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1445-79-0

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1445-79-0 Usage

Chemical Description

Trimethylgallium is an organometallic compound with the chemical formula Ga(CH3)3.

Check Digit Verification of cas no

The CAS Registry Mumber 1445-79-0 includes 7 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 4 digits, 1,4,4 and 5 respectively; the second part has 2 digits, 7 and 9 respectively.
Calculate Digit Verification of CAS Registry Number 1445-79:
(6*1)+(5*4)+(4*4)+(3*5)+(2*7)+(1*9)=80
80 % 10 = 0
So 1445-79-0 is a valid CAS Registry Number.
InChI:InChI=1/3CH3.Ga/h3*1H3;/rC3H9Ga/c1-4(2)3/h1-3H3

1445-79-0SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 19, 2017

Revision Date: Aug 19, 2017

1.Identification

1.1 GHS Product identifier

Product name trimethylgallane

1.2 Other means of identification

Product number -
Other names Gallium, trimethyl-

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:1445-79-0 SDS

1445-79-0Synthetic route

(Me3Ga)3*triphos

(Me3Ga)3*triphos

trimethyl gallium
1445-79-0

trimethyl gallium

Conditions
ConditionsYield
In neat (no solvent) heated slowly under 1E-2 mmHg in a trap-to-trap distillation apparatus (receiver flask at -196 °C), liberation of Me3Ga started at 50 °C, temp. was raised to 120 °C;; distillate contained benzene;;100%
gallium(III) trichloride

gallium(III) trichloride

trimethylaluminum
75-24-1

trimethylaluminum

sodium chloride
7647-14-5

sodium chloride

A

Na(1+)*CH3AlCl3(1-)

Na(1+)*CH3AlCl3(1-)

B

trimethyl gallium
1445-79-0

trimethyl gallium

Conditions
ConditionsYield
at 120 - 145℃; Solvent; Temperature;A n/a
B 98%
gallium
7440-55-3

gallium

methyl aluminium sesquichloride

methyl aluminium sesquichloride

A

trimethylaluminum
75-24-1

trimethylaluminum

B

trimethyl gallium
1445-79-0

trimethyl gallium

Conditions
ConditionsYield
With methylene chloride; sodium at 40 - 50℃; under 375.038 Torr; Inert atmosphere; Flow reactor;A 93.7%
B 96.8%
gallium(III) trichloride

gallium(III) trichloride

trimethylaluminum
75-24-1

trimethylaluminum

trimethyl gallium
1445-79-0

trimethyl gallium

Conditions
ConditionsYield
With tridodecylamine In 5,5-dimethyl-1,3-cyclohexadiene at 100℃; for 1h;93.3%
Stage #1: gallium(III) trichloride With triethylaluminum Heating;
Stage #2: trimethylaluminum at 160℃;
85%
Stage #1: trimethylaluminum With triethylamine In toluene at 25 - 100℃; for 1h;
Stage #2: gallium(III) trichloride In toluene Product distribution / selectivity;
81%
(Me3Ga)4*tetraphos

(Me3Ga)4*tetraphos

trimethyl gallium
1445-79-0

trimethyl gallium

Conditions
ConditionsYield
In neat (no solvent) heated slowly under 1E-2 mmHg in a trap-to-trap distillation apparatus (receiver flask at -196 °C), liberation of Me3Ga started at 65 °C, proceeded rapidly at 120-130 °C;; contained traces of benzene;;93%
gallium
7440-55-3

gallium

methyl iodide
74-88-4

methyl iodide

trimethyl gallium
1445-79-0

trimethyl gallium

Conditions
ConditionsYield
Stage #1: gallium With magnesium at 60℃; for 1h; Inert atmosphere;
Stage #2: methyl iodide In 1,3,5-trimethyl-benzene at 60 - 190℃; for 3.66h;
92%
With magnesium In neat (no solvent) byproducts: MgI2; inert atm.; heating (autoclave, 120-160°C, 12 h); distn.;65%
gallium
7440-55-3

gallium

methyl magnesium iodide
917-64-6

methyl magnesium iodide

iodine
7553-56-2

iodine

methyl iodide
74-88-4

methyl iodide

trimethyl gallium
1445-79-0

trimethyl gallium

Conditions
ConditionsYield
Stage #1: gallium; iodine; methyl iodide In toluene at 40 - 50℃; for 6h; Inert atmosphere; Sonication;
Stage #2: methyl magnesium iodide In toluene at 100 - 110℃; for 5h; Inert atmosphere;
92%
trimethylaluminum
75-24-1

trimethylaluminum

triethyl gallium
1115-99-7

triethyl gallium

trimethyl gallium
1445-79-0

trimethyl gallium

Conditions
ConditionsYield
at 20 - 140℃; Glovebox; Inert atmosphere;92%
(Me3Ga)2*diphos

