Interfacial compound suppression and dielectric properties enhancement of F-N codoped Zr O2 thin films

DOI: 10.1063/1.2709916

Source and publish data:

Applied Physics Letters (2007)

Update date:2022-08-29

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Authors:

Huang Huang

Chu, Paul K.

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Article abstract of DOI:10.1063/1.2709916

Fluorine and nitrogen codoped Zr O2 is produced on p -type Si (100) wafers by cathodic arc deposition and the interfacial and dielectric characteristics of the thin films are investigated. F-N codoping is found to effectively suppress the interfacial comp

Full text of DOI:10.1063/1.2709916

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Article Doi

Interfacial compound suppression and dielectric properties enhancement of F-N codoped Zr O2 thin films

DOI: 10.1063/1.2709916

Source and publish data:

Authors:

Article abstract of DOI:10.1063/1.2709916

Full text of DOI:10.1063/1.2709916

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