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233
meter. Irradiation was carried out in standard Pyrex
NMR tubes using the full light of a DRSH-1000 high-
pressure mercury lamp (1 kW). A thermal filter used to
prevent the heating of the sample.
(Me3Si)2NBr. The fraction (6 g) containing Me3SiBr,
CH2ÄCHCH2Br, (Me3Si)2NH (identified by means of
/
GLC, in the ratio 2:1:6) was collected as well as CH2Ä
/
CHCH2N(SiMe3)2 (3.5 g), Et3SiBr (3.6 g), and the
The analysis of CIDNP effects was carried out using
the existing rules [9]. The sign of net CIDNP effect (G)
observed in high magnetic field is defined by the product
of multiplication of the following parameters:
addition product Et3SiCH2CHBrCH2N(SiMe3)2 (6.6
g), yield 15%, b.p. 85 8C/2 mm, n2D3ꢀ
/
1.4522; d (1H)
CH2Si);
); 2.99 (m,
in CDCl3: 0.07 (s, 18H, Me3Si); 0.57 (m, 6H, Ã
0.99 (m, 9H, CH3Ã); 0.96 (m, 2H, ÃCH2SiÃ
2H, NCH2); 3.66 (m, 1H, CHBr).
/
/
/
/
Gꢀm × o × Dg × A
where m is the multiplicity of the RP-precursor (‘ꢁ
triplet and uncorrelated pair, and ‘ꢃ’ for singlet
precursor), o is ‘ꢁ’ for ‘in-cage’ and ‘ꢃ’ for’ escape
/
’ for
2.3. Reaction of (MeO)3SiCH2CHÄ
/CH2 with
/
(Me3Si)2NBr
/
/
recombination products, Dg is the sign of difference in
g-factors of the radical with polarized nucleus and
radical partner in the RP, A is the sign of hyperfine
interaction constant of nucleus under study in the
radical. The sign of G reflects the phase of the NMR
The mixture of 14 g (0.086 M) of (MeO)3SiCH2CHÄ
/
CH2 and 21 g (0.086 M) of (Me3Si)2NBr was subjected
to UV irradiation during 4 h. The irradiation was
stopped when the reaction mixture became turbid. The
following products were isolated by fractional distilla-
tion: the mixture of Me3SiBr and (Me3Si)2NH (5.4 g) in
signal of nucleus under study: ‘ꢁ
/
’ for enhanced
absorption (A) and ‘ꢃ’ for the emission (E). For
/
the ratio 1:5, the initial (MeO)3SiCH2CHÄ
and the addition product (MeO)3SiCH2CHBrCH2N-
(SiMe3)2 (3.5 g), yield 10%, b.p. 81 8C/3 mm, n1D9ꢀ
1.4567, d (1H) in CDCl3: 0.07 (s, 18H, MeSi); 3.88 (s,
9H, (MeO)3Si); 1.87 (m, 2H, CH2Si); 3.13 (m, 2H, Ã
NCH2Ã); 4.18 (m, 1H, CHBr). CH2ÄCHCH2N(SiMe3)2
(2.7 g) has also been isolated.
/
CH2 (3.8 g),
example, if one consider certain group of, say, protons
in the product resulting from the recombination
/
(o is ‘ꢁ
/
’) of the uncorrelated RP (m is ‘ꢁ’), and if this
/
group has belonged to the radical with the g-factor
smaller than that of the partner radical of the RP (Dg is
/
/
/
‘ꢃ
/
’), and if the sign of hyperfine interaction for this
’),
particular group in the radical is negative (A is ‘ꢃ
/
then the multiplication gives
2.4. Reaction of (EtO)3SiCH2CHÄ
/CH2 with
m × o × Dg × A
ꢀꢁ(A);
(Me3Si)2NBr
ꢁ × ꢁ × ꢃ × ꢃ
The mixture of 6.6 g (0.032 M) of (EtO)3SiCH2CHÄ
/
and one should observe the enhanced absorption of the
NMR signal of this group.
CH2 and 7.7 g (0.032 M) (Me3Si)2NBr was subjected to
UV irradiation. The irradiation was stopped when the
reaction mixture became turbid. The following products
were isolated by fractional distillation: the mixture of
Me3SiBr, (EtO)3SiBr, and (Me3Si)2NH (4 g) in the ratio
2.1. Reaction of Me3SiCH2CHÄ
/
CH2 with (Me3Si)2NBr
The mixture of 11 g (0.096 M) of allyltrimethylsilane
and 23 g (0.096 M) of (Me3Si)2NBr was degassed
according to freeze-pump-thaw techinque and then
subjected to UV irradiation (UV lamp DRT-400) during
10 h in a sealed glass tube. Following product were
4:1:7, the initial (EtO)3SiCH2CHÄ
addition product (EtO)3SiCH2CHBrCH2N(SiMe3)2 (1.7
g), yield 11%, b.p. 105 8C/4 mm, n2D0ꢀ1.4582, d (1H) in
CDCl3: 0.08 (s, 18H, Me3Si); 1.34 (m, 9H, CH3Ã); 3.79
(m, 6H,ÃCH2OSi); 1.84 (m, 2H, ÃCH2Si); 3.11 (m, 2H,
NCH2); 4.2 (m, 1H, ÃCHBr).
/
CH2 (2.6 g), and the
/
/
/
/
isolated by fractional distillation: Me3SiBr (2.7 g), CH2Ä
/
ꢀ
/
/
CHCH2Br (1.3 g), (Me3Si)3NH (1.5 g), CH2Ä
/
CHCH2N(SiMe3)2 (4.5 g), and the addition product
Me3SiCH2CHBrCH2N(SiMe3)2 (3.7 g), yield 11%, b.p.
2.5. Reaction of Cl3SiCH2CHÄ/CH2 with (Me3Si)2NBr
61 8C/2 mm; n2D1ꢀ1.4127, d (1H) in CDCl3: 0.08 (s, 18
/
The mixture of 7.6 g (0.043 M) of Cl3SiCH2CHÄ
/CH2
H, Me3Si1), 0.45 (s, 9H, Me3Si2), 1.75 (m, 2H, Ã
3.63 (m, 2H, ꢀNCH2Ã), 4.53 (m, 1H, ÃCHBrÃ
/
CH2Si),
and 10.4 g (0.043 M) of (Me3Si)2NBr was subjected to
UV irradiation during 14 h. The following product were
isolated by fractional distillation: the mixture of Me3-
SiCl, Me3SiBr, Cl3SiBr, and (Me3Si)2NH (3.6 g) in the
/
/
/
/).
2.2. Reaction of Et3SiCH2CHÄ/CH2 with (Me3Si)2NBr
ratio 6:2:4:1, CH2Ä/CHCH2N(SiMe3)2 (1.5 g), and the
The reaction was carried out similar to the above
mentioned interaction of Me3SiCH2CHÄCH2 with
(Me3Si)2NBr (paragraph 1) for the mixture of 17 g
(0.11 M) of Et3SiCH2CHÄCH2 and 26.5 g (0.11 M) of
addition product Cl3SiCH2CHBrCH2N(SiMe3)2 (2.4 g),
yield 13.4%, B.p. 123 8C/3 mm, d (1H) in CDCl3: 0.42
/
(s, 18H, Me3Si); 2.26 (m, 2H, Ã
/
CH2Si); 3.87 (m, 2H, ꢀ
/
/
NCH2); 3.87 (m, 1H, CHBr). d (29Si) in CDCl3: 31.10 (s,