properties, such that the carrier recombination zone (RZ) can be
enlarged and stayed away from the cathode to avoid exciton
quenching. The resulting EL performances are also depicted in
Fig. 7 and Table 4 for a fair comparison.
Acknowledgements
This work was supported by the National Science Council of
Taiwan and the Ministry of Economic Affairs (100-EC-17-A-08-
S1-042). We are also grateful to the National Center for High-
Performance Computing for computer time and facilities.
Evidently, the associated turn-on voltages are significantly
lower due to the removal of inherent barriers among electron,
hole transport layers and even host material. As shown in Table
4, device C1 exhibited peak EL efficiencies of 12.9%, 27.9 cd Aꢀ1
and 21.8 lm Wꢀ1 for the forward direction. At the practical
brightness of 102 cd mꢀ2 (and 103 cd mꢀ2), the efficiencies were
recorded to be 12.6% (12.1%), 27.5 cd Aꢀ1 (26.4 cd Aꢀ1),
and 16.1 lm Wꢀ1 (11.3 lm Wꢀ1), respectively, while device C2
exhibited efficiencies of up to 10.7%, 18.5 cd Aꢀ1 and
19.3 lm Wꢀ1. At the practical brightness of 102 cd mꢀ2 (and
103 cd mꢀ2), the forward efficiencies also remained high at
around 8.7% (7.8%), 15.0 cd Aꢀ1 (13.5 cd Aꢀ1) and 7.4 lm Wꢀ1
(4.6 lm Wꢀ1), confirming their superiority versus those
employing CBP host. The increased carrier recombination
near the 3DTAPBP/BP4mPy interface might have contributed
to the balanced carrier transport. Furthermore, their wider
triplet energy gaps also wielded significant impacts on the
confinement of excitons and carriers. In addition, upon closer
inspection of the efficiency curves of all tested devices, one can
clearly observe similar trends of reduced roll-off at higher
brightness. This observation is in contrast to the triplet–triplet
annihilation (TTA) observed in typical phosphorescent OLEDs
with unipolar host material.36 As the mitigated TTA phenom-
enon was prevalent, the result indicates that the exciton
formation in C is not localized at the interface; instead, the
excitons may be spread over both electron and hole transport
layers. On the basis of this scenario, we propose that the
carriers not only hop onto the host but also enter directly
into the dopants. Furthermore, the carrier trapping in both
emitting layers also causes the relaxation of the excitons and
gathering in a narrow space.37 Overall, this simple double-layer
architecture incorporating 3DTAPBP and BP4mPy renders
satisfactory performances even under the conditions of high
current density.
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In summary, we present the design and synthesis of three rela-
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J. Mater. Chem., 2012, 22, 10684–10694 | 10693