
Journal of the American Chemical Society p. 4212 - 4219 (1983)
Update date:2022-08-17
Topics:
Harrison, D. Jed
Calabrese, Gary S.
Ricco, Antonio J.
Dresner, Joseph
Wrighton, Mark S.
Intrinsic amorphous hydrogenated silicon, a-Si:H, has been characterized as a thin-film (8000 Angstroem) a-Si:H material.The intrinsic a-Si:H is deposited onto a 200-Angstroem thick, heavily B-doped, layer of a-Si:H on stainless steel.The 200-Angstroem p+-a-Si:H layer ensures a back contact to the valence band to give as large a field across the 8000-Angstroem intrinsic layer as possible when the intrinsic layer is contacted on the other side by an electrolyte solution containing a redox couple.The a-Si:H photocathodes give good photovoltages in aqueous and nonaqueous media, up to 855 mV, depending on the E1/2 of the redox couple in contact with the electrode.A plot of photovoltage vs.E1/2 shows a slope of only 0.42.A zero photovoltage is extrapolated to obtain for E1/2 no more negative than +0.9 V vs.SCE; the photovoltage is constant for E1/2 more negative than ca. -0.8 V vs.SCE.The slope of less than 1.0 suggests a deleterious role for states situated between the valence and conduction bands of a-Si:H.The surface of a-Si:H can be derivatized with an N,N'-dialkyl-4,4'-bipyridinium reagent followed by deposition of Pd or Pt to effect H2 evolution at an electrode potential up to ca. 700 mV more positive than on a conventional electrode.The durability and photovoltage of a-Si:H photocathodes are superior to those of single-crystal p-Si photocathodes, but the wavelength response, rectangularity of current-voltage curves, and the quantum yield for electron flow offset the advantages of the thin-film photocathode.The sustained energy conversion efficiency for 632.8-nm light to electricity or H2 is about the same for a-Si:H and single-crystal p-Si under the same conditions.Importantly, constant output of electricity for 50 h at ca. 3.2 mA/cm2 has been obtained from a-Si:H photocathode-based cells employing an aqueous Eu3+/2+/KCl redox couple/electrolyte combination.
View More
changsha chenjin chemical technology co.,LtD(expird)
Contact:86-731-84451263
Address:Room 201/217-218, 101 Jingyuan Electronic Technology Co.,Ltd. Testing Center, No.69, Lufeng Road, High-tech Development Zone, Changsha, China
Contact:+86-717-6370352
Address:168 Chengdong Avenue, Yichang, Hubei 443003, P. R.China
Quhua Zhongxing Refrigeration Technology Co.,Ltd.
Contact:+86-5708886618
Address:318 Bulding 2, No.866 Quhua Rd.,Kecheng District
SEA BRGIHT INDUSTRY CO.,LIMITED
Contact:0086 755 8622 3990
Address:Rm 17B3,GuangCaiXinTianDi Bldg,GuiMiao Rd,NanShan District,Shenzhen,China
Contact:86+21-56421993
Address:3F,BUILDING 10,NO.2889 JINKE ROAD, SHANGHAI.
Doi:10.1039/c6pp00281a
(2016)Doi:10.1002/anie.199704101
(1997)Doi:10.1016/S0040-4039(02)02877-0
(2003)Doi:10.1246/cl.2002.884
(2002)Doi:10.1039/c39760000244
(1976)Doi:10.1002/anie.201702291
(2017)