Reaction of O(3P) with Hexamethyldisilane

Article abstract of DOI:10.1021/j100268a034

The title reaction has been investigated at room temperature in a discharge flow system and also by stationary Hg(³P₁)-sensitized N2O photolysis experiments.By far the most important reaction is the insertion of O(³P) atoms into the Si-Si bond yielding a vibrationally excited hexamethyldisiloxane.The rate constant for this reaction has been measured to be (1.3 +/- 0.3) x 10^-13 cm³ s^-1.The vibrationally excited hexamethyldisiloxane could not be stabilized at pressures up to 1 bar, decomposing mainly by Si-C bond cleavage.A reaction mechanism is proposed to account for the observed products.