Selective epitaxy of III-V compounds by low-temperature hydride VPE

Article abstract of DOI:10.1149/1.2087096

We report on the selective epitaxy of InP, GaAs, and InGaAs accomplished in a double-barrel hydride vapor-phase epitaxy (VPE) reactor, using Si₃N₄ films as the pattern-defining masks. All growths were done at temperatures as low as 482°-570°C and with reactant concentrations about 10X lower than in usual hydride VPE processes. Some of the experiments were done using separated Group III and Group V reactant streams to attempt atomic layer epitaxy growths. We also discuss room-temperature plasma etching with mixtures of CH₄ and H₂ and the regrowth of InP in the etched features. Completely selective, morphologically smooth regrowth was demonstrated at temperatures below 570°C and with low reactant concentrations. The above techniques could lead to novel processing procedures for a variety of devices, e.g., optoelectronic integrated circuits, optical waveguides, 2- and 3-dimensional quantum structures, etc.

Full text of DOI:10.1149/1.2087096

Downloaded on 2014-11-09 to IP 138.251.14.35 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-09 to IP 138.251.14.35 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-09 to IP 138.251.14.35 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-09 to IP 138.251.14.35 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-09 to IP 138.251.14.35 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).