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| CAS No.: | 7440-55-3 |
|---|---|
| Name: | Gallium |
| Article Data: | 119 |
| Molecular Structure: | |
|
|
|
| Formula: | Ga |
| Molecular Weight: | 69.723 |
| Synonyms: | Galliumelement; |
| EINECS: | 231-163-8 |
| Density: | 5.904 g/mL at 25 °C(lit.) |
| Melting Point: | 29.8 °C(lit.) |
| Boiling Point: | 2403 °C(lit.) |
| Appearance: | light grey solid |
| Hazard Symbols: |
 C,  Xi,  T
|
| Risk Codes: | 36/38-34-23/24/25 |
| Safety: | 26-45-36/37/39-36-28-27 |
| Transport Information: | UN 3264 8/PG 3 |
| PSA: | 0.00000 |
| LogP: | -0.04330 |
- 81281-59-67-Benzylideneaminotheophylline
- 82993-81-5D-threo-Ritalinic acid hydrochloride
- 852475-26-4MC1568
- 958254-66-51H-Imidazo[4,5-b]pyridine-2-carboxaldehyde, 1-methyl-, hydrochloride
- 99170-93-1N-Methyl-2-oxazolamine
- 914458-26-7[5-(2-fluorophenyl)-1-pentyl-1H-pyrrol-3-yl]-1-naphthalenyl-Methanone
- 894852-01-87-BROMO-2,2-DIMETHYL-2H-PYRIDO[3,2-B][1,4]OXAZIN-3(4H)-ONE
- 90221-55-92-bromo-5-methylbenzaldehyde
- 885590-99-82,3-DIFLUORO-4-IODOBENZALDEHYDE
- 97730-31-9(S)-4'-(2-Methylbutyl)Biphenyl-4-Carbonitrile
- 13450-90-3
Gallium trichloride
A
- 7440-55-3
gallium
B
- 856588-85-7, 15024-93-8
gallium trichloride-pyridine (1/1)
| Conditions | Yield |
|---|---|
| In toluene inert atmosphere; soln. of Si-compd. cooled to -80°C, addn. of GaCl3 (equiv. amt.) soln., warming to room temp., Gallium pptn. on standing (3-5 d), filtration of Ga, pptn. on pyridine addn. to filtrate; filtration; | A 98% B 87% |
- 13450-88-9
gallium(III) bromide
A
- 7440-55-3
gallium
| Conditions | Yield |
|---|---|
| In toluene inert atmosphere; soln. of Si-compd. cooled to -80°C, addn. of GaBr3 (equiv. amt.) soln., warming to room temp., gallium pptn. on standing (3-5 d), filtration of Ga, pptn. on pyridine addn. to filtrate; filtration; | A 96% B 79% |
- IMes*GaH3
- 311311-59-8
IMes*GaH3
A
- 7440-55-3
gallium
B
GaHBr2(1,3-bis(2,4,6-trimethylphenyl)imidazol-2-ylidene)- 1159704-40-1
GaHBr2(1,3-bis(2,4,6-trimethylphenyl)imidazol-2-ylidene)
| Conditions | Yield |
|---|---|
| In toluene (under Ar, Schlenk); soln. of Ga-complex added dropwise to soln. of Ga-complex in toluene with stirring at room temp., heated to 50°C for36 h; filtered, volatiles removed in vacuo; | A n/a B 71% |
| Conditions | Yield |
|---|---|
| With ammonium hydroxide In methanol for 3h; pH=8 - 9; Reflux; | A n/a B 66% |
- 7440-55-3
gallium
| Conditions | Yield |
|---|---|
| With 2,3,5,6-tetramethyl-1,4-bis(trimethylsilyl)-1,4-diaza-2,5-cyclo-hexadiene In tetrahydrofuran at 20℃; for 15h; Inert atmosphere; | 59% |
| Conditions | Yield |
|---|---|
| In benzene byproducts: LiCl; addn. of soln. of carborane to GaCl3 (C6H6, 0°C), stirring at room temp. overnight; filtration off of LiCl and Ga, concn.; elem. anal.; | A n/a B 51% |
- 181886-00-0
[LiAs(SiMe3)2*DME]
A
- 7440-55-3
gallium
B
- 124592-82-1
bis(1,4-di-t-butyl-1,4-diazabuta-1,3-diene)gallium
| Conditions | Yield |
|---|---|
| In diethyl ether under Ar atm. to soln. Ga complex in Et2O LiAs(SiMe3)2*DME in Et2O (1:2)was added at -78°C over 5 min, soln. was warmed to room temp. an d stirred overnight; volatiles were emoved in vacuo, residue was extd. with hexane, filtered,concd., and cooled to -30°C overnight; elem. anal.; | A n/a B n/a C 33% |
A
- 7440-55-3
gallium
C
- 13572-93-5
gallane
| Conditions | Yield |
|---|---|
| With octane byproducts: H2; at -30°C in vac. (<1E-4 mm Hg); Gallane condenses as a white solid, elem. anal.; | A n/a B n/a C 5% |
| With octane In solid byproducts: H2; at -30°C in vac. (<1E-4 mm Hg); Gallane condenses as a white solid, elem. anal.; | A n/a B n/a C 5% |
| Conditions | Yield |
|---|---|
| In water byproducts: H(1+); Sonication; Ar atmosphere (1.5 atm); 100 W/cm**2, 20-kHz, room temp., 90 min - 6 h; washing (H2O, 4 times), drying (vac.); detd. by powder X-ray diffraction; | A 1% B n/a |
- 325774-15-0
1,1,3,3-tetramethylgyanidine-gallane (1/1)
A
- 7440-55-3
gallium
B
- 1333-74-0
hydrogen
C
- 80-70-6
N,N,N',N'-tetramethylguanidine
| Conditions | Yield |
|---|---|
| at 85 - 90℃; Thermodynamic data; |
- 120-40-1Dodecanamide,N,N-bis(2-hydroxyethyl)-
- 61789-51-3Naphthenic acids,cobalt salts
- 1304-28-5Barium oxide (BaO)
- 26628-22-8Sodium azide
- 1309-60-0Lead dioxide
- 63231-60-7Hydrocarbonwaxes, microcryst.
