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Journal of Materials Chemistry C
DOI: 10.1039/C6TC00650G
COMMUNICATION
Journal Name
Fig. 4. (a) Device architecture of ITO/PEDOT:PSS/ MAPb
structure of MAPb
1+2xCl2ꢀ2x. perovskite solar cells. (c) Current−voltage curves of MAPb
.9 (d) Top morphology of perovskite film on ITO/PEDOT:PSS substrates.
x
Mn1ꢀx
I
1+2xCl2ꢀ2x/PC61BM/Al (b) Crossꢀsectional SEM image showing the device
x
Mn1ꢀx
I
x
Mn1ꢀxI1+2xCl2ꢀ2x. perovskite solar cells x =
0
We have used only 15wt% of perovskite (1:1 ratio) solution for 3. (a) P. Gao, M. Grätzel and M. K. Nazeeruddin, Energy Environ.
Sci., 2014,
Kar, Energy Technol., 2016, DOI:10.1002/ente.201500534.
. G. E. Eperon, S. D. Stranks, C. Menelaou, M. B. Johnston, L. M.
Herz and H. J. Snaith, Energy Environ. Sci , 2014, , 982.
. N. K. Noel, S. D. Stranks, A. Abate, C. Wehrenfennig, S. Guarnera,
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7, 2448. (b) P. Dhingra, P. Singh, P. J. S. Rana, A. Garg, P.
device fabrication that give a very thin layer of perovskite ~125nm.
This gives insufficient charge carrier generation as a consequence
low short circuit current Isc is observed. In this way there is less
charge carrier generation due to insufficient thickness of absorber
layer which greatly suppress the device efficiency. Here the
outastanding fill factor is achieved due to complete surface coverage
of perovskite layer which leads to high shunt resistance (Rsh). The
4
.
7
5
device surged in term of Voc (1.19V) which is attributed to pin hole 6. D. Sabba, H. K. Mulmudi, R. R. Prabhakar, T. Krishnamoorthy, T.
free morphology of top layer that inturn reduce recombination to an Baikie, P. P. Boix, S. Mhaisalkar and N. Mathews J. Phys. Chem. C,
appreciable extent (Fig 4d). It may be one of the highest Voc 2015, 119, 1763.
7
. D. Cortecchia, H. A. Dewi, J. Yin, A. Bruno, S. Chen, T. Baikie, P.
reported yet via inverted planar architecture over other bilayered
HTM that incorporate polymer additive to increase the work
function of HTM in order make perfect ohmic contact.
P. Boix, M. Grätzel, S. Mhaisalkar, C. Soci, and N. Mathews Inorg.
Chem., DOI: 10.1021/acs.inorgchem.5b01896.
2
0
8
. J. Navas, A. S. Coronilla, J. J. Gallardo, N. C. Hernández, J. C.
Experiments with other composition is in their preliminary stage. we Piñero, R. Alcántara, C. F.Lorenzo, D. M. D.l. Santos, T.
have fabricated cell considering composition X=0.8 achieved ƞ Aguilar and J. M.Calleja, Nanoscale, 2015, , 6216.
. T. J. Jacobsson, M. Pazoki, A. Hagfeldt, and Tomas Edvinsson, J. Phys.
Chem. C, 2015, 119 , 25673.
0. Y. Y. Sun, J. Shi, J. Lian, W. Gao, M. L. Agiorgousis, P. Zhang and
S. Zhang, Nanoscale, DOI: 10.1039/c5nr04310g.
1. Y. Dang, Y. Liu, Y. Sun, D .Yuan, X. Liu, W. Lu, G. Liu, H. Xia
and X Tao, Cryst Eng Comm., 2015, 17, 665.
7
9
0
.83% , Voc 0.88 V, fill factor 19.2% but is still under optimisation.
There is plenty of room available for further invesigation such as to
explore the interfacial engineering of synthesized perovskite and
HTM/ETM interfaces. This communication may lead to deeper
insight due to presence of observable amount of Chlorine which is
1
1
one of the most debatable among scientific community. Since we 12. J. S. Manser, B. Reid and P. V. Kamat, J. Phys. Chem. C, 2015,
have used one step precursor deposition method, modification by 119, 17065.
other processing method for the growth of high quality crystal under 13. Y. K. Kuo , B. T. Liou, S. H.Yen and H. Y. Chu, Opt. Commun.,
2
1
004, 237, 363.
inert condition makes it unprecedented absorber.
4. H. S. Kim, C. R. Lee, J. H. Im, K. B. Lee, T. Moehl, A. Marchioro,
We thank Prof. Pradipta Banerjee, Director, Indian Institute
of Technology Roorkee, India for his constant support and
S. J. Moon, R. H. Baker, J. H. Yum , J. E. Moser , M. Grätzel and N. G.
encouragement. The authors would also like to thank Dr. Park, Sci. Rep., 2012, doi:10.1038/srep00591.
Saumya Dutta, Department of Electrical Engineering, IIT 15. J. Tauc, R. Grigorovici, and A. Vancu, Phys. Status Solidi, 1966,
1
5, 627.
Madras for performing IꢀV Measurement. P.K gratefully
acknowledges the Department of Science and Technology
1
6. E. Mosconi, C. Quarti, T. Ivanovska, G. Ruani and F. D. Angelis,
Phys.Chem.Chem.Phys., 2014, 16, 16137.
7. M. A. P.Osorio, R. L. Milot, M. R. Filip, J. B. Patel, L. M. Herz, M.
B. Johnston and F. Giustino, J. Phys. Chem.C, 2015, 119, 25703.
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York, 1999.
(SB/FT/CSꢀ135/2012), New Delhi, India and Council of
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Scientific and Industrial research (01(2796)/14/EMRꢀII) for
financial support. PJSR and PS acknowledge MHRD, India, for
their junior research fellowship.
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9. C. Zuo and L. Ding , Nanoscale
0. L. Meng, J. You, T. Fang Guo, and Y. Yang,
, 2014, 6, 9935.
A
cc. Chem.
Notes and references
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