Phase transformations of the ferromagnetic semiconductor Cd1-x MnxGeP2 at pressures of up to 5 GPa

Article abstract of DOI:10.1134/S0020168506080036

The electrical resistivity and Hall coefficient of Cd_1-x Mn _xGeP₂ (x=0-0.19) have been measured at 300 K and hydrostatic pressures of up to 5 GPa. The results indicate that CdGeP ₂ dissociates to CdP₂ and Ge at p = 3.2 GPa, while the incorporation of manganese stabilizes the crystal structure of CdGeP ₂, and Cd_0.81Mn_0.19GeP₂ undergoes a reversible phase transition at p = 3.5 GPa. Pleiades Publishing, Inc., 2006.