range between 5° and 85°. Specular (ω, 2θ)
scans (XSR) were acquired at the grazing angle of incidence of the
X-rays equal to the exit angle 2θ measured in the range between 0°
and 9° with a step size of 0.01°.
3. Results
3.1. Structure of coatings
For X-ray photoelectron spectroscopy (XPS) studies, samples were
analyzed by AXIS Ultra DLD KRATOS using an Al Kα monochromatic
X-ray source at 600 W. Survey scans were acquired at a pass energy of
the analyzer equal to 160 eV, while narrow scans were acquired with
a pass energy of 20 eV. All spectra were recorded from an analysis
area of 700 × 300 μm2, while depth profiling was performed all along
the films' thickness using a coronene (C24H+12) organic source as
sputtering source [13]. The energy of the C24H+12 gun was 8 keV,
Fig. 2 presents the X-ray diffractograms of TiAlN, TiAlN/AlN-n and
TiAlN/AlN-i coatings. The TiAlN/AlN-n coating (see Fig. 2 in the middle)
shows the characteristic peak of the (101) direction of h-AlN s.g. P63mc
(JCPDS card #87-1054) at 2θ = 38.29°. Two broad peaks, centered at
~35° and ~40.2°, not expected, can be attributed to the hexagonal
phase of Ti2AlN (JCPDS card #18-0070). In addition there are
two peaks related to the (111) and (200) directions of the cubic
phase of TiAlN. Experimental investigations show that Ti1 − xAlxN
Fig. 1. Diagram of the deposition system and the relative positions of the target and the substrate. In this way it is easier to understand how the deposition was carried out for samples
TiAlN/AlN-i and TiAlN/AlN-n.