(Me3Ga)2*diphos

trimethyl gallium
1445-79-0

trimethyl gallium

Conditions
ConditionsYield
In neat (no solvent) heated slowly under 1E-2 mmHg in a trap-to-trap distillation apparatus (receiver flask at -196 °C), liberation of Me3Ga started at 85 °C, the rate was more satisfactory at 110-130 °C;;91%
trimethylaluminum
75-24-1

trimethylaluminum

Gallium trichloride
13450-90-3

Gallium trichloride

trimethyl gallium
1445-79-0

trimethyl gallium

Conditions
ConditionsYield
Reflux;90%
In neat (no solvent) warming the mixt. of GaCl3 and trimethylaluminum from 233 K to room temp., stirring for 90 min; vaporization of volatiles in vac., fractional condensation at 178 K; IR;
Stage #1: trimethylaluminum at 80 - 85℃; under 187.519 Torr; for 0.5h;
Stage #2: Gallium trichloride at 80 - 90℃; for 0.5h;
(CH2)3(P(C6H5)2Ga(CH3)3)2*2C6H6

(CH2)3(P(C6H5)2Ga(CH3)3)2*2C6H6

trimethyl gallium
1445-79-0

trimethyl gallium

Conditions
ConditionsYield
In neat (no solvent) metal complex decomposed at 110-120°C for 2-3 h;90%
(triphenylphosphine)trimethylgallium

(triphenylphosphine)trimethylgallium

trimethyl gallium
1445-79-0

trimethyl gallium

Conditions
ConditionsYield
In neat (no solvent) metal complex decomposed at 100-110°C for 2-3 h;88%
In neat (no solvent) heated slowly under 1E-2 mmHg in a trap-to-trap distillation apparatus (receiver flask at -196 °C), liberation of Me3Ga started at 80 °C, the rate was more satisfactory at 90 °C;;71%
(CH2)5(P(C6H5)2Ga(CH3)3)2*2C6H6

(CH2)5(P(C6H5)2Ga(CH3)3)2*2C6H6

trimethyl gallium
1445-79-0

trimethyl gallium

Conditions
ConditionsYield
In neat (no solvent) metal complex decomposed at 110-120°C for 2-3 h;88%
gallium(III) trichloride

gallium(III) trichloride

dimethylaluminum chloride
1184-58-3

dimethylaluminum chloride

trimethyl gallium
1445-79-0

trimethyl gallium

Conditions
ConditionsYield
Stage #1: gallium(III) trichloride; dimethylaluminum chloride In toluene
Stage #2: With triethylamine In toluene at 100℃; for 1h; Product distribution / selectivity;
82%
gallium(III) trichloride

gallium(III) trichloride

methyllithium
917-54-4

methyllithium

trimethyl gallium
1445-79-0

trimethyl gallium

Conditions
ConditionsYield
In diethyl ether at -10 - -5℃; for 10h; Large scale;80%
gallium(III) trichloride

gallium(III) trichloride

trimethylaluminum
75-24-1

trimethylaluminum

A

dimethylchlorogallane
6917-81-3

dimethylchlorogallane

B

trimethyl gallium
1445-79-0

trimethyl gallium

Conditions
ConditionsYield
With potassium chloride; sodium chloride at 120℃; Inert atmosphere;A 25.6%
B 71.3%
With potassium chloride; sodium chloride at 120℃; Inert atmosphere;A 25.6%
B 69.6%
gallium(III) trichloride

gallium(III) trichloride

methylaluminium sesquichloride

methylaluminium sesquichloride

A

dimethylchlorogallane
6917-81-3

dimethylchlorogallane

B

trimethyl gallium
1445-79-0

trimethyl gallium

Conditions
ConditionsYield
With potassium chloride; sodium chloride at 120 - 155℃; Concentration; Temperature; Inert atmosphere;A 24.7%
B 69.6%
With potassium chloride; sodium chloride at 70 - 180℃; Concentration; Temperature; Inert atmosphere;A 27.4%
B 68%
gallium
7440-55-3

gallium

magnesium
7439-95-4

magnesium

methyl iodide
74-88-4

methyl iodide

A

magnesium chloride
7786-30-3

magnesium chloride

B

trimethyl gallium
1445-79-0

trimethyl gallium

Conditions
ConditionsYield
In neat (no solvent) inert gas atmosphere; mixing, heating in autoclave (100 - 160°C, stirring, 12 h); distillation;A n/a
B 65%
lithium hydride

lithium hydride

dimethylchlorogallane
6917-81-3

dimethylchlorogallane

A

tris(dimethylgallium hydride)

tris(dimethylgallium hydride)

