ION IMPLANTATION IN TUNGSTEN LAYERS.

Article abstract of DOI:10.1149/1.2100357

Impurity concentration profiles of arsenic ion implantation in sputtered and chemical vapor deposited (CVD) tungsten layers are studied. Arsenic impurity profiles in tungsten and silicon are measured using Rutherford backscattering and secondary ion mass spectrometries. Projected range and projected range straggle for both layers are obtained from these profiles. A smaller projected range straggle, indicating narrower impurity profiles is attained in the CVD layer when compared with that in sputtered layer. However, these values are much greater than those predicted by the LSS theory. Profile tailing appearing at lower concentrations in through tungsten implantation is also studied from carrier concentration profile measurement in silicon.

Full text of DOI:10.1149/1.2100357

Downloaded on 2015-06-06 to IP 128.210.126.199 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-06-06 to IP 128.210.126.199 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-06-06 to IP 128.210.126.199 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-06-06 to IP 128.210.126.199 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).