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| CAS No.: | 7440-21-3 |
|---|---|
| Name: | Silicon |
| Article Data: | 757 |
| Molecular Structure: | |
|
|
|
| Formula: | Si |
| Molecular Weight: | 32.1173 |
| Synonyms: | silicon metal;4FY;Aldrich 267414-25G;Biosilicon;CZ-N Polished wafer;FEB 450D;GKO 3516A;HGH600;Hexsil;JT 02;KDB 0.1;KDB 0.5;KDB 10;KDB 20;KR 1;Metasilicon 325A;PHC20;Polysilicon;SI 1059;SILSO;Sharp 80W;Si(100) wafer;Sicomill 4C-P;Sicomill Grade 2;Silgrain;Silgrain HQ;Silgrain Standard;Silicon 100;Silicon element;Polyeristalline silicon powder; |
| EINECS: | 231-130-8 |
| Density: | 2.33 g/cm3 |
| Melting Point: | 1410 °C |
| Boiling Point: | 2355 °C |
| Solubility: | insoluble in water |
| Appearance: | grey lustrous solid or grey powder |
| Hazard Symbols: |
 F, T
|
| Risk Codes: | 11 |
| Safety: | 26-36/37-45-7/9-33-16-36 |
| Transport Information: | UN 2922 8/PG 2 |
| PSA: | 0.00000 |
| LogP: | 0.00000 |
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| Conditions | Yield |
|---|---|
| Prepd. by laser chemical vapor pptn. at atmospheric pressure.; | 100% |
| In neat (no solvent) chemical vapor deposition with a mixt. of SiH2Cl2 and H2; | |
| With hydrogen chemical vapor deposition (hot-wall reactor, basic pressure 10 or 76 Torr, 1223 K); |
- 10025-78-2
trichlorosilane
- 7440-21-3
silicon
| Conditions | Yield |
|---|---|
| Stage #1: trichlorosilane under 3.75038 Torr; for 6h; Pulsed microwave radiation (25-50W); Stage #2: With hydrogen at 900℃; | 96.7% |
| With hydrogen chemical vapor deposition (8% SiHCl3 in H2, 1100°C); | |
| With hydrogen chemical vapor deposition (hot-wall reactor, basic pressure 10 or 76 Torr, 1223 K); |
- 112926-00-8, 7631-86-9
silica gel
- 7440-21-3
silicon
| Conditions | Yield |
|---|---|
| With magnesium oxide; magnesium In neat (no solvent) mixt. of 180 parts SiO2, 144 parts Mg and 81 parts MgO, covered with a layer of Mg in a warmed up crucible, heating at red heat in a electric furnace, begin of the react. after 2-3 min. with strong glowing, best yields with a SiO2 grainsize of 0.14mm;; treatment of the reactionproduct with HCl, H2SO4 and HF one after another, Si powder of 99.09-99.60% purity;; | 92.7% |
| With Mg; MgO In neat (no solvent) mixt. of 180 parts SiO2, 144 parts Mg and 81 parts MgO, covered with a layer of Mg in a warmed up crucible, heating at red heat in a electric furnace, begin of the react. after 2-3 min. with strong glowing, best yields with a SiO2 grainsize of 0.14mm;; treatment of the reactionproduct with HCl, H2SO4 and HF one after another, Si powder of 99.09-99.60% purity;; | 92.7% |
| With magnesium Inert atmosphere; Schlenk technique; | 46.7% |
- 10026-04-7, 53609-55-5
tetrachlorosilane
- 7440-21-3
silicon
| Conditions | Yield |
|---|---|
| With hydrogen at 700℃; under 15.0015 Torr; Product distribution / selectivity; Microwave radiation (200W); | 60% |
| Product distribution / selectivity; | |
| With KBr or KI In neat (no solvent) byproducts: KCl, Br; uncomplete reaction of SiCl4 with KBr or KI at 300-400 °C;; |
| Conditions | Yield |
|---|---|
| With H2 In neat (no solvent) chemical vapour deposition of CH4 (4.0 mol%), H2 and SiH4 (2.0 mol%) gases in reaction-sintered SiC tube within mullite tube in resistance furnace, total gas flow rate 2.7E-5 m**3/sec, total gas pressure 0.1 MPa, 1623K; transmission electron microscopy, pycnometry, IR spectroscopy, X-ray diffractometry; | A 23% B n/a |
| With H2 In neat (no solvent) chemical vapour deposition of CH4 (7.2 mol%), H2 and SiH4 (3.6 mol%) gases in reaction-sintered SiC tube within mullite tube in resistance furnace, total gas flow rate 2.7E-5 m**3/sec, total gas pressure 0.1 MPa, 1623K; transmission electron microscopy, pycnometry, IR spectroscopy, X-ray diffractometry; | A 19% B n/a |
| With H2 In neat (no solvent) chemical vapour deposition of CH4 (4.0 mol%), H2 and SiH4 (2.0 mol%) gases in reaction-sintered SiC tube within mullite tube in resistance furnace, total gas flow rate 2.7E-5 m**3/sec, total gas pressure 0.1 MPa, 1573K; transmission electron microscopy, pycnometry, IR spectroscopy, X-ray diffractometry; | A 14% B n/a |
| Conditions | Yield |
|---|---|
| at 200℃; under 116262 Torr; for 10h; Temperature; Autoclave; | A n/a B n/a C n/a D n/a E 10% |
| Conditions | Yield |
|---|---|
| In gaseous matrix byproducts: H2; other Radiation; photolysis of pure SiH4 or a 37% mixture with N2 or Ar or H2 or He (total pressure = 80 Torr) in stainless steel cell by cw CO2 laser (945.98 cm**-1=IR), strong luminescence accompanies the react.; traces of higher silanes (gases) and solid hydrogenated silicon also present, H2 or He inhibit the react.; | A 0% B 2% C n/a |
| Conditions | Yield |
|---|---|
| In neat (no solvent) evapn. in N2-plasma-flow; detd. by X-ray diffraction; | A 1% B 1% |
| Conditions | Yield |
|---|---|
| Product distribution / selectivity; |
| Conditions | Yield |
|---|---|
| at 1000℃; under 810.081 Torr; Gas phase (argon/H2 or argon alone); | |
| With diborane at 1000℃; under 810.081 Torr; Gas phase (H2/argon); | |
| With tri-tert-butyl phosphine at 1000℃; under 810.081 Torr; Gas phase (H2/argon); |
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History
Silicon was first identified by Antoine Lavoisier in 1787 (as a component of the Latin silex, silicis for flint, flints), and was later mistaken by Humphry Davy in 1800 for a compound. In 1811 Gay-Lussac and Thénard probably prepared impure amorphous silicon through the heating of potassium with silicon tetrafluoride. In 1824, Berzelius, generally given creditwhere for discovering the element silicon, prepared amorphous silicon using approximately the same method as Lussac. Berzelius also purified the product by repeatedly washing it.