- 12070-08-5Titanium carbide (TiC)
- 15356-70-4(+/-)-Menthol
- 104987-11-3Tacrolimus
- 141-53-7Sodium formate
- 8001-54-5Quaternary ammonium compounds, alkylbenzyldimethyl, chlorides
- 9003-39-8Povidone
- 10161-34-9Trenbolone acetate
- 402957-28-2Telaprevir
- 68-19-9Cyanocobalamin
- Total:18 Page 1 of 1 1
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History
Gallium (CAS NO.7440-55-3) was first discovered by Paul Emile Lecoq de Boisbaudran in 1875 by its characteristic spectrum in an examination of a zinc blende from the Pyrenees. Later, in 1875, Lecoq obtained the free metal by electrolysis of its hydroxide in potassium hydroxide solution. He named the element "gallia" after his native land of France.
Consensus Reports
Reported in EPA TSCA Inventory.
Standards and Recommendations
DOT Classification: 8; Label: Corrosive
Specification
The Gallium, with the cas registry number 7440-55-3, is a kind of silvery-white liquid at room temperature. This is stable chemically and sensitive to moisture and is incompatible with strong acids, strong bases, halogens, strong oxidizing agents.
Its product categories are including Inorganics; Gallium; Metal and Ceramic Science; Metals; AA Standard SolutionsAnalytical Standards; GSpectroscopy; AAS; Alphabetic; Matrix Selection; NitrateSpectroscopy; Reference/Calibration Standards; Single Solution; Standard Solutions; Analytical Standards; GApplication CRMs; ICP CRMs; ICP-OES/-MS; ICPSpectroscopy; Spectroscopy.
The physical properties of this chemical are as below: (1)#H bond acceptors: 0; (2)#H bond donors: 0; (3)#Freely Rotating Bonds: 0; (4)Polar Surface Area: 0; (5)Exact Mass: 68.925581; (6)MonoIsotopic Mass: 68.925581; (7)Heavy Atom Count: 1; (8)Covalently-Bonded Unit Count: 1.
The production method of this chemical is below: add the high purity gallium solvent into the reactor and stir and then add oxalic acid to have the reduction reaction; Next filter and then wash with the deionized water, and then you could get the high purity products.
When you are dealing with this chemical, you should be very careful. For one thing, it is irritant which may cause inflammation to the skin or other mucous membranes and it is irritating to eyes and skin. For another thing, it is toxic which may at low levels cause damage to health. It will be toxic if by inhalation, in contact with skin and if swallowed. In addition, it is corrosive which may destroy living tissue on contact and may causes burns.
Due to so many dangers mentioned above, you should take different measures to deal with different cases. Wear suitable protective clothing, gloves and eye/face protection. If in case of contact with eyes, rinse immediately with plenty of water and seek medical advice and if in case of accident or if you feel unwell, seek medical advice immediately (show label). After contact with skin, wash immediately with plenty of ... (to be specified by the manufacturer). Besides, take off immediately all contaminated clothing.
As to its usage, it is widely applied in many fields. It could be used in producing semiconductor [semiconducting] material and high purity alloy; It could be used as a dopant for the production of solid-state devices such as transistors, and as a component in low-melting alloys and solders. In addition, it can be used to fight bacterial infections in people with cystic fibrosis.
In addition, you could obtain the molecular structure by using the following datas:
(1)Canonical SMILES: [Ga]
(2)InChI: InChI=1S/Ga
(3)InChIKey: GYHNNYVSQQEPJS-UHFFFAOYSA-N