B

trimethyl gallium
1445-79-0

trimethyl gallium

Conditions
ConditionsYield
In diethyl ether; pentane byproducts: LiCl; under Ar, excess of LiH in Et2O suspn. was added to Et2O soln. of Me2GaCl, reflux for 20 h, filtn., evapn. in vac. at room temp., drying at 45 °C (1E-3 Torr), solid was suspended in n-pentane, Me2GaCl was added in n-pentane, reflux for 16 h; soln. was filtered, residue was twice washed with n-pentane, combined filtrate was evapd., oily residue was distd. in vac. at room temp. (1E-3 Torr) with a cooled (-40 °C) collector, Me3Ga was collected at liq. N2 temp.;A 49%
B n/a
1,1'-bis(dimethylgallyl)ferrocene
348089-02-1

1,1'-bis(dimethylgallyl)ferrocene

A

[(Fe(η5-C5H4)2)2(GaMe)2]
561301-67-5

[(Fe(η5-C5H4)2)2(GaMe)2]

B

trimethyl gallium
1445-79-0

trimethyl gallium

Conditions
ConditionsYield
In diethyl ether; toluene under Ar atm. Fe(C5H4GaMe2)2 was treated with Et2O and toluene at room temp. and cooled to +6°C; ppt. was washed with n-hexane and dried in vacuo;A 46%
B n/a
In chloroform under Ar atm. Fe(C5H4GaMe2)2 was dissolved in CHCl3 and cooled to +6°C; elem. anal.;
dimethyl zinc(II)
544-97-8

dimethyl zinc(II)

trimethyl gallium
1445-79-0

trimethyl gallium

Conditions
ConditionsYield
With gallium(III) trichloride at 80 - 120℃;
dimethylmercury
593-74-8

dimethylmercury

trimethyl gallium
1445-79-0

trimethyl gallium

Conditions
ConditionsYield
With gallium at 110 - 130℃;
1,1,1,2-tetramethyl-digallane

1,1,1,2-tetramethyl-digallane

A

trimethyl gallium
1445-79-0

trimethyl gallium

B

gallium

gallium

C

hydrogen

hydrogen

gallium
7440-55-3

gallium

trimethyl gallium
1445-79-0

trimethyl gallium

Conditions
ConditionsYield
With methyl magnesium iodide; methyl iodide In 1,4-dioxane byproducts: MgI2; excess of CH3MgI and CH3I, heated at 101°C;
With methyl magnesium iodide; methyl iodide In tetrahydrofuran byproducts: MgI2; excess of CH3MgI and CH3I, heated at 65°C;
With methyl magnesium iodide; methyl iodide In di-isopropyl ether byproducts: MgI2; excess of CH3MgI and CH3I, heated at 69°C;
gallium
7440-55-3

gallium

dimethylmercury
593-74-8

dimethylmercury

trimethyl gallium
1445-79-0

trimethyl gallium

Conditions
ConditionsYield
according to A. Storr, B. S. Thomas, Can. J. Chem. 48 (1970) 3667;
dimethyl zinc(II)
544-97-8

dimethyl zinc(II)

Gallium trichloride
13450-90-3

Gallium trichloride

trimethyl gallium
1445-79-0

trimethyl gallium

Conditions
ConditionsYield
In neat (no solvent) vigorously starting reaction, completed at 80 - 120 °C;;
dimethylzinc

dimethylzinc

Gallium trichloride
13450-90-3

Gallium trichloride

trimethyl gallium
1445-79-0

trimethyl gallium

Conditions
ConditionsYield
In not given reaction of excess GaCl3 with Zn(CH3)2;;
Mg5Ga2

Mg5Ga2

trimethyl gallium
1445-79-0

trimethyl gallium

Conditions
ConditionsYield
With methyl iodide In further solvent(s) under N2, MeI added slowly to stirred suspn. of Mg5Ga2 in di-isopentyl ether, react. initiated with I2, stirred for 18 h, refluxed for 24 h, cooled to ambient temp.; distn. at bath temp. of 190°C;30-50
gallium(III) chloride

gallium(III) chloride

trimethyl gallium
1445-79-0

trimethyl gallium

Conditions
ConditionsYield
With methylmagnesium bromide GaCl3 is treated with a three-fold excess of MeMgBr; elem. anal.;
tert-butylamine
75-64-9

tert-butylamine

trimethyl gallium
1445-79-0

trimethyl gallium

trimethylgallium-tert-butyl amine

trimethylgallium-tert-butyl amine

Conditions
ConditionsYield
In not given inert atm., PhMe or hexane as solvent, equimolar ratio;100%
In toluene (under dry nitrogen); t-butyl amine added to stirred soln. of trimethylgallium at -78°C; warmed to 25°C; stirred for 24 h; evapd. (vac.); sublimed (65-67°C; E-3 Torr);
trimethyl gallium
1445-79-0

trimethyl gallium

dimethyl(methylperoxy)gallium
66622-03-5

dimethyl(methylperoxy)gallium

Conditions
ConditionsYield
With oxygen In n-heptane100%
With oxygen In not given according to: Yu. A. Aleksandrov, G. I. Makin et al., Zh. Obshch. Khim.48 (1978) 467; oxidn. of Ge-compd. with molecular oxygen in hydrocarbonmedium at -78°C;100%
With O2 In neat (no solvent) heated from -120°C -70°C;
3-Methylpyrazole
1453-58-3

