Effects of various atmospheres on the reduced-pressure CVD of Al2O3 thin films at low temperatures

Article abstract of DOI:10.1149/1.2096415

Aluminum oxide (Al₂O₃) is a stable insulator which has several advantages over SiO₂ for semiconductor device applications. Low temperature deposition is desirable if we consider use with semiconductors such as III-V and II

Full text of DOI:10.1149/1.2096415

Downloaded on 2014-05-21 to IP 205.208.3.23 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-05-21 to IP 205.208.3.23 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-05-21 to IP 205.208.3.23 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).