3 (a) S. Sinharoy, Thin Solid Films, 1990, 187, 231; (b) E. Daran, L. E.
Bausa, A. Muñoz-Yagüe and C. Fontaine, Appl. Phys. Lett., 1993,
62, 2616; (c) H. Sato, Jpn. J. Appl. Phys., 1994, 33, L368.
4 (a) W. A. Wojtczak, P. F. Fleig and M. J. Hampden-Smith, Adv.
Organomet. Chem., 1996, 40, 215; (b) D. C. Bradley, Polyhedron,
1994, 13, 1111; (c) H. A. Meinema, K. Timmer, H. L. Linden and
C. I. M. A. Spee, Mater. Res. Soc. Symp. Proc., 1994, 335, 193; (d )
T. J. Marks, Pure Appl. Chem., 1995, 67, 313; (e) J. Brooks, H. O.
Davies, T. J. Leedham, A. C. Jones and A. Steiner, Chem. Vap.
Deposition, 2000, 6, 66.
5 (a) D. C. Bradley, M. Hasan, M. B. Hursthouse, M. Motevalli,
O. F. Z. Khan, R. G. Pritchard and J. O. Williams, J. Chem. Soc.,
Chem. Commun., 1992, 575; (b) S. R. Drake, M. B. Hursthouse,
K. M. A. Malik and D. J. Otway, J. Chem. Soc., Dalton Trans., 1993,
2883; (c) J. Brooks, H. O. Davies, T. J. Leedham, A. C. Jones and
A. Steiner, Chem. Vap. Deposition, 2000, 6, 66.
6 (a) K. G. Caulton, M. H. Chisholm, S. R. Drake and J. C.
Huffmann, J. Chem. Soc., Chem. Commun., 1990, 1498; (b) A. P.
Purdy, C. F. George and J. H. Callahan, Inorg. Chem., 1991, 30,
2812; (c) B. Borup, J. A. Samuels, W. E. Streib and K. G. Caulton,
Inorg. Chem., 1994, 33, 994; (d ) H. Vincent, F. Labrize and L. G.
Hubert-Pfalzgraf, Polyhedron, 1994, 13, 3323.
Fig. 4 The XRD patterns for the thin film samples obtained from
CVD experiments using complexes 2 and 1 as the source reagents: (a)
BaF2 and (b) SrF2.
7 (a) W. S. Rees, Jr., M. W. Carris and W. Hesse, Inorg. Chem., 1991,
30, 4479; (b) G. Rossetto, A. Polo, F. Benetollo, M. Porchia and
P. Zanella, Polyhedron, 1992, 11, 979; (c) W. A. Wojtczak, M. J.
Hampden-Smith and E. N. Duesler, Inorg. Chem., 1998, 37, 1781;
(d ) K. G. Caulton, M. H. Chisholm, S. R. Drake and K. Folting,
Inorg. Chem., 1991, 30, 1500.
8 (a) J. A. T. Norman and G. P. Pez, J. Chem. Soc., Chem. Commun.,
1991, 971; (b) S. R. Drake, M. B. Hursthouse, K. M. A. Malik and
S. A. S. Miller, J. Chem. Soc., Chem. Commun., 1993, 478; (c) S. R.
Drake, M. B. Hursthouse, K. M. A. Malik, S. A. S. Miller and D. J.
Otway, Inorg. Chem., 1993, 32, 4464; (d ) J. R. Babcock, D. D.
Benson, A. Wang, N. L. Edleman, J. A. Belot, M. V. Metz and T. J.
Marks, Chem. Vap. Deposition, 2000, 6, 180.
using 2 as source reagent under a carrier gas of Ar. The XRD
measurement showed formation of a polycrystalline texture on
the Pyrex glass substrate, giving a preferential orientation along
the (200) planes on the Si(100) surface (Fig. 4). The formation
of such highly ordered thin films is not uncommon as it
has been observed in CVD experiments using the Ba(hfac)2-
(tetraglyme) adduct (hfac = 1,1,1,5,5,5-hexafluoropentane-2,4-
dionate).20 Upon switching to complex 1, SrF2 thin films with a
preferred (220) orientation on a Si(100) surface was obtained
using a 1 : 1 mixture of Ar and O2 as carrier gas.
