FORMATION AND STRUCTURE OF CVD W FILMS PRODUCED BY THE Si REDUCTION OF WF6.

Article abstract of DOI:10.1149/1.2100872

The authors present data on the formation and structure of CVD W films deposited by the Si reduction of WF//6. Although the great majority of CVD W films deposited for IC applications are ostensibly deposited by H//2 reduction, the Si reduction of WF//6 always occurs first, even in the presence of copious amounts of H//2. Therefore, it is the Si reduction reaction that determines the nature of W/Si interface, and, in turn, such important properties as contact resistance and leakage current. We have found that Si reduced W films deposited between 210 degree and 700 degree C are porous and discontinuous, and are probably not effective barriers to the further diffusion of WF//6. The discontinuous structure of the films provides a simple mechanism for the growth of thick W films by Si reduction; such thick films have been observed with increasing frequency as of late and have been enigmatic, because the reaction between WF//6 and Si was thought to be self-limiting.

Full text of DOI:10.1149/1.2100872

Downloaded on 2015-03-13 to IP 132.239.1.230 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-13 to IP 132.239.1.230 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-13 to IP 132.239.1.230 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-13 to IP 132.239.1.230 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-13 to IP 132.239.1.230 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-13 to IP 132.239.1.230 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-13 to IP 132.239.1.230 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-13 to IP 132.239.1.230 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).