Laser Photolysis and CIDEP Studies of the Formation of Phenyl-Substituted Group 4B Element (Silicon, Germanium, and Tin)-Centered Radicals in Direct Photoejection of the Group 4B Element-Centered Anions

Article abstract of DOI:10.1021/ja00260a002

Phenyl-substituted group 4B element-centered radicals generated by the direct photoejection from the group 4B element-centered anions were observed by laser photolysis at room temperature.In order to claify the mechanism of this process, CIDEP study of the photolysis of the group 4B element-centered anions was carried out at 77 and 4.2 K.From the emissive patterns observed for the germyl and stannyl anions after the excitation by a pluse laser, the photoejection reactions were most probably considered to occur from triplet anions.