WSix FORMATION IN W-Si MULTILAYERS.

Article abstract of DOI:10.1139/p87-134

The formation of WSi//x phases from multiple thin layers of W and Si was investigated. Tungsten and silicon thin films of approximately 5 nm thickness were deposited sequentially onto GaAs substrates by dc magnetron sputtering from elemental targets. The total film thickness was approximately 300 nm. The multilayered structure was subjected to rapid thermal annealing at 900 degree C. The extent of the reaction, the grain size, and the crystal structure of the silicides were determined using transmission electron microscopy and X-ray diffraction. Schottky contacts were of good quality for x less than equivalent to 0. 52, with a barrier height ( PHI ) of 0. 7 V and an ideality factor (n) of 1. 15. Schottky contacts with higher silicon concentrations were poor. The WSi//x (x equals 0. 52) Schottky contact has been successfully incorporated into a self-aligned-gate field-effect transistor.