Preparation of in X (X = P, As, Sb) thin films by electrochemical methods

Article abstract of DOI:10.1149/1.2096456

InSb and InAs were grown by direct electroplating. While as-deposited InSb thin films are crystalline, InAs layers show low crystallinity, even after annealing at 400°C. During the electrodeposition of InAs layers, photoelectrochemical activity is observed. InP thin films could be prepared by phosphorization of electroplated indium layers in a phosphorus atmosphere. The films were identified by x-ray diffraction to be InP in the sphalerite phase of good crystalline quality. Photoelectrochemical activity in InP films was tested in a HCI solution where the photoconductivity of prepared films was n-type.

Full text of DOI:10.1149/1.2096456

Downloaded on 2015-05-10 to IP 134.117.10.200 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-05-10 to IP 134.117.10.200 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-05-10 to IP 134.117.10.200 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-05-10 to IP 134.117.10.200 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).