Full text of DOI:10.1063/1.107876

Low resistance tungsten films on GaAs deposited by means of rapid thermal low
pressure chemical vapor deposition
A. Katz, A. Feingold, S. Nakahara, S. J. Pearton, and E. Lane
Citation: Applied Physics Letters 61, 525 (1992); doi: 10.1063/1.107876
View online: http://dx.doi.org/10.1063/1.107876
View Table of Contents: http://scitation.aip.org/content/aip/journal/apl/61/5?ver=pdfcov
Published by the AIP Publishing
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This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
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This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
129.93.24.73 On: Wed, 10 Dec 2014 20:57:58

This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
129.93.24.73 On: Wed, 10 Dec 2014 20:57:58

This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
129.93.24.73 On: Wed, 10 Dec 2014 20:57:58