R.L. Woo et al. / Surface Science 600 (2006) 4888–4895
4889
reaction is reversible. Then, TBP undergoes dissociative
adsorption and decomposes to form phosphorus dimers.
Sun and coworkers did not explain why the sticking prob-
ability of the group V precursors is so low on InP (001). In
addition, the datively bonded state has not been observed
experimentally.
chamber were turned off in order to avoid exposing the sur-
face to dissociated radicals.
The calculations were performed using density func-
tional theory (DFT) with the Becke three-parameter ex-
change functional and the Lee–Yang–Parr correlation
functional (B3LYP). We chose the (18s/14p/9d)/[6s/5p/
3d] contracted basis set for indium, the Dunning–Huzinaga
In this report, we present a study of phosphine and ter-
tiarybutylphosphine adsorption on the indium-rich InP
*
*
(11s/7p/1d)/[6s/4p/1d] contracted basis set (D95 ) for
phosphorus, the D95** polarized double-f basis set for
the surface hydrogen atoms and the D95 double-f basis
set for the terminating hydrogen atoms. In previous work
on hydrogen adsorption on P-rich indium phosphide sur-
face, Fu et al. have successfully applied a single frequency
shift for each mode to map the calculated vibrational fre-
quencies onto those observed by experiment [15]. We have
used the same approach here: the predicted P–H stretching
(
001)-(2 · 4) surface. Using vibrational spectroscopy, we
have identified the reaction intermediates, and have shown
that the datively bonded molecule plays a significant role in
the adsorption process.
2
. Experimental and theoretical methods
ꢀ
1
An indium phosphide film, 35 nm thick, was grown on
frequencies have been uniformly shifted down by 110 cm
an InP (001) substrate by MOCVD. The following
to correct for systematic errors in the calculations due to
deficiencies in the cluster models, neglect of anharmonicity,
and so forth.
conditions were used during growth: 530 ꢀC, 60 Torr of
ꢀ
4
hydrogen, 6.7 · 10 Torr of trimethylindium (TMIn),
ꢀ
3
7
.9 · 10 Torr of TBP (V/III ratio of 117), and a total
flow rate of 33 L/min (at 25 ꢀC and 760 Torr). Once the
growth was completed, the TBP and the hydrogen flows
were maintained until the sample was cooled down to
3
. Results
3.1. Phosphine adsorption
3
00 and 24 ꢀC, respectively. Then, the sample was trans-
ferred to an ultrahigh vacuum chamber without air expo-
Shown in Table 1 are the atomic percentages of indium
sure. In vacuum, the sample was annealed at 500 ꢀC for
and phosphorous measured by XPS on the clean and cov-
ered InP (001) surfaces. Since the InP (001)-(2 · 1) and
InP (001)-d(2 · 4) surfaces have known phosphorus cover-
ages of 1.00 and 0.125 [16], we used the atomic % of In and
P on the clean surfaces to estimate the coverages on those
1
5 min to obtain the (2 · 4) reconstruction.
After cooling the samples to 25 ꢀC, the surface structure
and composition were characterized by low energy electron
diffraction (LEED) and X-ray photoelectron spectroscopy
(
XPS). Core level photoemission spectra of the P 2p and
dosed with PH and TBP. Phosphine adsorption onto the
3
In 3d lines were collected with a PHI 3057 spectrometer
using magnesium Ka X-rays (hm = 1286.6 eV). All XPS
spectra were taken in small area mode with a 7ꢀ acceptance
angle and 23.5 eV pass energy. The detection angle with re-
spect to the surface normal was 25ꢀ. The P and In atom%
were determined from the integrated intensity of the P 2p
and In 3d photoemission peaks, dividing by their sensitivity
factors, 0.49 and 4.36, respectively. The P/In ratio was ob-
tained by dividing the P atom% by the In atom%.
InP (001)-(2 · 4) surface at 25 ꢀC caused the P/In ratio
measured by XPS to increase from 0.85 to 1.20. This sug-
gests that the surface contains over 2.0 monolayers of ad-
sorbed phosphorus. At the same time, the (2 · 4) LEED
pattern gradually converted to a (1 · 1), indicating that
the phosphine molecules reacted with the exposed In–P
and In–In dimers and disrupted the local ordering.
Shown in Fig. 1 are a series of infrared reflectance spec-
tra for different phosphine dosages on the (2 · 4) at 25 ꢀC
The infrared spectra were recorded by multiple internal
ꢀ6
(
1 L = 1 · 10 Torr s). In these spectra, there is a set of
reflections through a trapezoidal InP crystal, 40.0 ·
ꢀ1
sharp peaks between 2350 and 2200 cm
broad bands between 1750 and 1000 cm . The higher fre-
quency peaks are due to P–H stretching modes, while the
and several
3
1
[
0.0 · 0.64 mm . The long crystal axis was parallel to the
ꢀ1
110] direction. This crystal provided for 31 reflections
off the front face, which significantly enhanced the signal-
to-noise ratio. The group V molecules were introduced into
ꢀ
6
Table 1
the UHV chamber at 5.0 · 10 Torr through a leak valve.
Dosing was continued for up to 45 min to ensure that the
InP (001)-(2 · 4) surface was completely saturated with
The percentages of In and P atoms observed by XPS on the clean, PH
3
and TBP covered InP surfaces
a
Surface
In % P %
P/In
p
h (ML)
TBP or PH . A series of infrared spectra was collected be-
3
InP (001)-(2 · 1)
InP (001)-(2 · 4)
49.9
54.0
45.3
48.7
50.0
55.1
50.2
46.0
54.7
51.3
50.0
44.9
1.00
0.85
1.20
1.05
1.00
0.81
1.00
0.13
2.20
1.30
1.00
0.13
fore and during TBP and PH adsorption. These spectra
3
ꢀ
1
were recorded by taking 1024 scans at 8 cm resolution.
The spectra presented in this paper show the change in
reflectance (per reflection) that results from taking the ratio
of the sample spectrum after dosing to that of the clean sur-
face. During these experiments, all of the filaments in the
3
PH : InP (001)-(2 · 4) @ 25 ꢀC
TBP: InP (001)-(2 · 4) @ 25 ꢀC
PH
PH
a
3
: InP (001)-(2 · 4) @ 180 ꢀC
: InP (001)-(2 · 4) @ 270 ꢀC
3
Based on linear extrapolation.