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Physical Chemistry Chemical Physics
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ARTICLE
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degenerate HOMO and LUMO levels of PM567:BODIPY-C5 are
off-resonance with the Fermi level of the Hg electrode at zero
bias i.e. V=0. For an applied positive bias (V>0), a rise in current
in the J-V (see Figure 4) is attributed to non-resonant tunneling.
A sharp rise in current above > 0.8V as per the J-V curve (Figure
5 (b) would be attributed to the alignment of the Fermi level of
Hg with HOMO energy levels. The alignment results in resonant
tunneling through HOMO. Even if the bilayer undergoes Ist
oxidation, the current keeps rising sharply because the
oxidation does not bring any significant changes in the
conformation (Figure 5(a)). Moreover, the LUMOs of oxidized
molecules come under the applied potential window and
consequently would also take part in electron transport
enhancing current further (Figure 5(b)). However, at further
higher bias, the current drops sharply, which could explain from
IInd oxidation of the bilayer. The doubly oxidized bilayer
undergoes a large conformational change, see Figure 5(a).
Consequently, the HOMO and LUMO levels are shifted and
become off-resonance to the Fermi level of Hg. As a result, the
current now can pass only through the direct tunneling process,
which manifests as the NDR effect in J-V measurements. We
also observed that the current always remains low in the
subsequent J-V cycles. However, if the electrodes are short-
circuited, the neutral state of the PM567:BODIPY-C5 is
regained, and hence, the NDR effect reappears. Thus it is
inferred that the conformational changes achieved after IInd
oxidation are quite stable.
On the other hand, for negative bias on Hg electrode i.e.
V<0, the current remains low as a very high bias is required to
obtain a resonance between the Hg Fermi level and LUMO of
the molecule. Moreover, the molecule does not undergo for any
reduction, and therefore, no additional feature other than non-
resonant tunneling current, appears in the negative bias. In the
case of monolayer i.e. Hg/BODIPY-C5/Si(n++) structure,
observed rectification behavior is similar to those of σ-π
molecular diodes, which arises because of resonant tunneling
through the HOMO of the π group [17]. Since BODIPY-C5
molecule does not undergo IInd oxidation and major
conformational changes do not occur, therefore no NDR effect
is observed in this case.
Conflicts of interest
There are no conflicts to declare.
DOI: 10.1039/C9CP05918K
Acknowledgements
We thank Dr. K. G. Bhusan for conducting the SIMS
measurements.
Notes and references
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Conclusions
In conclusion, we have demonstrated the strategy to tune the
electrical behavior of BODIPY dye grafted on Si. The tailor-made
BODIPY-C5 moiety grafted on Si showed rectification property
while BODIPY bilayers grafted on Si showed room temperature
NDR effect with PVR upto 1000. Our studies show that
rectification characteristics are due to resonant tunneling.
However, the NDR behaviour is associated with bias induced
conformational changes of the bilayer molecules by which the
resonant tunneling is changed to non-resonant tunneling.
These results are important for the development of resonant
tunnel diodes for molecules-on-Si hybrid nanoelectronics and
single molecular based futuristic electronics.
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