3-Methylpyrazole

trimethyl gallium
1445-79-0

trimethyl gallium

dimethyl-(3-methyl-pyrazol-1-yl)-gallium
79422-26-7

dimethyl-(3-methyl-pyrazol-1-yl)-gallium

Conditions
ConditionsYield
In benzene byproducts: CH4; under argon atm., reflux, 1 h; evapn. of solvent;100%
tris(trimethylsilyl)antimony
7029-27-8

tris(trimethylsilyl)antimony

trimethyl gallium
1445-79-0

trimethyl gallium

(CH3)3GaSb(Si(CH3)3)3

(CH3)3GaSb(Si(CH3)3)3

Conditions
ConditionsYield
In not given N2-atmosphere; equimolar amts.; can be recrystallized (pentane, low temp.) or sublimated (55°C, 1E-2 mbar);100%
tris(trimethylsilyl)bismuthane
81183-20-2

tris(trimethylsilyl)bismuthane

trimethyl gallium
1445-79-0

trimethyl gallium

(CH3)3GaBi(Si(CH3)3)3

(CH3)3GaBi(Si(CH3)3)3

Conditions
ConditionsYield
In neat (no solvent) all manipulations under N2 atm.; mixed equimolar amts. of Ga and Bi compds. at ambient temp.; elem. anal.;100%
triisopropylbismuthine
85824-61-9

triisopropylbismuthine

trimethyl gallium
1445-79-0

trimethyl gallium

((CH3)2CH)3BiGa(CH3)3

((CH3)2CH)3BiGa(CH3)3

Conditions
ConditionsYield
In neat (no solvent) all manipulations under N2 atm.; mixed equimolar amts. of Ga and Bi compds. at ambient temp.; elem. anal.;100%
tetraethyldistibine
4669-92-5

tetraethyldistibine

trimethyl gallium
1445-79-0

trimethyl gallium

[Et4Sb2][GaMe3]2

[Et4Sb2][GaMe3]2

Conditions
ConditionsYield
In neat (no solvent) under N2 atm. react. Me3Ga and Et4Sb2; elem. anal.;100%
N,N',N'-Trimethyl-hexamethylcyclotristannazan
1080-40-6

N,N',N'-Trimethyl-hexamethylcyclotristannazan

trimethyl gallium
1445-79-0

trimethyl gallium

[(CH3)2GaN(Sn(CH3)3)(CH3)]2

[(CH3)2GaN(Sn(CH3)3)(CH3)]2

Conditions
ConditionsYield
In toluene molar ratio 3:1;100%
In benzene dry Ar atm.; 3 equiv. of AlMe3, cooling (-15°C), heating (room temp., stirring), refluxing (1,5 h, 70-80°C); concn., standing (5 to -5 degree.C, several days), washing (toluene), drying (vac.); elem. anal.;64%
tris(diethylamino)difluorophosphorane
32318-29-9

tris(diethylamino)difluorophosphorane

trimethyl gallium
1445-79-0

trimethyl gallium

[FP(N(C2H5)2)3](1+)*[(CH3)3GaF](1-)=[FP(N(C2H5)2)3][(CH3)3GaF]
222190-85-4

[FP(N(C2H5)2)3](1+)*[(CH3)3GaF](1-)=[FP(N(C2H5)2)3][(CH3)3GaF]

Conditions
ConditionsYield
In tetrahydrofuran Ar atm.; equimolar amts., stirring (20°C, 24 h); evapn. (vac.); elem. anal.;100%
N.N'.N''-Triethyl-hexamethyl-hexahydro-symm.-triazatristannin
1778-12-7

N.N'.N''-Triethyl-hexamethyl-hexahydro-symm.-triazatristannin

trimethyl gallium
1445-79-0

trimethyl gallium

[(CH3)2GaN(Sn(CH3)3)(CH2CH3)]2

[(CH3)2GaN(Sn(CH3)3)(CH2CH3)]2

Conditions
ConditionsYield
In toluene molar ratio 3:1;100%
[(CH3)2SnN(CH(CH3)2)]3
234443-32-4

[(CH3)2SnN(CH(CH3)2)]3

trimethyl gallium
1445-79-0

trimethyl gallium

[(CH3)2GaN(Sn(CH3)3)(CH(CH3)2)]2

[(CH3)2GaN(Sn(CH3)3)(CH(CH3)2)]2

Conditions
ConditionsYield
In toluene molar ratio 3:1;100%
In benzene dry Ar atm.; 3 equiv. of AlMe3, cooling (-15°C), heating (room temp., stirring), refluxing (1,5 h, 70-80°C); concn., standing (5 to -5 degree.C, several days), washing (toluene), drying (vac.); elem. anal.;73%
[(CH3)2SnN(CH2CH2CH3)]3
234443-31-3

