Silicon nitride film growth by remote plasma CVD using Tris(dimethylamino)silane
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Add time:07/26/2019 Source:sciencedirect.com
Silicon nitride (SiNx) films were prepared using an organosilicon monomer, Trisdimethyl-aminosilane ((Me2N)3SiH: TDMAS) by a remote plasma CVD. Plasma was generated by a mixture of hydrogen and nitrogen gases while the monomer was introduced into the downstream. Deposition of SiNx films were initiated by hydrogen radicals since no film deposition was observed in the absence of hydrogen radicals. The deposited films were contaminated with a small amount of carbon atoms for the substrate temperature over 400°C. It is proposed that at the initial step, Si–N or N–C bonds of the monomer are broken by hydrogen radicals. Furthermore, N atoms in the films are assumed to be originated from the plasma.
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