Characterization of FSi(OCH3)2(OCH2)-
J. Am. Chem. Soc., Vol. 119, No. 7, 1997 1709
nucleophilic substitution at a Si center.8 Theoretical calculations
confirm the notion that neutral siloxiranes should be strongly
stabilized by addition of an anion like fluoride to the silicon
center.9 This is actually a common feature of cyclic silanes
for which attachment to F- is proposed to lead to significant
stabilization.10 Gas-phase experimental measurements have
indeed corroborated this prediction, and a fluoride affinity of
40 ( 5 kcal mol-1 has been established for 1,1-dimethylsila-
cyclobutane.11
investigation of gas-phase ion/molecule reactions of the
FSi(OMe)2(OCH2)- ion unveils an unusually rich chemistry.
Computational Procedure
The first approach toward the structural elucidation of the product
ion of reaction 1b was to consider possible isomeric forms of
FSi(OMe)2(OCH2)- which would be consistent with mechanistic
considerations of reaction 1.15 Four different species, II-V, were
considered as likely candidates to arise from FSi(OMe)4- by elimination
of MeOH. These proposed structures and the outcome of the
The investigation of intrinsic properties of covalently bound
ionic intermediates and of molecules stabilized by binding to
an anion has been one of the most important domains of gas-
phase ion chemistry. For simple silicon-containing species, gas-
phase studies have already provided a unique view of the
reactivity of simple organosilanes and a wealth of important
thermochemical data.12 Thus, it is conceivable that ionic
siloxiranes intermediates, such as those responsible for Brook
type rearrangements,6 may be identified in the gas phase by a
judicious choice of experimental conditions. It is already known
that three-, four-, and five-membered species are likely to
mediate the reactions of silyl anions, and R-silyl carbanions,
with CO2 and N2O in the gas phase.13
calculations played an important role in the design of ion/molecule
reactions which could provide experimental insight into the structure
of the anion and a test of the theoretical predictions.
High-level ab initio calculations for Si species are usually limited
to small systems which can be handled by G2 methodology17 or
extensive correlation-consistent polarized valence basis sets.18 For more
complex species, one approach has been to mimic these molecules by
model systems with some of the substituents replaced by H atoms.
Another approach has been to use more modest basis sets which allow
calculations to be carried out to the MP4 level but for which empirical
corrections are essential to obtain the correct thermochemistry.1,2 For
our case, it was deemed more appropriate (a) to consider species which
exhibited different atom connectivities but which could correspond to
the actual experimentally observed ion and (b) to develop an appropriate
basis set for the anionic species at hand.
Ab initio calculations for ions II-V and some of the related neutral
systems were carried out using the GAMESS19 suite of programs. All
calculations were performed in the cluster of work stations located at
the CENAPAD-SP computing facilities of the University of Campinas.
The size of the systems represented by structures II-V precluded the
possibility of using very large basis sets or extending the calculations
to the highest levels of theory with our present computational facilities.
Yet, the study of systems II-V can be carried out with the help of
recent methods which are capable of generating good-quality basis sets
for anionic systems while circumventing some of the computational
limitations.20
The gas-phase reaction of F- with Si(OMe)4 was the subject
of an early study in a flowing afterglow tube and shown to
proceed exclusively by addition of F- with the subsequent
- 14
formation of a pentacoordinated adduct, FSi(OMe)4
.
This
same reaction studied in our laboratories at lower pressures and
under ion cyclotron resonance (ICR) conditions reveals a much
richer chemistry which presumably arises from unimolecular
elimination processes of energy rich pentacoordinated adduct
ions.15 The reported product distribution for this case is shown
in reaction 1. The rather unique reaction leading to the
FSi(OMe)2(OCH2)- ion (of unknown structure), and its possible
connection with siloxirane chemistry, prompted us to explore
the reactivity and structure of this ion by a combination of
experimental and theoretical techniques. It should be empha-
sized that this behavior is very specific of the reactions of F-
since products similar to that of reaction 1b are not observed in
reactions with much stronger gas-phase bases.15,16
This paper initially describes the results of ab initio calcula-
tions carried out for the FSi(OMe)2(OCH2)- ion. These
calculations predict the cyclic siloxirane-fluoride structure to
be the most stable form. In the second part, the experimental
The basic methodology used to obtain high-quality theoretical results
for these systems was to adapt the double ú valence set (DZV) of
primitive basis functions21 with the help of the generator coordinate
method (GCM).22 The GCM is a valuable tool in molecular orbital
calculations since it actually introduces a quality test for the basis set
used in a given atomic or molecular environment. In this method,
monoelectronic functions, ψ(1), are considered to be integral transforms
of the type
ψ(1) ) f(R) æ(1,R) dR
∫
where f(R) constitutes the so-called weight function, æ(1,R) represents
the generator function of Gaussian type orbitals (GTO), and integration
is performed over the space of the generator coordinate R, or exponent
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Journal of Organometallic Chemistry Library 9, Organometallic Chemistry
ReViews; Seyferth, D., Ed.; Elsevier: Amsterdam, 1980; pp 357-373.
(9) Schlegel, H. B.; Skancke, P. N. J. Am. Chem. Soc. 1993, 115, 10916.
(10) Skancke, P. N. J. Phys. Chem. 1994, 98, 3154.
(11) Sullivan, S. A.; DePuy, C. H.; Damrauer, R. J. Am. Chem. Soc.
1981, 103, 480.
(12) For comprehensive reviews, see: (a) Schwarz, H. In The Chemistry
of Organic Silicon Compounds, Part 1; Patai, S., Rappoport, Z., Eds.; John
Wiley and Sons: Chichester, 1989; pp 445-510. (b) Damrauer, R.; Hankin,
J. A. Chem. ReV. 1995, 95, 1137.
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King, G. K.; Schmitt; R. J.; Sullivan, S. A. J. Am. Chem. Soc. 1980, 102,
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(15) Silva, M. L. P.; Riveros, J. M. J. Mass Spectrom. 1995, 30, 733.
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Krempp, M.; Damrauer, R. Organometallics 1995, 14, 170.
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(18) Nicholas, J. B.; Feyereisen, M. J. Chem. Phys. 1995, 103, 8031.
(19) GAMESS: Schmidt, M. W.; Baldridge, K. K.; Boatz, J. A.; Elbert,
S. T.; Gordon, M. S.; Jensen, J. J.; Koseki, S.; Matsunaga, N.; Nguyen, K.
A.; Su, S.; Windus, T. L.; Dupuis, M.; Montgomery, J. A. J. Comput. Chem.
1993, 14, 1347.
(20) (a) Morgon, N. H.; Custodio, R.; Riveros, J. M. Chem. Phys. Lett.
1995, 235, 436. (b) Morgon, N. H.; Linnert, H. V.; Riveros, J. M. J. Phys.
Chem. 1995, 99, 11667. (c) Morgon, N. H. J. Phys. Chem. 1995, 99, 17832.
(21) Dunning, T. H., Jr.; Hay, P. J. In Methods of Electronic Structure
Theory; Shaefer, H. F., III, Ed., Plenum Press: New York, 1977; Chapter
1, pp 1-27.
(22) (a) Custodio, R.; Goddard, J. D.; Giordan, M.; Morgon, N. H. Can.
J. Chem. 1992, 70, 580. (b) Custodio, R.; Giordan, M.; Morgon, N. H.;
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