[(CH3)2SnN(CH2CH2CH3)]3

trimethyl gallium
1445-79-0

trimethyl gallium

[(CH3)2GaN(Sn(CH3)3)(CH2CH2CH3)]2

[(CH3)2GaN(Sn(CH3)3)(CH2CH2CH3)]2

Conditions
ConditionsYield
In toluene molar ratio 3:1;100%
In benzene dry Ar atm.; 3 equiv. of AlMe3, cooling (-15°C), heating (room temp., stirring), refluxing (1,5 h, 70-80°C); concn., standing (5 to -5 degree.C, several days), washing (toluene), drying (vac.); elem. anal.;67%
[(CH3)2SnN(CH2CH(CH3)2)]3
234443-33-5

[(CH3)2SnN(CH2CH(CH3)2)]3

trimethyl gallium
1445-79-0

trimethyl gallium

[(CH3)2GaN(Sn(CH3)3)(CH2CH(CH3)2)]2

[(CH3)2GaN(Sn(CH3)3)(CH2CH(CH3)2)]2

Conditions
ConditionsYield
In toluene molar ratio 3:1;100%
In benzene dry Ar atm.; 3 equiv. of AlMe3, cooling (-15°C), heating (room temp., stirring), refluxing (1,5 h, 70-80°C); concn., standing (5 to -5 degree.C, several days), washing (toluene), drying (vac.); elem. anal.;76%
[(CH3)2SnNCH(CH3)(CH2CH3)]3

[(CH3)2SnNCH(CH3)(CH2CH3)]3

trimethyl gallium
1445-79-0

trimethyl gallium

[(CH3)2GaN(Sn(CH3)3)((CH3)CH(CH2CH3))]2

[(CH3)2GaN(Sn(CH3)3)((CH3)CH(CH2CH3))]2

Conditions
ConditionsYield
In toluene molar ratio 3:1;100%
isopropylamine
75-31-0

isopropylamine

trimethyl gallium
1445-79-0

trimethyl gallium

[(CH3)3GaNH2(CH(CH3)2)]

[(CH3)3GaNH2(CH(CH3)2)]

Conditions
ConditionsYield
In not given inert atm., PhMe or hexane as solvent, equimolar ratio;100%
(2,6-iPr2C6H3)N(SiMe3)Si(OH)3
163631-37-6

(2,6-iPr2C6H3)N(SiMe3)Si(OH)3

trimethyl gallium
1445-79-0

trimethyl gallium

[(2,6-Me2C6H3)N(SiMe3)SiO(OGaMe2)(OGaMe)]2

[(2,6-Me2C6H3)N(SiMe3)SiO(OGaMe2)(OGaMe)]2

Conditions
ConditionsYield
In 1,4-dioxane; hexane byproducts: CH4; molar ratio Ga:ligand 2:1, ratio n-hexane/1,4-dioxane 10/1, addn. (room temp.), refluxing (1 h), pptn.; crystn. (12 h), concn.; elem. anal.;100%
(2,6-iPr2C6H3)N(SiMe3)Si(OH)3
163631-37-6

(2,6-iPr2C6H3)N(SiMe3)Si(OH)3

trimethyl gallium
1445-79-0

trimethyl gallium

[Ga4(OC4H8O)4(O3SiC6H3((CH3)2CH)2N(Si(CH3)3))4]

[Ga4(OC4H8O)4(O3SiC6H3((CH3)2CH)2N(Si(CH3)3))4]

Conditions
ConditionsYield
In 1,4-dioxane; hexane byproducts: CH4; equimolar ratio, ratio n-hexane/1,4-dioxane 10/1, stirring (10 min, roomtemp.), refluxing (1 h); evapn. (vac.); elem. anal.;100%
(2,4,6-Me3C6H2)N(SiMe3)(Si(OH)3)

(2,4,6-Me3C6H2)N(SiMe3)(Si(OH)3)

trimethyl gallium
1445-79-0

trimethyl gallium

[(2,4,6-Me3C6H2)N(SiMe3)SiO(OGaMe2)(OGaMe)]2

[(2,4,6-Me3C6H2)N(SiMe3)SiO(OGaMe2)(OGaMe)]2

Conditions
ConditionsYield
In 1,4-dioxane; hexane byproducts: CH4; molar ratio Ga:ligand 2:1, ratio n-hexane/1,4-dioxane 10/1, addn. (room temp.), refluxing (1 h), pptn.; crystn. (12 h), concn.; elem. anal.;100%
(2,4,6-Me3C6H2)N(SiMe3)(Si(OH)3)

(2,4,6-Me3C6H2)N(SiMe3)(Si(OH)3)

trimethyl gallium
1445-79-0

trimethyl gallium

[(2,4,6-Me3C6H2)N(SiMe3)SiO3Ga*dioxane]4

[(2,4,6-Me3C6H2)N(SiMe3)SiO3Ga*dioxane]4

Conditions
ConditionsYield
In 1,4-dioxane; hexane byproducts: CH4; equimolar ratio, ratio n-hexane/1,4-dioxane 10/1, stirring (10 min, roomtemp.), refluxing (1 h); evapn. (vac.); elem. anal.;100%
NH-pyrazole
288-13-1

