Crystal Growth & Design
Article
(3) (a) Gsanger, M.; Oh, J. H.; Konemann, M.; Hoffken, H. W.;
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The consistency between the two structures shows that the
preferred interaction in this molecule is between the π-acidic
F12BsubPc and the π-basic naphthoxy substituent. Both of these
arrangements are similar to what is typically observed in the
solid-state arrangements of phenoxy-F12BsubPcs (as described
above), but the structures of 3 show more π-stacking overlap.
In the structures of phenoxy-F12BsubPc20 and 4-methylphe-
noxy-F12BsubPc,21 the phenol π-stacks with the concave face of
the neighboring F12BsubPc unit at Cg−Cg distances of
3.6048(19) and 3.5320(18) Å, respectively. Because of the
smaller area of the π-basic phenoxy unit compared to the
naphthoxy group, however, there are no additional interactions
with the convex face of the F12BsubPc moiety. In other words,
the increased π-basicity of the naphthoxy substituent over the
phenoxy substituent allows greater π-acid/π-base interactions
for β-naphthoxy-F12BsubPc in the solid state.
Krause, A.-M.; Bao, Z.; Wurthner, F. Angew. Chem., Int. Ed. 2010, 49,
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Yip, C.; Bender, T. P. Cryst. Growth Des. 2012, 12, 1095−1100.
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(12) Smith, C. E.; Smith, P. S.; Thomas, R. L.; Robins, E. G.;
Collings, J. C.; Dai, C.; Scott, A. J.; Borwick, S.; Batsanov, A. S.; Watt,
S. W.; Clark, S. J.; Viney, C.; Howard, J. A. K.; Clegg, W.; Marder, T.
B. J. Mater. Chem. 2004, 14, 413−420.
CONCLUSIONS
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The addition of a π-basic substituent onto both BsubPc and
F12BsubPc produces increased π-stacking interactions at shorter
distances over those with less π-basic substituents. These
additional interactions produce variations in the crystal packing
motifs of typical phenoxy-BsubPcs14 and phenoxy-
F12BsubPcs,20,21 suggesting that an increase in the available π-
electron density interacts favorably with any BsubPc. It has
been shown that BsubPc is π-electron-deficient and thus is a π-
acid. For this reason, we believe that the increased π-electron
stacking is due to a π-acid/π-base interaction between the π-
basic axial derivatives of naphthoxy and methoxyphenoxy and
the π-acidic BsubPc and F12BsubPc. This conclusion is further
supported by the increased number of π−π interactions seen in
the crystal structure of compound 3 and the decreased number
of interactions seen in the structures of other phenoxy-BsubPc
derivatives having π-acidic phenols as the axial substi-
tuent.26−28This study provides evidence that π-acid/π-base
interactions can successfully be used in the crystal engineering
of BsubPc. In fact, the three naphthoxy derivatives display a
one- or two-dimensional infinite ribbon structure in the solid
state that may provide improved electronic properties. For this
reason, these materials possess great potential for use as
electronic materials.
(13) (a) Fulford, M. V.; Jaidka, D.; Paton, A. S.; Morse, G. E.;
Brisson, E. R. L.; Lough, A. J.; Bender, T. P. J. Chem. Eng. Data 2012,
57, 2756−2765. (b) Kietaibl, H. Monatsh. Chem. 1974, 105, 405−418.
(14) Paton, A. S.; Morse, G. E.; Lough, A. J.; Bender, T. P.
CrystEngComm 2011, 13, 914−919.
(15) Paton, A. S.; Lough, A. J.; Bender, T. P. CrystEngComm 2011,
13, 3653−3656.
(16) Virdo, J. D.; Kawar, Y. H.; Bender, T. P. CrystEngComm 2013,
15, 3187−3199.
(17) Rodríguez-Morgade, M. S.; Claessens, C. G.; Medina, A.;
́ ́
Gonzalez-Rodríguez, D.; Gutierrez-Puebla, E.; Monge, A.; Alkorta, I.;
Elguero, J.; Torres, T. Chem.Eur. J. 2008, 14, 1342−1350.
(18) Claessens, C. G.; Gonzalez-Rodriguez, D.; del Rey, B.; Torres,
T.; Mark, G.; Schuchmann, H.-P.; von Sonntag, C.; MacDonald, J. G.;
Nohr, R. S. Eur. J. Org. Chem. 2003, 2547−2551.
(19) Morse, G. E.; Maka, J. F.; Lough, A. J.; Bender, T. P. Acta
Crystallogr. 2010, E66, o3057.
(20) Claessens, C. G.; Torres, T. Angew. Chem., Int. Ed. 2002, 41,
2561−2565.
(21) Paton, A. S.; Lough, A. J.; Bender, T. P. Acta Crystallogr. 2010,
E66, o3059.
ASSOCIATED CONTENT
* Supporting Information
Materials, synthetic procedures, crystallographic data, and CIFs.
This material is available free of charge via the Internet at
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S
(22) Morse, G. E.; Helander, M. G.; Maka, J. M.; Lu, Z.-H.; Bender,
T. P. ACS Appl. Mater. Interfaces 2010, 2, 1934−1944.
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(23) Gonzalez-Rodríguez, D.; Torres, T.; Olmstead, M. M.; Rivera, J.;
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Herranz, M. A.; Echegoyen, L.; Castellanos, C. A.; Guldi, D. M. J. Am.
Chem. Soc. 2006, 128, 10680−10681.
AUTHOR INFORMATION
Corresponding Author
Notes
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(24) Morse, G. E.; Paton, A. S.; Lough, A.; Bender, T. P. Dalton
Trans 2010, 39, 3915−3922.
(25) Kobayashi, N.; Mack, J.; Ishii, K.; Stillman, M. J. Inorg. Chem.
2002, 41, 5352−5354.
(26) Paton, A. S.; Lough, A. J.; Bender, T. P. Acta Crystallogr. 2011,
E67, o505−506.
The authors declare no competing financial interest.
(27) Paton, A. S.; Lough, A. J.; Bender, T. P. Acta Crystallogr. 2011,
E67, o57.
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