
Journal of Chemical Physics p. 4914 - 4926 (1991)
Update date:2022-08-17
Topics:
Loh, S. K.
Jasinski, J. M.
Gas phase reactions of silyl radical, SiH3, are investigated at room temperature using tunable diode laser flash kinetic spectroscopy.Photolytic generation of silyl at 193 and 248 nm is demonstrated using several different precursor systems.The silyl recombination reaction, SiH3 + SiH3 -> Si2H6, is studied by quantitative measurement of SiH3 and attendant product densities.Analysis yields a refinement of the rate constant, krc = (7.9 +/- 2.9) * 10-11 cm3 molecule-1 s-1.By modeling silyl densities following photolysis of HCl in SiH4, bimolecular rate constants for H + SiH3 and H + SiH4 are determined to be (2 +/- 1) * 10-11 and (2.5 +/- 0.5) * 10-13 cm3 molecule-1 s-1, respectively.Reactions of SiH3 with SiD4, Si2H6, CCl4, and C3H6 (propylene) are studied under pseudo-first-order conditions.Derived upper limits to the rate constants show these reactions to be slow at room temperature.The data demonstrate the reactivity of silyl with open-shell (radical) species and the general inertness of silyl toward closed shell molecules.Under typical chemical vapor deposition conditions, SiH3 is, therefore, a kinetically long-lived species in the gas phase and consequently a potentially important film forming species under plasma and photochemical deposition conditions.
Changzhou Ruiping Chemical Co., Ltd
website:http://www.wishchem.com
Contact:+86-519-82324280
Address:No.288-1 Huacheng Road, Jintan
Contact:86-25-84683399
Address:605, Phoenix Herui Plaza, No.389, South Taiping Road, Nanjing, China 210002
Shanghai Kefu Chemical Co.,Ltd.
Contact:+86-21-34616196
Address:Room601-602, Xuhui Business Building, No.168, Yude Road, Shanghai
TIANJIN ZHONGXIN CHEMTECH CO.,LTD.
Contact:86-022-66880623
Address:FINANCIAL STREET WEST BLK 7, #308, NO.52 XINCHENG WEST ROAD, TEDA, TIANJIN, P.R.CHINA
guide(suzhou) fine materials co. ltd
Contact:0512-80972173
Address:21st Building, No.369 Lushan Rd, New District Suzhou China 215129
Doi:10.1111/febs.14661
(2018)Doi:10.1007/s13361-011-0140-x
(2011)Doi:10.1002/pssa.200563524
(2006)Doi:10.1002/zaac.201400375
(2014)Doi:10.1039/c4ra00770k
(2014)Doi:10.1039/d0dt03978k
(2021)