NH-pyrazole

trimethyl gallium
1445-79-0

trimethyl gallium

1-dimethylgallylpyrazole
79422-25-6

1-dimethylgallylpyrazole

Conditions
ConditionsYield
In benzene byproducts: CH4; under argon atm., reflux, 1 h; evapn. of solvent;100%
N,N'-di-tert-butyloxamide
37486-48-9

N,N'-di-tert-butyloxamide

trimethyl gallium
1445-79-0

trimethyl gallium

(N,N-di-tert-butyloxamidate)Ga2Me4

(N,N-di-tert-butyloxamidate)Ga2Me4

Conditions
ConditionsYield
In dichloromethane (inert atm.), Me3Ga injected to a stirred suspn. of ligand in CH2Cl2 at -76°C, slowly warmed to room temp.; evapd.(vac.), elem. anal.;100%
N,N'-di-tert-butyloxamide
37486-48-9

N,N'-di-tert-butyloxamide

trimethyl gallium
1445-79-0

trimethyl gallium

(N,N-di-tert-butyloxamidate)Ga2Me4
1309357-34-3, 1309357-37-6

(N,N-di-tert-butyloxamidate)Ga2Me4

Conditions
ConditionsYield
In tetrahydrofuran (inert atm.), Me3Ga injected to a stirred suspn. of ligand in THF at room temp., refluxed for 1 h; evapd.(vac.), elem. anal.;100%
C19H23N2O(1+)*Cl(1-)
1510833-98-3

C19H23N2O(1+)*Cl(1-)

trimethyl gallium
1445-79-0

trimethyl gallium

C21H28GaN2O(1+)*Cl(1-)
1510834-04-4

C21H28GaN2O(1+)*Cl(1-)

Conditions
ConditionsYield
In dichloromethane at -50℃; for 1h; Inert atmosphere; Schlenk technique;100%
C22H29N2O(1+)*Cl(1-)
1510833-99-4

C22H29N2O(1+)*Cl(1-)

trimethyl gallium
1445-79-0

trimethyl gallium

C24H34GaN2O(1+)*Cl(1-)

C24H34GaN2O(1+)*Cl(1-)

Conditions
ConditionsYield
In dichloromethane at -70 - 20℃; for 1h; Inert atmosphere; Schlenk technique;100%
1-(2,6-diisopropylphenyl)-3-(2-hydroxyphenyl)-4,5-dihydro-imidazolyl chloride
724794-67-6

1-(2,6-diisopropylphenyl)-3-(2-hydroxyphenyl)-4,5-dihydro-imidazolyl chloride

trimethyl gallium
1445-79-0

trimethyl gallium

C23H32GaN2O(1+)*Cl(1-)

C23H32GaN2O(1+)*Cl(1-)

Conditions
ConditionsYield
In dichloromethane at -70 - 20℃; for 1h; Inert atmosphere; Schlenk technique;100%
C24H33GaN2O

C24H33GaN2O

trimethyl gallium
1445-79-0

trimethyl gallium

C27H42Ga2N2O

C27H42Ga2N2O

Conditions
ConditionsYield
In toluene at 20℃; for 0.166667h; Inert atmosphere; Schlenk technique;100%
all-cis-1,3,5-triethynyl-1,3,5-trimethyl-1,3,5-trisilacyclohexane

all-cis-1,3,5-triethynyl-1,3,5-trimethyl-1,3,5-trisilacyclohexane

trimethyl gallium
1445-79-0

trimethyl gallium

1,3,5-tris(dimethylgallanylethynyl)-1,3,5-trimethyl-1,3,5-trisilacyclohexane

1,3,5-tris(dimethylgallanylethynyl)-1,3,5-trimethyl-1,3,5-trisilacyclohexane

Conditions
ConditionsYield
In neat (no solvent) at 42℃; for 24h; Temperature; Schlenk technique; Inert atmosphere;100%
tris[(ethynyl)dimethylsilyl](trimethylsilyl)methane

tris[(ethynyl)dimethylsilyl](trimethylsilyl)methane

trimethyl gallium
1445-79-0

trimethyl gallium

tris[(dimethylgallanylethynyl)dimethylsilyl](trimethylsilyl)methane

tris[(dimethylgallanylethynyl)dimethylsilyl](trimethylsilyl)methane

Conditions
ConditionsYield
In neat (no solvent) at 20℃; for 72h;100%
C27H39ClN2O

C27H39ClN2O

trimethyl gallium
1445-79-0

trimethyl gallium

C29H44ClGaN2O

C29H44ClGaN2O

Conditions
ConditionsYield
In dichloromethane at -50 - 20℃; Inert atmosphere; Schlenk technique;100%

1445-79-0Relevant academic research and scientific papers

The Synthesis and Properties of Dimethylgallane: Structure of the Dimer Me2Ga(μ-H)2GaMe2 in the Gas Phase as determined by Electron Diffraction

Baxter, Paul L.,Downs, Anthony J.,Goode, Michael J.,Rankin, David W. H.,Robertson, Heather E.

