S.C. Ngo et al. / Polyhedron 22 (2003) 1575ꢁ
/1583
1583
[14] M. Kemmler, M. Lazell, P. O’Brien, D.J. Otway, J.-H. Park, J.R.
Walsh, J. Mater. Sci. Mater. Electron. 13 (2002) 531.
[15] R. Nomura, Y. Seki, H. Matsuda, Thin Solid Films 209 (1992)
145.
utilization of unsymmetrically substituted ligands, in
which the judicious selection of peripheral substituents
according to their steric size and stability, is taken into
consideration [14].
[16] R. Nomura, Y. Seki, K. Konishi, H. Matsuda, Appl. Organomet.
Chem. 6 (1992) 685.
[17] R. Nomura, Y. Seki, H. Matsuda, J. Mater. Chem. 2 (1992) 765.
[18] M. Kemmler, M. Lazell, P. O’Brien, D.J. Otway, Mater. Res. Soc.
Symp. Proc. 606 (2000) 147.
5. Supplementary material
[19] S.M. Zemskova, S.V. Sysoev, L.A. Glinskaya, R.F. Klevtsova,
S.A. Gromilov, S.V. Larionov, Electrochem. Soc. Proc. 97 (1997)
1429.
Full lists of crystallographic data for 1 (CCDC-
196807), 2 (CCDC-196808), 3 (CCDC-196809), 4
(CCDC-196810), 5 (CCDC-196811), and 6 (CCDC-
196812), including atomic coordinates, bond lengths
and angles, and anisotropic thermal parameters have
been deposited with the Cambridge Crystallographic
Data Centre. Copies of this information may be
obtained from The Director, CCDC, 12 Union Road,
[20] P. O’Brien, J.R. Walsh, I.M. Watson, L. Hart, S.R.P. Silva, J.
Cryst. Growth 167 (1996) 133.
[21] M.R. Lazell, P. O’Brien, D.J. Otway, J.-H. Park, Chem. Mater.
11 (1999) 3430.
[22] L.A. Glinskaya, S.M. Zemskova, R.F. Klevtsova, J. Struct.
Chem. 40 (2000) 979.
˚
[23] A. Uhlin, S. .Akerstrom, Acta Chem. Scand. 25 (1971) 393.
¨
[24] A. Bruce, J.L. Corbin, P.L. Dahlstrom, J.R. Hyde, M. Minelli,
E.I. Stiefel, J.T. Spence, J. Zubieta, Inorg. Chem. 21 (1982) 917.
[25] G.M. Sheldrick, SHELXTL-97, Bruker, Analytical X-ray Instru-
ments Inc., Madison, WI, 2001.
Cambridge, CB2 1EZ, UK (fax: ꢂ44-1233-336033; e-
mail: deposit@ccdc.cam.ac.uk or www: http://
/
[26] M.L. Riekkola, O. Makitie, J. Thermal Anal. 25 (1982) 89.
¨
[27] C.G. Sceney, J.O. Hill, R.J. Magee, Thermochim. Acta 11 (1975)
301.
Acknowledgements
[28] G. D’Ascenzo, W.W. Wendlandt, J. Thermal Anal. 1 (1969) 423.
[29] S.V. Larionov, L.A. Kosareva, A.F. Malikova, A.A. Shklyaev,
Russ. J. Inorg. Chem. 22 (1977) 1299.
We thank the New York State Science and Technol-
ogy Foundation and Center for Advanced Thin Film
Technology for financial support.
[30] P.D.W. Boyd, S. Mitra, C.L. Raston, G.L. Rowbottom, A.H.
White, J. Chem. Soc., Dalton Trans. (1981) 13.
[31] M. Bonamico, G. Dessy, A. Mugnoli, A. Vaciago, L. Zambonelli,
Acta Crystallogr. 19 (1965) 886.
[32] F. Jian, Z. Wang, Z. Bai, Z. You, H.-K. Fun, K. Chinnakali, I.A.
Razak, Polyhedron 18 (1999) 3401.
