Smith and Miller
nonintegral one). Compounds made at higher temperatures
seldom exhibit mixed-valent behavior, where the same metal
exists in two different formal oxidation states in the same
compound. A few examples from niobium chemistry are
known, however. The binary halide Nb3Cl8 actually forms
in the composition range Nb3-xCl8 (x e 0.44)23 and has
been described as a mixed (Nb4+)2Cl8/(Nb2.67+)3Cl8 system.12
Nb3Se5Cl7 has been formulated (Nb5+)(Nb4+)2(Se22-)2(Se2-)-
(Cl-)7.24 Another example is the peculiar compound Nb7S2I19,
where trigonal bipyramidal (Nb5+)I5 molecules are encap-
sulated inside a layered (Nb3+)3SI7 framework.25 In this
compound, however, the NbI5 units can almost be considered
a kind of molecule of crystallization since they are encap-
sulated in large channels and are not directly joined to the
extended Nb3SI7 framework. Such compounds, besides
providing structural novelty, are also interesting examples
of the delicate balance possible between competing redox
forces within a structure.26
Figure 1. SEM images of (left) a typical spiny ball formation of Ta4SI11;
(right) higher magnification of the end of a crystal.
decomposing to an uncharacterized white powder after several days.
In inert atmospheres, the compound appears to be indefinitely stable
toward decomposition up to temperatures of ≈525 °C, above which
only Ta6I14, TaI5, and TaS2 are observed by X-ray powder
diffraction.
Scanning Electron Microscopy. Verification of the presence
of tantalum, sulfur, and iodine in multiple single-crystal samples
of Ta4SI11 was carried out using a JEOL 6100 scanning electron
microscope operating at 15 kV.
During the course of our studies of the ternary chalco-
genide halide chemistry of tantalum, we have focused on
halide-rich compositions, usually near Ta3QX7. As part of
an attempt to synthesize Ta3SI7, we have discovered the novel
mixed-valent compound Ta4SI11, containing both trinuclear
X-ray Photoelectron Spectroscopy. XPS spectra were measured
using a PHI 5500 multitechnique surface analysis equipment
instrument, using Mg KR radiation (29.35 eV). Samples were
prepared by finely powdering several larger single crystals of Ta4-
SI11 in the glovebox immediately before use. The samples were
pressed onto indium foil in the glovebox and transferred to the XPS
instrument via an inert atmosphere carrier. Binding energies were
corrected for charging using the C 1s peak of adventitious carbon
(284.8 eV) as an internal reference.27 However, no significant
charging effects were observed, as C 1s always appeared at 284.8
eV. Additionally, large intact single crystals were mounted and
etched by sputtered Ar ions to remove any surface impurities
introduced during handling, to probe the presumably pristine interior
of the sample.
3+
Ta3 clusters and isolated Ta4+ ions amid undulating,
disordered sulfur and iodine layers. Herein, we report the
synthesis as well as structural and theoretical characterization
of this new structure type.
Experimental Section
Synthesis. Ta4SI11 was first observed as an abundant (ca. 50%)
side product from reactions of the elements in the molar ratio 3:1:7
Ta:S:I at 450 °C in sealed, evacuated borosilicate glass tubes,
designed to grow Ta3SI7 phases. Because of the inability to identify
the compound from its Guinier powder diffraction pattern, a single
crystal was selected and its structure solved (see below), yielding
the composition “Ta4SI11”. Tubes were then loaded at this stoichi-
ometry and heated at various temperatures to determine optimum
synthetic conditions. Ta4SI11 is best made by stoichiometric reaction
of the elements at 430 °C, for a duration of 2 weeks. Growth of
the compound is sensitive to temperature gradients in the tube:
highest (nearly quantitative) yields were obtained when the tube
furnace was packed tightly with asbestos, to smooth out uneven
temperature regions as much as possible. Heating a Ta4SI11 mixture
with an imposed temperature gradient leads to a mixture of phases,
including hexagonal and orthorhombic Ta3SI7, and Ta6I14 in addition
to Ta4SI11. The reagents used were tantalum “turnings” (Aesar,
99.99%, cleaned with an HF/HNO3/H2SO4 solution to remove
surface impurities, then rinsed with ethanol, and dried in vacuo at
500 °C), sulfur powder (Alfa, 99.9%, sublimed twice before use),
and iodine (Alfa, 99.9%, resublimed). All purified reagents and
products were handled in an Ar-filled glovebox.
Magnetic Susceptibility. Temperature-dependent magnetic sus-
ceptibility measurements were performed with a Quantum Design
SQUID magnetometer. Aggregations of Ta4SI11 bars were loaded
and sealed under an inert atmosphere in fused silica tubes. The
samples were kept in place by means of two tightly fitting fused
silica rods on either side of the sample. The samples were chosen
so that only larger single-crystal aggregations were used, to avoid
unwanted powder impurities and to minimize the surface area
susceptible to oxidation. Measurements were taken from 4 to 300
K, at a field strength of 3 T. The results are shown in Figure 2. A
room-temperature moment of 1.53 µB was measured, reproducible
over three separate runs.
X-ray Crystallography. A small silver bar (0.02 × 0.03 × 0.12
mm3) was sealed inside a glass capillary under argon and mounted
on a Siemens P4 diffractometer. A primitive orthorhombic unit cell
with dimensions a ) 16.135(3) Å, b ) 3.813(1) Å, and c ) 8.131-
(2) Å was indexed and refined on the basis of 45 reflections in the
range 6° e 2θ e 25°. Axial photographs confirmed these lattice
metrics. 2629 reflections were collected to 2θmax ) 55°, of which
685 were unique, 533 unique observed (I > 2σI), and Rint ) 0.0498.
An empirical absorption correction was applied to the data, using
the average of six complete “psi-scans” measured in well-separated
regions of reciprocal space. The structure was solved using direct
methods (SHELX-86) and refined with the SHELXL-93 crystal-
Ta4SI11 crystallizes as long silver bars, which often aggregate in
dense thickets (Figure 1). The brittle crystals splinter easily along
the long axis. Ta4SI11 is sensitive to oxygen and moisture,
(23) Hulliger, F. In Structural Chemistry of Layer-Type Phases; Le´vy, F.,
Ed.; Reidel: Dordrecht, 1976.
(24) Rijnsdorp, J.; Jellinek, F. J. Solid State Chem. 1979, 28, 149.
(25) Miller, G. J.; Lin, J. Angew. Chem. 1994, 106, 357; Angew. Chem.,
Int. Ed. Engl. 1994, 33, 334.
(27) Moulder, J. F.; Stickle, W. F.; Sobol, P. E.; Bomben, K. D. Handbook
of X-ray Photoelectron Spectroscopy; Chastain, J., Ed.; Perkin-Elmer
Corp.: Eden Prairie, MN, 1992.
(26) Rouxel, J. Comments Inorg. Chem. 1993, 14, 207.
4166 Inorganic Chemistry, Vol. 42, No. 13, 2003