, p. 805 - 806 (1986)

Dimethylgallane, best synthesised by the reaction between trimethylgallane and sodium tetrahydrogallate, has been characterised by its spectroscopic and chemical properties; electron diffraction has established the structure of the dimer Me2Ga(μ-H)2GaMe2,

"Metastable" Lu(GaMe4)3 reacts like masked [LuMe3]: Synthesis of an unsolvated lanthanide dimethyl complex

Zimmermann, Melanie,Litlabo, Rannveig,Toernroos, Karl W.,Anwander, Reiner

, p. 6646 - 6649 (2009)

Homoleptic tetramethylgallate Lu(GaMe4)3 reacts selectively with superbulky (TptBu,Me)H according to a methane elimination reaction, affording the quantitative formation of monomeric base-free low-coordinate (Tp

Coordination complexes derived from 3,6-di(2-pyridyl)-1,4-dihydro-1,2,4,5-tetrazine (DPDHT). Synthesis and molecular structure of [(DPT)(GaMe2)2]

Preston, Peter N.,Rettig, Steven J.,Storr, Alan,Trotter, James

, p. 1800 - 1804 (1998)

The facile reaction of 3,6-di(2-pyridyl)-1,4-dihydro-1,2,4,5-tetrazine (DPDHT) (1) with trimethylgallium has resulted in the formation of the purple crystalline product, [(DPT)(GaMe2)2] (2), via methane elimination. Crystals of [(DPT)(GaMe2)2] are orthorhombic, Pbca, a = 15.380(2), b = 21.642(4), c = 11.355(2) A, Z = 8. The structure was solved by heavy-atom Patterson methods and refined by full-matrix least-squares procedures to R = 0.035 for 1570 reflections with I ≥ 3σ(I) (Rw = 0.063 for all 4342 reflections). The [(DPT)(GaMe2)2] molecule is roughly planar (apart from the four methyl groups), in contrast to the folded structure of the DPDHT molecule; molecular dimensions are normal.

Aryl-NHC-group 13 trimethyl complexes: structural, stability and bonding insights

Wu, Melissa M.,Gill, Arran M.,Yunpeng, Lu,Yongxin, Li,Ganguly, Rakesh,Falivene, Laura,García, Felipe

, p. 854 - 864 (2017)

Treatment of aromatic N-substituted N-heterocyclic carbenes (NHCs) with trimethyl-gallium and -indium yielded the new Lewis acid-base adducts, IMes·GaMe3 (1), SIMes·GaMe3 (2), IPr·GaMe3 (3), SIPr·GaMe3 (4), IMes·InMe3 (5), SIMes·InMe3 (6), IPr·InMe3 (7), and SIPr·InMe3 (8), with all complexes being identified by X-ray diffraction, IR, and multinuclear NMR analyses. Complex stability was found to be largely dependent on the nature of the constituent NHC ligands. Percent buried volume (%VBur) and topographic steric map analyses were employed to quantify and elucidate the observed trends. Additionally, a detailed bond snapping energy (BSE) decomposition analysis focusing on both steric and orbital interactions of the M-NHC bond (M = Al, Ga and In) has been performed.

Reactivity of carbonyl-functionalized phosphaalkenes RC(O)P=C(NMe2)2 (R = tBu, ph) towards electrophiles

Weber, Lothar,Uthmann, Stefan,Stammler, Hans-Georg,Neumann, Beate,Schoeller, Wolfgang W.,Boese, Roland,Bl?ser, Dieter

, p. 2369 - 2381 (1999)

The reaction of the carbonyl-functionalized phosphaalkenes RC(O)P=C(NMe2)2 [R = tBu (2a), Ph (2b)] with protic acids and alkylating reagents occurred at the two-coordinate phosphorus atom to give the phosphanyl-substituted carbocations 3a,b and 4a,b. In contrast, treatment with Me3SiOSO2CF3 resulted in attack at the oxygen atom by the silyl group, and the formation of [RC(OSiMe3)= PC(NMe2)2]SO3CF3 (5a,b). Similarly, the Lewis acids B(C6F5)3, Al(tBu)2Cl and AlMe3 were ligated to the oxygen atom of the carbonyl group. Two equivalents of GaMe3 were added to the oxygen and phosphorus atom of the phosphaalkene to yield the thermolabile complexes [RC(OGaMe3)=P(GaMe3)C(NMe2)2] (10a,b). In contrast, one molecule of InMe3 was bound to the phosphorus center of the phosphorus compound. Reaction of the phosphaalkenes with [Ni(CO)4], [Fe2(CO)9] or [{(Z)-cyclooctene}Cr(CO)5] also took place at the pnictogen atom, resulting in complexes of the type [RC(O)P{M(CO)(n)}C(NMe2)2] (R = tBu, Ph; M = Ni, n = 3; Fe, n = 4; Cr, n = 5). The chemical transformations reported here underline the versatile chemistry of phosphaalkenes and emphasize a relationship between carbonyl- functionalized phosphaalkenes and the well-investigated class of phosphorus ylides. X-ray structures of compounds 6b, 7b*, 10a, 11a and 12a are reported.

