Structural properties of low temperature silicon oxide films prepared by remote plasma-enhanced chemical vapor deposition

Article abstract of DOI:10.1149/1.2220949

High structural quality silicon dioxide films have been prepared by the remote plasma-enhanced chemical vapor deposition technique using silicon tetrachloride and oxygen as source materials, at substrate temperatures lower than 200°C. In addition to the s

Full text of DOI:10.1149/1.2220949

Downloaded on 2015-03-08 to IP 141.214.17.222 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-08 to IP 141.214.17.222 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-08 to IP 141.214.17.222 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-08 to IP 141.214.17.222 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-08 to IP 141.214.17.222 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).