4525-44-4Relevant articles and documents
Method for removing methyldichlorosilane and silicon tetrachloride impurities in trimethyl chlorosilane
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Paragraph 0079-0082; 0090, (2021/08/25)
The invention relates to a method for removing methyldichlorosilane and silicon tetrachloride impurities in trimethyl chlorosilane, which comprises a hydrosilylation reaction, a partial esterification reaction and a complete esterification reaction. Firstly, a mixture of trimethylsilyl chloride containing methyldichlorosilane and silicon tetrachloride impurities is added to a reactor for hydrosilylation reaction, and the reaction product enters a separation system. The silicon tetrachloride in the mixture is partially esterified and reacted by adding the low-carbon alcohol as an esterifying agent, and the reaction product enters a separation system. Finally, the partially esterified product is further fully esterified to valuable tetraalkoxy silicon products. The high-efficiency recycling of trimethylchlorosilane is realized, and high-value utilization is also realized.
Reaction of chloro(ethyl)silanes with chloro(phenyl)silanes in the presence of aluminum chloride. Synthesis of chloro(ethyl)(phenyl)silanes
Lakhtin,Eremeeva,Gordeev,Ushakov,Bykovchenko,Kirilin,Chernyshev
, p. 595 - 599 (2015/05/13)
Abstract Substituent exchange at the silicon atom between chloro(phenyl)silanes (PhSiCl3, MePhSiCl2, Ph2SiCl2) and chloro(ethyl)silanes (EtSiCl3, Et2SiCl2, Et3SiCl, Et4Si) in the presence of aluminum chloride has been studied. The examined compounds, except for PhSiCl3 and Et4Si, react fairly readily to give chloro(ethyl)-(phenyl)silanes in up to 48-52% yield. A probable mechanism has been proposed.
Quantitative substituent effects in the Grignard reaction with silanes
Golubev, Oleg,Panov, Dmitri,Ploom, Anu,Tuulmets, Ants,Nguyen, Binh T.
, p. 3700 - 3705 (2008/02/08)
Kinetics of reactions of ethyl- and phenylmagnesium chlorides with chlorosilanes, RMeSiCl2, were investigated in diethyl ether under pseudo-first order conditions with a great excess of the Grignard reagent. Rate constants for alkyl substituted silanes correlate well with Es(Si) steric parameters. A good linear correlation of rate data for substituted phenyl derivates with σ0 inductive constants together with correlations of the literature data rule out the resonance effect of substituents at least in nucleophilic displacement reactions at the silicon center. An attempt to calculate the steric constants for polar substituents was made. It appeared that the inductive constants σ* derived from the carbon chemistry are not applicable to the silicon chemistry. New scales of parameters for description of polar and steric effects in the organosilicon chemistry need to be created.