the peaks are due to the Ge(IV)/Ge(II) couple.12 At more
negative potentials (range II) the cathodic current increases due
to deposition of germanium and reduction of protons to
hydrogen. The germanium can be stripped anodically at
potentials more positive than +0.1 V vs. Ag/AgCl. Although the
current efficiency is low ( ~ 1%) micron-thick germanium
layers could be deposited.
The electrochemistry of Ge in silica templates showed results
similar to those obtained with the bare gold working electrode.
Clearly, the plating solution permeates the porous template and
has access to the gold base. The semiconductor could thus be
deposited under conditions similar to those for a bare gold
electrode.
The silica matrix could be selectively removed in 5% HF
solution to expose the plated replica. Fig. 2(a) is a SEM image
of an unannealed sample deposited in a two-electrode cell with
a cell voltage of 2.3 V, after removal of the silica. An EDAX
spectrum confirmed that germanium had indeed been deposited
and that the template had been removed. From the absence of
peaks in the X-ray diffractogram we must conclude that the as-
deposited layer is amorphous. The morphology seen in Fig. 2(a)
is typical of the whole sample. Clearly, on removal of the silica
a three-dimensional network of air-spheres in germanium is
formed. The size of the domains in the silica matrix is rather
small (1–2 mm). Germanium is also deposited in vacancies and
domain boundaries (not shown); the filling of such large voids
provides strong evidence for volume templating, with the
germanium growing uniformly from the plating base. Amor-
phous films are not suitable for photonic applications; conse-
quently we heat-treated the germanium after deposition. The
morphology seen in Fig. 2(a) does not change when the sample
is annealed for 30 min at 400 °C in a nitrogen atmosphere. From
the X-ray diffractogram of Fig. 2(b), however it is clear that the
film becomes crystalline during annealing. Peaks in the 2q
diffractogram are observed at 27.28, 45.30 and 53.68° corre-
sponding to the (111), (220) and (311) planes of germanium.
Application of the Scherrer equation to the peak widths yields
crystallite sizes in the 20–50 nm range. For the electrochemical
approach, deposition of an amorphous or a nanocrystalline layer
is desirable; formation of larger crystallites with facetted
surfaces is clearly unfavourable for perfect filling of the
voids.13
This electrochemical method provides an interesting alter-
native to the CVD approach of Míguez et al.11 High fill factors
are obtained. Two requirements have to be met in order to
produce a photonic bandgap in germanium: (i) a thicker
template crystal with long-range order is needed; (ii) because
the bandgap of germanium corresponds to the IR spectral range,
the silica spheres forming the artificial opal must have a
diameter larger than those used in the present work. In principle,
it is quite possible to meet both of these requirements.
Our results show that electrodeposition in silica templates
provides an interesting route to the formation of both random
and ordered networks of air spheres in germanium. Such
8
networks can act as a high scattering medium for IR light or as
a photonic bandgap material.
We would like to thank Dr Ralf Wehrspohn of the Max
Planck Institute, Halle for suggesting germanium electrodeposi-
tion. The work of L. B. and W. L. V. is part of the research
programme of the ‘Stichting voor Fundamenteel Onderzoek der
Materie (FOM)’, which is financially supported by the
‘
Nederlandse Organisatie voor Wetenschappelijk Onderzoek
(NWO)’. The work of A. F. v. D. and R. W. T. was financed by
NWO-CW.
Notes and references
1
2
A. Stein, Microporous Mesoporous Mater., 2001, 44–45, 227–239.
Y. A. Vlasov, X.-Z. Bo, J. C. Sturm and D. J. Norris, Nature, 2001, 414,
2
89.
3
4
J. E. G. J. Wijnhoven and W. L. Vos, Science, 1998, 281, 802.
J. E. G. J. Wijnhoven, S. J. M. Zevenhuizen, M. A. Hendriks, D.
Vanmaekelbergh, J. J. Kelly and W. L. Vos, Adv. Mater., 2000, 12,
8
88.
5
L. Xu, W. L. Zhow, C. Frommen, R. H. Baughman, A. A. Zakhidov, L.
Malkinski, J.-Q. Wang and J. B. Wiley, Chem. Commun., 2000, 997.
P. V. Braun and P. Wiltzius, Adv. Mater., 2001, 13, 482.
F. J. P. Schuurmans, M. Megens, D. Vanmaekelbergh and A. Lagendijk,
Phys. Rev. Lett., 1999, 83, 2183.
6
7
8
9
J. Gómez Rivas, R. Sprik, A. Lagendijk, L. D. Noordam and C. W.
Rella, Phys. Rev. E, 2000, 62, 4540R.
F. J. P. Schuurmans, D. Vanmaekelbergh, J. van de Lagemaat and A.
Lagendijk, Science, 1999, 284, 141.
1
0 H. Míguez, F. Meseguer, C. López, M. Holgado, G. Andreasen, A.
Mifsud and V. Fornés, Langmuir, 2000, 16, 4405.
Fig. 2 (a) SEM image of a macroporous amorphous germanium layer
electrodeposited from a propylene glycol solution after removal of the
template (b). The X-ray diffractogram indicates that after annealing for 30
min at 400 °C under nitrogen crystalline germanium is formed. The gold and
aluminium peaks are due to the substrate and sample holder. The large
background is due to the glass substrate.
11 H. Míguez, E. Chomski, F. García-Santamaría, M. Ibisate, S. John, C.
López, F. Meseguer, J. P. Mondia, G. A. Ozin, O. Toader and H. M. van
Driel, Adv. Mater., 2001, 13, 1634.
12 G. Szekely, J. Electrochem. Soc., 1951, 98, 318.
13 P. E. de Jongh, D. Vanmaekelbergh and J. J. Kelly, Chem. Mater., 1999,
11, 3512–3517.
CHEM. COMMUN., 2002, 2054–2055
2055