Physica Status Solidi (A) Applied Research p. 107 - 111 (1983)
Update date:2022-08-11
Topics:
Anufriev
Gurtov
Charge accumulation of non-equilibrium holes induced by X-ray irradiation is studied in silicon oxide layers. Thermal silicon dioxides obtained by oxidation in dry oxygen using the chlorine technique as well as an anodic silicon dioxide are used as gate d
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