70384-51-9Relevant articles and documents
Novel method for preparing tris (3,6 -dioxo-heptyl) amine
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Paragraph 0037; 0055-0059; 0063-0067; 0071-0074, (2021/04/14)
The invention relates to a new method for preparing tris(3,6-dioxaheptyl)amine. The new method is characterized in that ammonia water, diethylene glycol monomethyl ether and thionyl chloride are takenas raw materials, and the tris(3,6-dioxaheptyl)amine is synthesized through three steps. The new method provided by the invention has the following advantages that reaction conditions are mild, the operation is safe, and the danger of using high-risk chemicals such as hydrogen and Raney nickel is avoided; the reaction conversion rate is high, and the product yield is high; only products, sodium chloride and a very small amount of pre-distillation fractions are produced in the process, excess materials can be recycled after treatment, three wastes are very few, and the production process is green and environmentally friendly.
Synthesis method of tri(3, 6-dioxyheteroheptyl)amine
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Paragraph 0030-0033; 0038; 0039; 0040; 0044-0046, (2019/02/27)
The invention discloses a synthesis method of tri(3, 6- dioxyheteroheptyl)amine and belongs to the technical field of organic synthesis. The method includes: exchanging triethanolamine and triborate to form ester, and reacting with 2-haloethyl methyl ether in a condition with alkali and a phase transfer catalyst to obtain tri(3, 6-dioxyheteroheptyl)amine. The method can be completed in a same reaction kettle, so that high efficiency of reaction operation is realized, a product obtained by reaction is high in purity and easy to purify, and reference is provided for industrial amplification.
Photocurable resin composition, dry film thereof, pattern forming method, and electrical/electronic part protective film
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, (2012/05/04)
A photocurable composition includes: (A) an epoxy group-containing polymer compound having repeating units represented by the following formula (1), where R1 to R4 are each a hydrocarbon group, m is an integer of 1 to 100, a, b, c and d are each 0 or a positive number, such that 0 (c+d)/(a+b+c+d) ≤ 1.0, and X and Y are each the formula (2) or (3), provided that at least one group of the formula (3) is present, (B) a photoacid generator represented by the formula (8) and (C) a solvent.
Resist composition and patterning process
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, (2010/02/17)
The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.
POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS
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, (2010/04/23)
A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising recurring units containing a non-leaving hydroxyl group represented by formula (1) wherein R1 is H, methyl or trifluoromethyl, X is a single bond or methylene, m is 1 or 2, and the hydroxyl group attaches to a secondary carbon atom. The composition is improved in resolution when processed by lithography.
Photo acid generator, chemical amplification resist material and pattern formation method
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, (2008/06/13)
A high resolution resist material comprising an acid generator is provided so that high sensitivity and high resolution for high energy rays of 300 nm or less, small line-edge roughness, and excellence in heat stability and storage stability are obtained. Moreover, a pattern formation method using this resist material are provided. Specifically, a novel compound of the following general formula (1); and a positive resist material comprising this compound preferably as a photo acid generator, and a base resin; are provided. This positive resist material may contain a basic compound or a dissolution inhibitor. Further, the present invention provides a pattern formation method comprising the steps of applying this positive resist material on a substrate, then heat-treating the material, exposing the treated material to a high energy ray having a wavelength of 300 nm or less via a photo mask, optionally heat-treating the exposed material, and developing the material using a developer.
Novel tertiary (meth)acrylates having lactone structure, polymers, resist compositions and patterning process
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, (2008/06/13)
Novel tertiary (meth)acrylate compounds having a lactone structure are polymerizable into polymers having improved transparency, especially at the exposure wavelength of an excimer laser and dry etching resistance. Resist compositions comprising the polymers are sensitive to high-energy radiation, have a high resolution, and lend themselves to micropatterning with electron beams or deep-UV rays.
Method for preparing tris(ether-amine)
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, (2008/06/13)
The invention concerns a method for preparing tris(ether-amines) of formula (I): N[A—O—(B—O)n—R]3wherein R, A, B and n are as defined in Claim 1, comprising the reaction, in liquid phase, of an alkylene-glycol monoether of formula (II): HO—A—O—(B—O)nR wherein R, A, B and n are as defined in Claim 1, with an ammonolysis agent selected among ammonia and an etheramine of formula (I′): H3-pN[A—O—(B—O)nR]pwherein: A, B, n and R are as defined in Claim 1 and p represent 1 or 2, at a temperature ranging between 100 and 250° C., by contacting reagents with a hydrogenation-dehydrogenation catalyst.
Process for the disproportionation of silanes
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, (2008/06/13)
Silane, SiH4, and diochlorosilane, particularly suitable for the preparation of silicon are readily obtained by disproportionating trichlorosilane to dichlorosilane and, ultimately silane by reacting: (a) a silane containing at least one Si-H bond, of the general formula Rn Hm SiX4-(n+m) wherein R represents an alkyl or aryl group, x represents a halogen or an alkoxy group, n is an integer equal to 0, 1, 2 or 3 and m is an integer equal to 1, 2 or 3, and (b) a catalyst system comprising an ionic inorganic salt of the formula M+ A- and a compound capable of at least partially dissociating the salt by complexing its cation M+.
Tris(polyoxaalkyl)amines (Trident), a New Class of Solid-Liquid Phase-Transfer Catalysts
Soula, Gerard
, p. 3717 - 3721 (2007/10/02)
A new class of solid-liquid phase-transfer catalysts has been prepared.These tris(polyoxaalkyl)amines (I) are designed to obtain the best balance between straightforward synthesis (cheap starting materials), high activity, easy recovery, and low toxicity.The catalysts are synthesized from ethylene glycols by a simple one-step method in yields in the range of 65-81percent.They show high catalytic effects in aliphatic nucleophic substitutions and aromatic nucleophilic substitutions on activated and unactivated molecules.In the Ullman synthesis (a new PTC reaction) there is a synergic effect of anionic activation by tridents and by copper salts.Reactions have been carried out at temperatures up to 180 deg C without evidence of decomposition of the tris(polyoxaalkyl)amines. The behavior and catalytic activity of these catalysts are discussed.