Chemistry Letters Vol.37, No.3 (2008)
263
Table 1. EL performance of the devices
(a)
Al (100 nm)
Turn on
voltage/V luminance/cd mÀ2
Maximum
Luminance efficiency at
100 cd mÀ2/cd AÀ1
Device
Cs:BCP (1:1, 20 nm)
TPBI (30 nm)
Al (100 nm)
Cs:BCP (1:1, 20 nm)
CZPT+6%Ir(ppy)3 (70 nm)
PEDOT (20 nm)
ITO
A
B
8.1
4100
7000
2.5
3.0
10.5
CZPT+6%Ir(ppy)3 (70 nm)
PEDOT (20 nm)
ITO
and exciton blocker, the performance of device B increased to
7000 cd/m2 and 3.0 cd/A, respectively. The HOMO level of
TPBI (6.20 eV as determined) is higher than that of CZBP
(5.76 eV) by 0.44 eV, which increased the HOMO energy level
barrier between the cathode and the emitting layer. Thus, the
holes were blocked and the charge recombination was efficiently
confined in the emitting layer consequently, suggesting that
TPBI is an effective hole-blocking layer to improve the device
performance.
Device B
Device A
(b)
7000
Device A
Device B
6000
5000
4000
3000
2000
1000
0
In summary, a novel bipolar host, CZPT was prepared
and employed as the host in phosphorescent OLEDs. CZPT
exhibited excellent thermal stability and desirable amorphous
state. Two Ir(ppy)3-based devices, with CZPT as the hosts
possessed high performance. The device exhibited improved
efficiency when a hole-blocking layer of TPBI was used.
0
100
200
300
400
500
600
References and Notes
-2
Current Density/mA cm
1
J. Ding, J. Gao, Y. Cheng, Z. Xie, L. Wang, D. Ma, X. Jing,
M. A. Baldo, D. F. O’Brien, Y. You, A. Shoustikov, S.
Figure 3. Characteristics of OLEDs: (a) EL device structure,
(b) current–luminance curves.
2
Figure 2 outlines the UV spectrum, in which the absorption
at 375 nm originates from the ꢀ–ꢀÃ transitions from the
electron-donating carbazole to the electron-accepting phenan-
throline moiety. The experimental values of HOMO levels were
determined with a Riken AC-2 photoemission spectrometer
(PES), and those of LUMO (S1) and the triplet energy levels
(T1) were estimated from the UV and phosphorescent spectra,
respectively. The HOMO–LUMO energy gap of CZPT was
determined to be 3.18 eV. The triplet energy level of CZPT
(3.24 eV) is higher than that of Ir(ppy)3 (2.44 eV), indicating
that CZPT is suitable to be used as the host material for Ir(ppy)3
due to the prevention of back energy transfer from the guest
to the host.10
Phosphorescent OLED devices using CZPT as the host were
fabricated by vacuum deposition in two structures as outlined
in Figure 3a. As shown in Figure 2, the EL spectra exhibit
the typical green luminescence around 520 nm originated from
Ir(ppy)3, implying the energy of triplet exitons are well trans-
ferred from the host of CZPT to the guest of Ir(ppy)3.
Figure 3b outlines the representative current–luminance
(I–L) characteristics of CZPT devices and the results are summa-
rized in Table 1. In device A, poly(3,4-ethylenedioxythiophene
(PEDOT) is employed to promote the hole injection, and CZPT
doped with 6% mol of Ir(ppy)3 served as the emitting layer.
Device A exhibits good performance with the maximum lumi-
nance of 4100 cd/m2 and current efficiency at 100 cd/m2 of
2.5 cd/A, individually. When a layer of 1,3,5-tris(N-phenyl-
benzimidazol-2-yl)benzene (TPBI) was employed as the hole
3
4
Y. Shirota, M. Kinoshita, T. Noda, K. Okumoto, T. Ohara,
T. H. Huang, J. T. Liu, L. Y. Chen, Y. T. Lin, C. C. Wu,
5
6
7
8
Q. Zhang, J. Chen, Y. Cheng, L. Wang, D. Ma, X. Jing,
CZBA: H NMR (DMSO-d6, ppm) 8.26 (s, 2H), 8.24–8.22
1
(d, 2H), 8.10–8.07 (d, 2H), 7.60–7.58 (d, 2H), 7.42–7.38
(m, 4H), 7.28–7.24 (t, 2H). 13C NMR (DMSO-d6, ppm)
139.9, 138.4, 135.9, 126.3, 125.3, 122.8, 120.5, 120.1, 109.7.
The mixture of CZBA (1.03 g, 3.6 mmol), DBPT (1.01 g,
3 mmol), Pd(PPh3)4 (0.10 g, 0.09 mmol), K2CO3 (2 M,
15 mL), and THF (60 mL) was degassed and refluxed for
48 h. The precipitation was filtered and washed with THF,
then recrystallized in DMF to give a yellow solid of CZPT.
Yield: 0.83 g (42%). 1H NMR (DMSO-d6, ppm) 9.70 (s, 2H),
9.07–9.06 (d, 2H), 8.41–8.37 (m, 8H), 8.28 (s, 2H), 7.99–
7.96 (d, 4H), 7.64–7.56 (m, 8H), 7.46–7.41 (t, 4H). 13C NMR
(DMSO-d6, ppm) 151.4, 149.6, 140.6, 137.5, 136.2, 135.3,
133.4, 129.0, 128.4, 128.0, 126.1, 126.0, 123.5, 120.4,
120.2, 109.7. IR (KBr, cmÀ1): 3438, 1602, 1525, 1449,
1335, 1229.
9
10 K.-T. Wong, Y.-M. Chen, Y.-T. Lin, H.-C. Su, C.-C. Wu,