References
[33] A. Pignedoli, G. Peyronel, Gazz. Chim. Ital. 92 (1962) 745.
[34] G. Peyronel, A. Pignedoli, L. Antolini, Acta Crystallogr., Sect. B
28 (1972) 3596.
[1] T.T. Kodas, M.J. Hampden-Smith (Eds.), The Chemistry of
Metal CVD, VCH Publishers, New York, 1994.
[2] J.T. Spenser, Prog. Inorg. Chem. 41 (1994) 145.
[3] S.P. Murarka, S.W. Hymes, Crit. Rev. Solid State Mater. Sci. 20
(1995) 87.
[35] A.M.M. Lanfredi, F. Ugozzoli, A. Camus, J. Chem. Crystallogr.
26 (1996) 141.
[36] E. Kello, V. Kettman, J. Garaj, Coll. Czech. Chem. Commun. 49
¨
[4] T.J. Marks, Pure Appl. Chem. 67 (1995) 313.
[5] P. Doppelt, Coord. Chem. Rev. 178-180 (1998) 1785.
[6] M.J. Hampden-Smith, T.T. Kodas, A. Ludviksson, in: L.V.
Interrante, M.J. Hampden-Smith (Eds.), Chemistry of Advanced
Materials, Wiley-VCH, New York, 1998, p. 143.
[7] T.N. Theis, IBM J. Res. Develop. 44 (2000) 379.
[8] R. Nomura, K. Miyakawa, T. Toyosaki, H. Matsuda, Chem.
Vapour Depos. 2 (1996) 174.
(1984) 2210.
[37] H. Iwasaki, K. Kobayashi, Acta Crystallogr., Sect. B 36 (1980)
1655.
[38] W.E. Hatfield, P. Singh, F. Nepveu, Inorg. Chem. 29 (1990) 4214.
[39] J.M. Martin, P.W.G. Newman, B.W. Robinson, A.H. White, J.
Chem. Soc., Dalton Trans. (1972) 2233.
ˇ
[40] V. Kettman, J. Garaj, S. Ku´dela, Coll. Czech. Chem. Commun.
42 (1977) 402.
[41] (a) J.-P. Lang, J.-M. Lei, G.-Q. Bian, J.-H. Cai, B.-S. Kang, X.-Q.
Xin, Jiegou Huaxue 14 (1995) 297;
[9] R. Nomura, K. Kanaya, H. Matsuda, Ind. Eng. Chem. Res. 28
(1989) 877.
[10] S.M. Zemskova, P.A. Stabnikov, S.V. Susoev, I.K. Igumenov,
Electrochem. Soc. Proc. 98 (1999) 286.
(b) J.-P. Lang, J.-M. Lei, G.-Q. Bian, J.-H. Cai, B.-S. Kang, X.-Q.
Xin, Chem. Abstr., 123 (1995) 131141.
[11] Y.u. M. Rumyantsev, N.I. Fainer, M.L. Kosinova, B.M. Ayupov,
N.P. Sysoeva, J. Phys. IV 9 (1999) 777.
[42] P.W.G. Newman, C.L. Raston, A.H. White, J. Chem. Soc.,
Dalton Trans. (1973) 1332.
[12] N.I. Fainer, Yu.M. Rumyantsev, M.L. Kosinova, G.S. Yur’ev,
E.A. Maksimovskii, S.M. Zemskova, S.V. Sysoev, F.A. Kuznet-
sov, Inorg. Mater. 34 (1998) 1049.
[43] F.W.B. Einstein, J.S. Field, Acta Crystallogr., Sect. B 30 (1974)
2928.
[13] N.I. Fainer, Yu.M. Rumyantsev, M.L. Kosinova, F.A. Kuznet-
sov, Electrochem. Soc. Proc. 97 (1997) 1437.
[44] M.L. Riekkola, Acta Chem. Scand. A 37 (1983) 691.
[45] K. Hagen, C.J. Holwill, D.A. Rice, Inorg. Chem. 28 (1989) 3239.