Optimized deposition parameters for low pressure chemical vapor deposited titanium silicide

Article abstract of DOI:10.1149/1.2095387

A system and a process have been developed for the low pressure chemical vapor deposition (LPCVD) of titanium silicide. The authors report for the first time the optimization of LPCVD titanium silicide film properties against the deposition parameters, including the temperature, pressure, and SiH₄/TiCl₄ flow rate ratios. Smooth, reproducible, low resistivity (15-20 μΩ-cm) titanium silicide films have been deposited at a temperature of 730°C, a pressure of 67 mtorr, and a SiH₄/TiCl₄ flow rate ratio of 20/2. The as-deposited films did not require any post-deposition annealing to achieve this low resistivity. All the as-deposited films had a Si/Ti metal ratio of about 2 (determined by Rutherford backscattering spectroscopy). Within the Auger detection limit, no contamination was observed in the silicide films, and the films had uniform composition except for a transition region between the titanium silicide and the underlying polysilicon layers.

Full text of DOI:10.1149/1.2095387

Downloaded on 2015-03-16 to IP 142.58.129.109 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-16 to IP 142.58.129.109 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-16 to IP 142.58.129.109 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-16 to IP 142.58.129.109 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-16 to IP 142.58.129.109 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-16 to IP 142.58.129.109 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-16 to IP 142.58.129.109 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).