C O M M U N I C A T I O N S
Figure 3. (a) SEM images of centimeter-long CNTs. The inset in (a) shows the optical image of a 10 cm long SiO2 substrate with ultralong CNT arrays
grown from end to end. (b) HRTEM images showing single-, double-, triple-, and multi-walled CNTs. Scale bars ) 5 nm. (c) Optical and SEM images of
a 1.5 cm long CNT device. The inset image shows the counter electrodes of the CNT marked with the white arrow. Scale bars ) 100 µm. (d, e) The I-V
curves of a 1.5 cm long CNT. The upper inset in (d) shows the linear I-V curve for the 10 µm long channel. The lower inset shows the gate dependence
at Vsd ) 20 V.
float over the surface due to laminar flows. These suspended
ultralong MWNT/SWNTs are useful for high-resolution transmis-
sion electron microscopy (HRTEM) investigations. The HRTEM
images show that various MWNTs, including double- or triple-
walled nanotubes, were synthesized along with SWNTs (Figure 3b).
Since CNTs grown on the substrate are parallel without overlap
to each other, we were able to characterize the electron transport
properties of extremely long CNTs by contacting individual tubes.
Arrays of electrodes were fabricated using TEM grids as stencil
masks for thermal evaporation of Au. Within the array, 100 µm2
Au pads were separated by 20 µm contact individual CNTs (Figure
3c lower panel). By contacting the last and the first electrode pads
of the two arrays separated by macroscopic distance (>1 mm), we
probed the current (I)-bias voltage (V) characteristics between two
terminals as we changed the gate voltage (Vg) at the degenerately
doped Si substrate below the 300 nm SiO2 dielectric layer (Figure
3c). While the I-V characteristic shows a linear ohmic behavior
(Figure 3d upper inset), the CNT devices whose channel lengths
are longer than ∼10 mm often indicate strongly nonlinear charac-
teristics that the current turns on only above certain bias voltages
(Figure 3d). Figure 3e shows the I-V characteristics of a 15 mm
long individual nanotube. The current increases appreciably for V
> Von ) 3 V. For a large positive bias (V > 10 V), the device
behaves like a field-effect transistor, where the current can be
modulated by the gate voltage. The rectifying I-V behavior has
been observed in SWNTs with intermolecular junctions, where tubes
with different chirality join together.13,14 The turn-on voltages and
the nonlinearity of I-V curves can be modulated by gate voltages,
implying that the potential barriers of conduction induced by local
defects or intramolecular junctions can be controlled by electric
field (Figure 3e).
linear I-V characteristics of centimeter-long CNTs would bring
about a potential application of these CNTs as multifunctional
electronic devices.16
Acknowledgment. This research was supported by the NSF
Nanoscale Science and Engineering Initiative (CHE-0117752), New
York State Office of Science, Technology, and Academic Research,
the Korea Science and Engineering Foundation (KOSEF) Creative
Research Initiative and postdoctoral fellowship, Brain Korea 21,
and the U.S. Department of Energy under Contracts DE-AC02-
98CH10886 and FG02 96ER45610.
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