A new synthetic route to trimethylgallium

Revin,Artemov,Sazonova

, p. 1359 - 1363 (2013)

A new synthetic route to trimethylgallium was developed. It is based on preparation of gallium methyl derivatives by the Green reaction, followed by their alkylation with methyl Grignard reagent. The suggested procedure is well reproducible, with the yield of pure trimethylgallium exceeding 90%.

Polymorphism in the crystal structures of the group 13 trimethyls

Boese, Roland,Downs, Anthony J.,Greene, Timothy M.,Hall, Alexander W.,Morrison, Carole A.,Parsons, Simon

, p. 2450 - 2457 (2003)

Crystal structure have been determined for trimethylboron, BMe3, and for a new polymorph of trimethylgallium, GaMe3; in addition, the crystal structure of trimethylthallium, TlMe3, has been redetermined. The BMe3 crystal structure represents a new structural type for the group 13 trimethyl derivatives in the solid state. In contrast to its heavier analogues, it consists of layer containing only very weakly interacting BMe3 molecules. GaMe3 forms a ladder-like pseudo-polymer via long gallium-to-methyl intermolecular interactions with Ga...C distances in the range 3.096(3)-3.226(4) A. This is compared with a recently reported crystal structure of a polymorph, which, like InMe3 and TlMe3, is characterized by the formation of pseudo-tetramers. The effects of crystallization and secondary interactions have been analyzed by comparison with related crystallographic, gas-phase electron diffraction, and spectroscopic studies of these and other trimethyl derivatives of the group 13 elements. The energetic differences between polymorphs of BMe3, GaMe3, and InMe3 have been explored by plane wave DFT calculations. The energy differences between the BMe3-like layered structure and the InMe3-like pseudo-tetrameric structure are calculated to be -1.7, +3.6, and +10.4 kJ mol-1 for BMe3, GaMe3, and InMe3, respectively.

71Ga NMR studies of mixtures of gallium trichloride and trimethylgallium

Cerny, Z.,Machacek, J.,Fusek, J.,Kriz, O.,Casensky, B.,Tuck, Dennis G.

, p. 25 - 30 (1993)

71Ga NMR spectra of solutions of GaCl3 and Me3Ga, and of binary mixtures of GaCl3-Me3Ga, in n-heptane have been recorded.The resonance signals for both Me3Ga and GaCl3 are unchanged on dilution over the temperature range 20-100 deg C.Mixtures of GaCl3 and Me3Ga show only one resonance signal, whose chemical shift is determined predominantly by the nature of the coordination at gallium, indicating rapid chemical exchange of the species involved.The results of studies of methanolysis and hydrolysis, and of adduct formation, are also discussed.The 71Ga resonances of several possible external standards in the temperature range 20-100 deg C are also reported.The 71Ga NMR signal of a solution of GaCl4- in 6 M aqueous hydrochloric acid, for which δ(71Ga) = 250 +/- 0.5 ppm downfield from the signal of a 1 M solution of 3+3- in 1 M HClO4, is recommended as a temperature-independent external standard for gallium NMR studies.

Process for preparing alkyl metal compounds

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Paragraph 0122-0125, (2020/05/30)

The invention relates to a method for producing alkyl metal compounds, starting materials for the production of trialkyl gallium and trialkyl indium comprise metallic indium or metallic gallium, at least one alkyl donor, a reducing agent and a solvent; the alkyl donor is alkyl halide; R in MR 2-4 represents alkyl group, 2 to 4 R groups are independently selected from the same or different alkyl groups; M is especially aluminum, gallium or indium; high purity gallium or indium or aluminum is used; sesquialkyl aluminum chloride is used as a reaction promoter, and the metal gallium or metal indium is reacted with alkyl chloride of the alkyl donor at low temperature and low pressure to generate sesquialkyl gallium chloride or sesquialkyl indium chloride; when the sesquialkyl gallium chloride or indium sesquialkyl chloride is reduced to the trialkyl gallium or trialkyl indium by a reducing agent, metal gallium or metal indium is necessarily generated simultaneously; the newly generated metal gallium or metal indium reacts with chloromethane (ethyl) in situ, so that the starting materials are fully utilized. The yield of the two steps is almost complete. The new synthetic route is an environment-friendly green process.

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