Consensus Reports
Reported in EPA TSCA Inventory.
Standards and Recommendations
OSHA PEL: TWA Total Dust: 10 mg/m3 of total; Respirable Fraction: 5 mg/m3
ACGIH TLV: TWA (nuisance particulate) 10 mg/m3 of total dust (when toxic impurities are not present, e.g., quartz <1%)
DOT Classification: 4.1; Label: Flammable Solid
Specification
With the CAS registry number 7440-21-3, Silicon is also named as Polyeristalline silicon powder. The product's categories are Inorganics; Silicon Nanomaterials; 14: Si; Nanoparticles: Metals and Metal AlloysMetal and Ceramic Science; Nanopowders and Nanoparticle Dispersions; Pure ElementsMetal and Ceramic Science; Electronic Chemicals; Materials Science. Besides, it is grey lustrous solid or grey powder, which should be stored in a cool, dry, ventilated warehouse away from fire and heat source. It is stable and incompatible with oxidizing agents, bases, carbonates, alkali metals, lead and aluminium oxides, halogens, carbides, formic acid. In addition, its molecular formula is Si and molecular weight is 28.08.
The other characteristics of this product can be summarized as: (1)Exact Mass: 27.976927; (2)MonoIsotopic Mass: 27.976927; (3)EINECS: 231-130-8; (4)Density: 2.33 g/cm3; (5)Melting point: 1410 °C; (6)Boiling point: 2355 °C; (7)Enthalpy of Vaporization: 15.08 kJ/mol; (8)Vapour Pressure: 54300 mmHg at 25 °C.
Preparation of Silicon: this chemical is commercially prepared by the reaction of high-purity silica with wood, charcoal, and coal, in an electric arc furnace using carbon electrodes.This reaction will occur at temperature of 1900 °C. The chemical equations is as follows:
SiO2 + C → Si + CO2
SiO2 + 2 C → Si + 2 CO
The yield is at least 98 % pure.
Uses of Silicon: this chemical is mainly used for the manufacture of aluminium-silicon alloys to produce cast parts in the automotive industry. It is also used in the semiconductor industry, electronics and photovoltaic applications to produce ultra-pure silicon wafers. Similarly, it can be used in waterproofing treatments, molding compounds and mold-release agents, mechanical seals, high temperature greases and waxes, caulking compounds and even in applications as diverse as breast implants, contact lenses, explosives and pyrotechnics.
When you are using this chemical, please be cautious about it as the following: it is highly flammable. Please keep container tightly closed in a well-ventilated place away from sources of ignition. And in case of contact with eyes, rinse immediately with plenty of water and seek medical advice. Moreover, you should wear suitable protective clothing and gloves. And please take precautionary measures against static discharges. Additionally, in case of accident or if you feel unwell, seek medical advice immediately (show the label whenever possible.)
You can still convert the following datas into molecular structure:
(1)SMILES: [SiH4]
(2)InChI: InChI=1/Si
(3)InChIKey: XUIMIQQOPSSXEZ-UHFFFAOYAB
(4)Std. InChI: InChI=1S/Si
(5)Std. InChIKey: XUIMIQQOPSSXEZ-UHFFFAOYSA-N
The toxicity data is as follows:
| Organism | Test Type | Route | Reported Dose (Normalized Dose) | Effect | Source |
|---|---|---|---|---|---|
| rat | LD50 | oral | 3160mg/kg (3160mg/kg) | FAO Nutrition Meetings Report Series. Vol. 53A, Pg. 21, 1974. | |
| rat | LDLo | intraperitoneal | 500mg/kg (500mg/kg) | SENSE ORGANS AND SPECIAL SENSES: OTHER: EYE LUNGS, THORAX, OR RESPIRATION: RESPIRATORY STIMULATION SENSE ORGANS AND SPECIAL SENSES: OTHER CHANGES: OLFACTION | National Technical Information Service. Vol. OTS0536164, |