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A. Yildiz et al. / Physica B 485 (2016) 21–28
birefringence. In the DC phases, layers are strongly deformed and
organized in a sponge-like structure. Due to the special organi-
zation of the layers, the mesophases appear optically isotropic
between crossed polarizers on cooling from the isotropic liquid.
Dark and bright domains can be observed by the rotation of the
polarizer by a small angle and the brightness of these chiral do-
mains exchange on rotation of the polarizer in the opposite di-
rection. The optical activity in the DC phase of achiral bent-core
mesogens is attributed to the layer chirality or to the coupling of
molecular conformational chirality to the layer chirality 1 [27,28].
Due to their attractive functional properties, DC phases based
materials are of significant interest for a variety of application such
as organic semiconductors, thin film transistors ands solar cells
[29,30], NLO materials [31,32] and thin film polarizers [33]. Here
we investigated the influence of temperature on dielectric prop-
erties and conductivity mechanisms of the dark conglomerate (DC)
phase formed by a silylated achiral bent-core molecule with a
branched alkyl chain.
Transition temperatures were measured using a Mettler FP-82
HT hot stage and control unit in conjuction with a Leica polarizing
microscope. The associated enthalpies were obtained from DSC-
thermograms which were recorded on a Perkin-Elmer DSC-7,
heating and cooling rate: 10 °C minꢀ1
.
Spectroscopic data and mesomorphic properties for the target
material DBB had already been given in Ocak et al. [34]. The phase
transition temperatures and chemical structure of DBB are shown
in Fig. 1.
Siloxane substituted bent-core compound DBB exhibits dark
conglomerate phase with ferroelectric switching 34. On cooling
from the isotropic liquid, dark and bright domains have been ob-
served by rotating the polarizer by a small angle. The brightness of
these domains is exchanged on rotation of the polarizer in the
opposite direction. If the sample was rotated between the slightly
decrossed polarizers, the brightness of the chiral domains was not
changed. This indicates a conglomerate of domains with opposite
chirality as typical for dark conglomerate phases. Polarized light
optical photomicrographs on cooling are shown in Fig. 2.
2. Experimental
2.2. Preparation of liquid crystal cell
2.1. Mesomorphic properties of DBB liquid crystal
Empty cell has been prepared by indium–tin-oxide (ITO) coated
glass plates purchased by Instec Colorada Inc. The thickness of the
The synthesis of bent-core liquid crystal molecule, 3′-{4-[4-
(3,7-Dimethyloctyloxy) benzoyloxy] benzoyloxy} -4-{4-[4-[6-
(1,1,3,3,5,5,5- heptamethyltrisiloxan-1yl) hex-1-yloxy] benzoyloxy]
benzoyloxy} biphenyl (DBB) has been carried out by the procedure
in our previous work [34]. Firstly, 4-[4-(3,7-Dimethyloctyloxy)ben-
zoyloxy]benzoic acid has been attached to 4′-benzyloxybiphenyl-3-
ol [35] by esterification using dicyclohexylcarbodiimide (DCC) and
4-dimethylaminopyridine (DMAP) as catalysts to yield 4'-Benzy-
loxy-3-[4-(3,7-Dimethyloctyloxy)benzoyloxy]benzoyloxybiphenyl.
After hydrogenolytic debenzylation (H2, 10% Pd/C in THF) of the
benzylated intermediate and DCC esterification with 4-[4-(5-hex-
enyloxy)benzoyloxy]benzoic acid [36], olefine terminated bent-core
compound, 3′-{4-[4-(3,7-Dimethyloctyloxy)benzoyloxy]benzoyloxy}-
4-{4-[4-(5-hexenyloxy)benzoyloxy]benzoyloxy}biphenyl, has been
obtained. In the final step, 1,1,1,3,3,5,5-heptamethyltrisiloxane has
been attached to the olefinic precursor by a hydrosilylation reac-
tion using Karstedt's catalyst to yield the target siloxane sub-
stituted compound DBB [34] (Scheme 1).
empty cell was set at d¼970.2
μ
m by Mylar spacer. The ITO cell
has been filled with DBB by capillary action.
3. Results and discussions
3.1. Analysis of temperature effect on frequency dependent dielectric
parameters
The dielectric properties of DBB Liquid crystal have been ana-
lyzed by HP 4192A Impedance Analyzer within the frequency in-
terval of 5 Hz–15 MHz at various temperatures varying from 25 °C
to 150 °C.
The variations of the real part of the dielectric constant with
angular frequency at these temperatures are shown in Fig. 3.
