Full text of DOI:10.1063/1.107403

Highly selective sputtering of silicon from TiSi2 at elevated temperature
J. M. E. Harper, S. Motakef, and D. Moy
Citation: Applied Physics Letters 60, 1196 (1992); doi: 10.1063/1.107403
View online: http://dx.doi.org/10.1063/1.107403
View Table of Contents: http://scitation.aip.org/content/aip/journal/apl/60/10?ver=pdfcov
Published by the AIP Publishing
Articles you may be interested in
Preferential sputtering of silicon from metal silicides at elevated temperatures
J. Vac. Sci. Technol. A 12, 1542 (1994); 10.1116/1.579352
Stresses in sputtered TiSi multilayers and polycrystalline silicide films
J. Appl. Phys. 63, 4979 (1988); 10.1063/1.340443
Highresolution photovoltaic position sensing with Ti/Si superlattices
Appl. Phys. Lett. 49, 1647 (1986); 10.1063/1.97254
Low temperature material reaction at the Ti/Si(111) interface
J. Vac. Sci. Technol. A 4, 865 (1986); 10.1116/1.573797
Summary Abstract: Resistivityprocess relationships in TiSi2 formed from Ti–Si reaction couples
J. Vac. Sci. Technol. A 3, 723 (1985); 10.1116/1.573295
This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
129.97.125.164 On: Fri, 12 Dec 2014 15:48:40

This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
129.97.125.164 On: Fri, 12 Dec 2014 15:48:40

This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
129.97.125.164 On: Fri, 12 Dec 2014 15:48:40

This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
129.97.125.164 On: Fri, 12 Dec 2014 15:48:40