Appl. Phys. Lett., Vol. 73, No. 16, 19 October 1998
Tang et al.
2289
and n and n are the free carrier density injected from the
0
electrode and the thermally generated carrier density, respec-
tively. At high temperature or low bias voltage, n ӷn, the
0
current is simply given by Eq. ͑1͒: I ϭI (nϩn )V,
⍀
⍀0
0
which is bulk limited and is a linear function of bias voltage
V ͑ohmic current͒. At low temperature or under high bias, n
is comparable with n . Solving Eqs. ͑1͒ and ͑2͒ yields
0
1/2 3/2
ISCLϭI n0
V , which is the so-called space-charge-
S0
limited ͑SCL͒ current. At a given temperature, the total cur-
rent of the sample is due to the superposition of the I⍀ and
the ISCL . We expect the current to be dominated by I⍀ at
low bias and high temperature and by ISCL at high bias and
low temperature. The solid lines in Fig. 4͑b͒ show the calcu-
lated currents at different temperatures. The good agreement
between experimental data and calculation also indicates that
the SWCN confined in the AFI channel is an intrinsic semi-
conductor.
In summary, we have fabricated mono-sized SWCNs
with well-defined structure symmetry. They were character-
ized through TEM, Raman scattering, and electrical transport
measurements. Our results would open a door to further de-
tailed studies on the intrinsic properties of semiconducting
carbon nanotubes presently underway.
The authors are grateful to Professor L. L. Chang, Pro-
fessor M. M. T. Loy, Professor P. Sheng, and Professor G.
K. L. Wong for their encouragement and valuable comments.
In particular, H. D. Sun is grateful to Professor G. K. L.
Wong for introducing him to this research area. The authors
thank Dr. C. T. Chen for his theoretical advice and useful
discussion. The TEM image was taken by Dr. N. Wang. This
research was supported by the RGC Committee of Hong
Kong, and the EHIA program from HKUST. J. Chen and G.
Li would like to acknowledge the support from the National
Natural Science Foundation of China.
FIG. 4. ͑a͒ Schematic diagram illustrating the experimental setup for elec-
trical measurements for the SWCNs, and ͑b͒ the experimental dc I–V
curves ͑open circles͒ at different temperatures plotted on a log–log scale.
The fittings are shown as solid lines with IϰV in the low bias region and
3
/2
IϰV in the high bias region. The inset of ͑b͒ shows the conductivity
measured near zero bias as a function of temperature.
1
S. Iijima, Nature ͑London͒ 345, 56 ͑1991͒.
See, for example, a recent review book by M. S. Dresselhaus, G. Dressel-
metal and the SWCN have different work functions, a
Schottky barrier can be formed at the lead–sample contact.
When a bias is applied, the barrier prevents one type of the
thermally excited carriers ͑say electrons͒ to pass through, but
allows the other type of carriers ͑say holes͒ to pass through
freely. Hence, electrical conduction in the SWCN is ex-
pected to be a single-carrier process. A quantitative descrip-
tion of the experimental I–V curves can then be obtained by
evaluating the current across the sample by using the trans-
2
haus, and P. C. Eklund, Science of Fullerenes and Carbon Nanotubes
͑Academic, New York, 1996͒.
T. Guo, P. Nikolaev, A. Thess, D. T. Colbert, and R. E. Smalley, Chem.
Phys. Lett. 243, 49 ͑1995͒.
C. Journet, W. K. Maser, P. Bernier, A. Loiseau, M. Lamy de la Chapelle,
S. Lefrant, P. Deniard, R. Lee, and J. E. Fischer, Nature ͑London͒ 388,
756 ͑1997͒.
S. Qiu and W. Pang, Zeolites 9, 440 ͑1989͒.
R. Saito, T. Takeya, T. Kimura, G. Dresselhaus, and M. S. Dresselhaus,
Phys. Rev. B 57, 4145 ͑1998͒.
3
4
5
6
1
1,12
7
port equation
P. C. Eklund, J. M. Holden, and R. A. Jishi, Carbon 33, 959 ͑1995͒.
A. Thess, R. Lee, P. Nikolaev, H. Dai, P. Petit, J. Robert, C. Xu, Y. H.
Lee, S. G. Kim, A. G. Rinzler, D. T. Colbert, G. E. Scuseria, D. Tombnek,
8
Jϭq͑nϩn ͒E
͑1͒
0
J. E. Fischer, and R. E. Smalley, Science 273, 483 ͑1996͒.
T. W. Ebbesen, H. J. Lezec, H. Hiura, J. W. Bennet, H. F. Ghaemi, and T.
and the Poisson equation
9
2
Thio, Nature ͑London͒ 382, 54 ͑1996͒.
A. Yu Kasumov, I. I. Khodos, P. M. Ajayan, and C. Colliex, Europhys.
Lett. 34, 429 ͑1996͒.
M. A. Lampert, A. Many, and P. Mark, Phys. Rev. 135, A1444 ͑1964͒.
K. C. Kao and W. Hwang, Electrical Transport in Solids ͑Pergamon,
London, 1981͒.
1
d͑r E͒ qn
1
1
0
1
ϭ
,
͑2͒
r
dr
⑀
where q is the carrier charge, is the carrier drift mobility, E
is the applied electric field, ⑀ is the static electric constant,
12
Downloaded 07 Jul 2013 to 141.161.91.14. This article is copyrighted as indicated in the abstract. Reuse of AIP content is subject to the terms at: http://apl.aip.org/about/rights_and_permissions