As shown in Fig. 3, regardless of the operating temperature, the
real component of dielectric constant has a characteristic satura-
tion region and sharp decrease behavior as the angular frequency
increases from 104 to 108 rad/s. It has been observed that as the
Compound DBB was characterized 1H-, 13C-NMR and 29Si-NMR
(Varian Unity 500 and Varian Unity 400 spectrometers, in CDCl3
solutions, with tetramethylsilane as internal standard). Micro-
temperature increases, the maximum value of
decreases.
ε′ remarkably
analysis was performed using
analyzer.
a
Leco CHNS-932 elemental
In order to define the effect of temperature on dielectric re-
laxation type of DBB, the dispersion curves for each temperature
have been fitted by Origin Lab 8.5. The equation of fitting function
has been given in Eq. (1)
Compound DBB [34]: 1H-NMR:
δ
(ppm)¼8.29 (d; JE8.7 Hz;
2 Ar–H), 8.28 (d; JE8.7 Hz; 2 Ar–H), 8.15 (d; JE8.9 Hz; 2 Ar–H),
8.14 (d; JE8.9 Hz; 2 Ar–H), 7.66 (d; JE8.7 Hz; 2 Ar–H), 7.51–7.50
(m; 2 Ar–H), 7.45 (broad s; 1 Ar–H), 7.37 (d; JE8.7 Hz; 2 Ar–H),
7.36 (d; JE8.7 Hz; 2 Ar–H), 7.30 (d; JE8.7 Hz; 2 Ar–H), 7.23–7.19
(m, 1 Ar–H), 6.98 (d; JE8.9 Hz; 2 Ar–H), 6.97 (d; JE8.9 Hz; 2 Ar–
H), 4.11–4.08 (m; 2H OCH2), 4.04 (t; JE6.5 Hz; 2 H, OCH2), 1.85–
1.79 (m; 3H, CH2, CH), 1.66–1.47, 1.39–1.15 (2m; 15H, CH, 7 CH2),
0.95 (d; JE6.4 Hz; 3H, CH3), 0.87 (d; JE6.6 Hz; 6H, 2 CH3), 0.57–
0.53 (m; 2H, SiCH2), 0.08 [s; 9H, Si–(CH3)3], 0.06 [s; 6H, Si–(CH3)2],
⎡
1
sin απ
2
⎤
⎥
⎥
1−α
1 + (ωτ)
⎢
ε′(ω) = ε′
+ (ε′
− ε′
)
high freq.
low freq.
high freq.
⎢
1
1−α
2(1−α)
1 + 2(ωτ)
sin απ + (ωτ)
2
⎢
⎣
⎥
⎦
(1)
where
known, absorption coefficient parameter,
zero and one (0o r1). When equals to zero, it corresponds to
Debye type relaxation. The non-Debye type occurs when the value
of absorption coefficient varies between; 0o o1 region [37].
ε′high
Dielectric relaxation parameters ε′low freq. , f and
α
and
τ
are absorption coefficient and relaxation time. As is
α
takes values between
α
α
0.02 [s; 6H, Si–(CH3)2]. 13C-NMR:
δ (ppm)¼164.45, 164.43, 164.31,
α
,
, α, τ
freq.
164.30 (CO), 164.16, 163.69, 155.34, 151.26, 150.58, 141.99, 137.95,
126.86, 126.82, 121.99, 120.97 (Ar–C), 132.32, 131.74, 129.77, 128.24,
124.60, 122.08, 122.03, 120.62, 120.38, 114.42, 114.41 (Ar–CH),
68.45, 66.81 (OCH2), 39.31 (CH2), 37.35, 36.10 (CH), 33.15, 29.96,
29.13, 28.07, 25.80, 24.75, 23.26 (CH2), 22.78, 22.69, 19.76 (CH3),
c
dielectric strength, Δεs are given in Table 1. Since absorption
coefficient values for 25 °C, 75 °C and 150 °C temperatures are very
close to zero, the relaxation type has been considered as nearly-
Debye. On the other hand, since
α has been determined as far from
18.35 (SiCH2), 1.95, 1.41, 0.34 (CH3). 29Si-NMR:
δ
(ppm)¼7.37, 7.09,
zero for 125 °C temperature, the relaxation mechanism has been
determined as non-Debye type. The effect of temperature on ab-
sorption coefficient are also shown in Fig. 4.
ꢀ20.97. C63H78O12Si3 (1111.56); Anal. Calc.: C, 68.07; H, 7.07.
Found: C, 68.36; H, 6.76%.