Inorg. Chem. 2004, 43, 7552−7556
Synthesis and Characterization of Bismuth Single-Crystalline Nanowires
and Nanospheres
Junwei Wang, Xun Wang, Qing Peng, and Yadong Li*
Department of Chemistry and the Key Laboratory of Atomic & Molecular Nanosciences
(Ministry of Education, China), Tsinghua UniVersity, Beijing, 100084, P. R. China, and
National Center for Nanoscience and Nanotechnology, Beijing, 100084, P. R. China
Received July 4, 2004
A facile solution-phase process has been demonstrated for the selective preparation of single-crystalline bismuth
nanowires and nanospheres by reducing sodium bismuthate with ethylene glycol in the presence of poly(vinyl
pyrrolidone) (PVP) or acetone. Bismuth nanobelts and Bi/Bi2O3 nanocables could be also obtained by changing
some reaction parameters. Various techniques such as XRD, EDXA, SEM, TEM, HRTEM, and FT-IR have been
used to investigate the physical characteristics of these low-dimensional bismuth nanostructures.
Introduction
nm).5 Bismuth nanowire is also an attractive material for
thermoelectric applications.6
One-dimensional (1D) nanostructures (such as wires, rods,
and tubes) have attracted extensive interest in recent years
due to their potential use as interconnects and nanoscale
electronic, optoelectronic, and sensing devices.1 Considerable
effort has been devoted to the bulk synthesis of semiconduc-
tor and metal nanowires.2,3 Bismuth, as a semimetal with a
very small band gap, provides a very attractive model system
for studying low-dimensional physical phenomena due to its
highly anisotropic Fermi surface, low carrier densities, small
carrier effective masses, and long carrier mean free path.4
Theoretical model and experiments results indicate a semi-
metal-semiconductor transition in bismuth nanowires when
the wire diameter is decreased to a certain value (about 50
However, few methods have been reported for the
preparation of bismuth nanowires until now. An effect
method has been employed to producing Bi nanowires with
diameters in the range 7-200 nm by pressure injection of
Bi liquid melt, or by infiltration and condensation of Bi vapor
into the nanochannels of an anodic alumina template.7
Electrochemical deposition has also been used to fabricate
polycrystalline Bi nanowires, by plating materials of interest
into a template of nanometer-sized pores created by nuclear
particle track etching in polycarbonate membranes.3a,8 So far,
bismuth nanowires with diameters ranging from 30 to 200
nm were extruded from the surfaces of freshly grown
composite thin films consisting of Bi and chrome-nitride
owing to the high compressive stress in these films.9
Recently, a hydrothermal process has been demonstrated by
* To whom correspondence should be addressed. E-mail: ydli@
tsinghua.edu.cn.
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7552 Inorganic Chemistry, Vol. 43, No. 23, 2004
10.1021/ic049129q CCC: $27.50
© 2004 American Chemical Society
Published on Web 10/21/2004