Y. Inaguma et al. / Thermochimica Acta 532 (2012) 168–171
171
equation based on the model by Struck and Fonger [31–33],
Acknowledgments
ꢀ
ꢁ
ꢂꢃ−1
I(T)
I0
s
1 + exp
A
E
The authors thank Mr. Y. Shimokawa and Mr. M. Kurihara for his
technical support in making high-temperature cell and are grateful
to the reviewers for their useful advice and comments. This work
was partially supported by a Grant-in-Aid for Scientific Research
(No. 17560598) of JSPS and the “High-Technology Research Center
Project” and the Promotional Project for Development of Strategic
Research base for Private Universities: matching fund subsidy from
Ministry of Education, Culture, Sports, Science and Technology,
Japan.
=
−
(1)
kBT
where A is the radiative decay rate of the 1D2 state of Pr3+, s is
the attempt rate for thermal quenching, kB is Boltzmann’s con-
stant, and E is the energy barrier for thermal quenching. When
using the data in the temperature range of 330–440 K for the
emission upon a photo-excitation of 333 nm, we obtained the
values, s/A = (1.1 0.8) × 109, E = (541 20) × 101 cm−1. Here, E is
considered to correspond to the energy gap from 1D2 state to
the cross-over point with the quenching state. On the other hand,
when we fitted the data in the temperature range of 225–440 K for
the emission upon a photo-excitation of 375 nm, we obtained the
values, s/A = (1.8 0.6) × 109, E = (551 9) × 101 cm−1. These values
errors. This indicates that the relaxation process including the elec-
tron transfer from the conduction band to the excited state 1D2 of
Pr3+ are the same for the band gap excitation and the IVCT excita-
tion (Fig. 2). The estimated energy of 5400–5500 cm−1 (0.7 eV) is
greater than that reported by Boutinaud et al. [13], E = 4000 cm−1
(0.5 eV) for CTO:Pr, which implies that the temperature depen-
dence of luminescence properties depend on samples of CTO:Pr
and there is a possibility to control the temperature dependence
of emission intensity, e.g. by changing the synthetic condition or
ion-doping. Further investigations are necessary to clarify the phys-
ical meaning of the energy barrier estimated from the temperature
dependence of emission intensity.
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The temperature dependence of luminescence properties for
CTO:Pr was examined in the temperature range 6–440 K. CTO: Pr
3
exhibits intense red emission ascribed to 1D2 → H4 of Pr3+ upon
the band gap and the IVCT (inter-valence charge transfer) photo-
excitation. Below 330 K, the emission intensity upon the band gap
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the electron transfer process accompanied by the band gap exci-
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330 K, the thermal quenching of red emission was then observed.
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