CRYSTALLOGRAPHIC ORIENTATION AND SURFACE MORPHOLOGY OF CHEMICAL VAPOR DEPOSITED Al2O3.

Article abstract of DOI:10.1149/1.2120043

Deposits of aluminum oxides (Al//2O//3) have been formed by a chemical vapor deposition technique involving the application of gaseous mixtures of AlCl//3, CO//2, and H//2 onto TiN-coated cemented carbide substrates. Reaction parameters (deposition temperature, system pressure, and composition of reactant gases) and their effects on the crystalline structure, crystallographic orientation, and surface morphology of the Al//2O//3 deposit have been studied. Al//2O//3 crystals maintain a corundum structure throughout the entire range of deposition conditions. Crystals of Al//2O//3 appear to nucleate in random orientations on the TiN layer, and further growth proceeds with (1014) and (1126) preferred orientations. The effects of reaction parameters on the final surface morphology of the Al//2O//3 deposit can be described by considering the supersaturation of the reactants and the growth rate.

Full text of DOI:10.1149/1.2120043

Downloaded on 2015-06-15 to IP 129.115.103.99 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-06-15 to IP 129.115.103.99 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-06-15 to IP 129.115.103.99 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-06-15 to IP 129.115.103.99 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-06-15 to IP 129.115.103.99 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).