Metalorganic chemical vapour deposition of MANGANESE ARSENIDE (cas 12005-95-7) for thin film magnetic applications

Add time:07/20/2019    Source:sciencedirect.com

Thin films of the ferromagnetic material MANGANESE ARSENIDE (cas 12005-95-7) (MnAs) have been grown for the first time by atmospheric pressure metalorganic chemical vapour deposition (MOCVD), using tricarbonylmethylcyclopentadienyl manganese (TCM) and arsine. A detailed study of the MnAs growth characteristics are presented together with the resulting magnetic and structural properties.

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