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Fig. 4 Schematic diagram of the band structures of CuO/CuSCN valence
state heterojunctions and the possible photocatalytic mechanism. (A) Band
structure of the CuSCN and CuO semiconductor. (B) and (C) show the
electron migration mechanism of photoinduced carriers under UV + Vis or
visible light irradiation, respectively.
the CuO CB migrate to the CuSCN VB and combine with holes in the
CuSCN VB. The stimulated electrons in the CuSCN CB can also transfer
to the CB of CuO, and then recombine with holes in the CuO VB.
Fig. 3 Photodegradation of MB dye as a function of irradiation time. (a)
Photocatalytic activity of the CuO/CuSCN (1 : 2) composite under visible
light irradiation. (b) Comparative photocatalytic results of different sam-
ples. (c) Photocatalytic activity of the CuO/CuSCN (1 : 2) composite under Therefore, restricting the photocatalytic activity.
UV-vis light irradiation. (d) Photocatalytic activities (1 : 2) comparison of the
results of UV + Vis and Vis light irradiation.
A CuO/CuSCN valence state heterojunction photocatalyst was
synthesized by a facile one-step low temperature chemical bath
method. While the pure CuSCN and CuO do not have photocatalytic
activity, the as-prepared CuO/CuSCN heterojunction photocatalyst
exhibited strong visible light absorption and photocatalytic activity
against MB. The photocatalytic activity could also be controlled by
adjusting the molar ratio of raw materials, and the sample with the
most powerful photocatalytic activity is obtained when the molar ratio
absorption in the visible light region, but also tune the photocatalytic
activities of the CuO/CuSCN composites.
It is known that photocatalytic activity is greatly affected by the
recombination of the photo-generated electrons and holes which could
decrease the quantum yield. Photoluminescence emission spectroscopy
is an effective approach to understanding the separation capacity of the
photo-generated carriers because of the direct result of the recombina-
tion of the free carriers. Herein, 320 nm is chosen as the excitation
wavelength, the PL spectra of CuO/CuSCN, pure CuSCN and CuO are
displayed in Fig. S5 (ESI†). It can be observed that pure CuSCN and
CuO (Fig. S5B, ESI†) have strong emission peaks, deriving from the
direct electron–hole recombination of the band transition while the
CuO/CuSCN composites have lower peaks, suggesting that the photo-
induced carriers can migrate easily between the CuO and CuSCN
crystals and that recombination of the charges can be greatly limited.
On the basis of the experimental and theoretical results, a schematic
diagram of the band levels of CuO/CuSCN and the possible photo-
catalytic reaction mechanism are given. Fig. 4A shows the band-edge of
CuSCN and CuO. Neither CuSCN nor CuO possess photocatalytic activity
under suitable light irradiation which might be due to the fast
recombination of electrons and holes according to the PL results above.
The photocatalytic activity results reveals that the CuO/CuSCN valence
state heterojunction photocatalyst has much greater activity under
visible light irradiation than under irradiation by UV + Vis light. We
know that visible light only excites the CuO semiconductor to generate
electrons and holes (Fig. 4C), and that the electrons could migrate to the
VB of CuSCN, which is mainly a hybrid of Cu 3d. The electron can be
3 2
of Cu(NO ) and NaSCN is 1 : 2. Meanwhile, visible light enhanced and,
surprisingly, ultraviolet light restrained photocatalytic activity is dis-
played by the CuO/CuSCN valence state heterojunction photocatalyst.
Based on our systematic analysis, proper migration of photo-generated
carriers is proposed to explain the visible light enhanced and ultraviolet
light restrained photocatalytic processes. At the same time, this valence
state heterojunction photocatalyst can extend the scope of photocata-
lytic development which will lead to more potential applications.
This work was financially supported by a research Grant from the
National Basic Research Program of China (973 Program; No.
2
(
013CB632401), the National Natural Science Foundation of China
No. 21333006, 11374190, 21007031 and 51002091).
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