ELECTRODEPOSITION OF SILICON ONTO GRAPHITE.

Article abstract of DOI:10.1149/1.2127715

Dense, well-adherent silicon was successfully deposited at minus 0. 75 plus or minus 0. 05v vs. Pt or Ag onto an inexpensive graphite substrate from the K//2SiF//6/LiK-KF molten salt system at 745 plus or minus 5 degree C. The solute concentration was in the range of 8-14 m/o. Cross-sectional views through the deposits indicate a nodular or dendritic growth up to several millimeters on top of an underlying coherent layer of 0. 2-0. 5 mm thick silicon. The polycrystalline silicon has a columnar structure with normal grain size of 250 mu m. The impurities detected were Cu, Fe, and Ni at levels less than 0. 005%. The room temperature resistivity has been found to be greater than 1 OMEGA cm.

Full text of DOI:10.1149/1.2127715

Downloaded on 2015-06-30 to IP 128.192.114.19 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-06-30 to IP 128.192.114.19 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-06-30 to IP 128.192.114.19 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-06-30 to IP 128.192.114.19 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).