FORMATION AND STRUCTURE OF CVD W FILMS PRODUCED BY THE Si REDUCTION OF WF6.

DOI: 10.1149/1.2100872

Source and publish data:

Journal of the Electrochemical Society p. 2285 - 2292 (1987)

Update date:2022-08-17

Topics:

Authors:

Green Green

Ali Ali

Boone Boone

Davidson

Feldman Feldman

Nakahara

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Article abstract of DOI:10.1149/1.2100872

The authors present data on the formation and structure of CVD W films deposited by the Si reduction of WF//6. Although the great majority of CVD W films deposited for IC applications are ostensibly deposited by H//2 reduction, the Si reduction of WF//6 always occurs first, even in the presence of copious amounts of H//2. Therefore, it is the Si reduction reaction that determines the nature of W/Si interface, and, in turn, such important properties as contact resistance and leakage current. We have found that Si reduced W films deposited between 210 degree and 700 degree C are porous and discontinuous, and are probably not effective barriers to the further diffusion of WF//6. The discontinuous structure of the films provides a simple mechanism for the growth of thick W films by Si reduction; such thick films have been observed with increasing frequency as of late and have been enigmatic, because the reaction between WF//6 and Si was thought to be self-limiting.