MoS3 thin film cathodes prepared by chemical vapor deposition

Article abstract of DOI:10.1149/1.2096437

Amorphous molybdenum trisulfide (MoS₃) is a promising candidate as a host material in a lithium insertion battery. Thin films of MoS₃ have been prepared by chemical vapor deposition from molybdenum hexafluoride (MoF₆) and hexamethyldisilthiane (HMDST). Continuous, adherent films were obtained at deposition temperatures in the range of 150° to 400°C on aluminum, nickel, silica, and alumina substrates. Infrared analyses indicate that deposition temperatures between 200° and 250°C produce the purest films. The best electrochemical performance was achieved on films deposited in the range of 210°C to 240°C, which corresponded to those films analytically determined to be MoS₃.

Full text of DOI:10.1149/1.2096437

Downloaded on 2015-01-21 to IP 132.174.255.116 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-01-21 to IP 132.174.255.116 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-01-21 to IP 132.174.255.116 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-01-21 to IP 132.174.255.116 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-01-21 to IP 132.174.255.116 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).