Journal of Solid State Chemistry p. 163 - 173 (1984)
Update date:2022-08-10
Topics:
Schoennahl
Willer
Daire
An addition of aluminum to SiC promotes its densification through the formation of a ternary carbide Al//4SiC//4. A method of preparation of this compound is proposed, and its composition formula has been determined. Al//4SiC//4 has a hexagonal structure, with lattice parameters a equals 3. 28 Angstrom and c equals 21. 72 Angstrom. Single crystals have been studied by X-ray diffraction, electronic microprobe, and optical microscopy. An epitaxial growth effect has been observed between Al//4SiC//4 and the carbide Al//4C//3, and the possible existence of a family of Al//4C//3(SiC)//n compounds is proposed.
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