In summary, our results show that the designed synthesis of
alkaline-earth metal fluoroalkoxide complexes has been
achieved, for which the bonding mode of the fluoroalkoxide
ligands in the solid state is determined by the nature of the
central metal cation. All O and N donor atoms on the side
chain are coordinated to the metal cation and in the case of the
barium complex 2 two additional fluorine contacts are clearly
observed. The weak basicity of the alkoxide oxygen and the
coordinative unsaturation of the larger barium center make
these fluorine dative contacts energetically favorable. Moreover,
of particular interest is the formation of two rapidly inter-
convertible isomers in solution, which may be attributed to the
intramolecular cis–trans isomerization or the transformation
between the 8-coordinate bicapped octahedral and the 10-
coordinate bicapped square antiprismatic geometry. The
relatively high volatility of these two complexes makes them
optimum CVD source reagents for growing fluoride thin-films.
Accordingly, preservation of a certain degree of intramolecular
M ؒ ؒ ؒ F dative bonding is possible during precursor evap-
oration and vapor transport, which in turn can be used to
account for the rapid formation of the metal fluorides.
9 (a) W. A. Herrmann, N. W. Huber and O. Runte, Angew. Chem., Int.
Ed. Engl., 1995, 34, 2187; (b) W. A. Herrmann and N. W. Huber,
Chem. Ber., 1994, 127, 821.
10 W. S. Rees, Jr. and D. A. Moreno, J. Chem. Soc., Chem. Commun.,
1991, 1759.
11 (a) A. M. Bahl, S. Krishnaswamy, N. G. Massand, D. J. Burkey and
T. P. Hanusa, Inorg. Chem., 1997, 36, 5413; (b) L. G. Hubert-
Pfalzgraf, F. Labrize, C. Bois and J. Vaissermann, Polyhedron, 1994,
13, 2163; (c) D. L. Schulz, B. J. Hinds, D. A. Neumayer, C. L. Stern
and T. J. Marks, Chem. Mater., 1993, 5, 1605; (d ) J. S. Matthews,
O. Just, B. Obi-Johnson and W. S. Rees, Jr., Chem. Vap. Deposition,
2000, 6, 129.
12 J. E. Huheey, E. A. Keiter and R. L. Keiter, Inorganic Chemistry:
Principles of Structure and Reactivity, Harper Collins College
Publishers, New York, 4th edn., 1993, p. 116.
13 (a) G. M. Sheldrick, SHELXTL, version 5.10, Siemens Analytical
X-ray Instruments Inc., Madison, WI, 1998; (b) SMART and
SAINT, Siemens Analytical X-ray Instruments Inc., Madison, WI,
1995; (c) G. M. Sheldrick, SADABS, University of Göttingen,
Germany, 1996; (d ) C. K. Johnson, ORTEP, Report no. ORNL-
5138, Oak Ridge National Laboratory, Oak Ridge, TN, 1976.
14 I.-S. Chang and C. J. Willis, Can. J. Chem., 1977, 55, 2465.
15 B. Borup, W. E. Streib and K. G. Caulton, Inorg. Chem., 1997, 36,
5058.
16 P.-F. Hsu, Y. Chi, T.-W. Lin, C.-S. Liu, A. J. Carty and S.-M. Peng,
Chem. Vap. Deposition, 2001, 7, 28.
Acknowledgements
17 (a) J. A. Samuels, E. B. Lobkovsky, W. E. Streib, K. Folting, J. C.
Hoffman, J. W. Zwanziger and K. G. Caulton, J. Am. Chem. Soc.,
1993, 115, 5093; (b) A. P. Purdy and C. F. George, ACS Symp. Ser.,
1994, 555, 405; (c) Y. Chi, S. Ranjan, P.-W. Chung, C.-S. Liu, S.-M.
Peng and G.-H. Lee, J. Chem. Soc., Dalton Trans., 2000, 343; (d )
L. G. Hubert-Pfalzgraf, Coord. Chem. Rev., 1998, 178–180, 967; (e)
F. Labrize, L. G. Hubert-Pfalzgraf, J. C. Daran and S. Halut,
J. Chem. Soc., Chem. Commun., 1993, 1556; ( f ) A. P. Purdy and
C. F. George, Inorg. Chem., 1991, 30, 1970; (g) A. Drozov,
A. Pozhitkov, S. Troyanov and A. Pisarevsky, Polyhedron, 1996, 15,
1731.
18 D. A. Neumayer, J. A. Belot, R. L. Feezel, C. Reedy, C. L. Stern,
T. J. Marks, L. M. Liable-Sands and A. L. Rheingold, Inorg. Chem.,
1998, 37, 5625.
19 M. L. Hitchman, S. H. Shamlian, D. D. Gilliland, D. J.
Cole-Hamilton, J. A. P. Nash, S. C. Thompson and S. L. Cook,
J. Mater. Chem., 1995, 5, 47.
We thank the National Science Council, Taiwan, Republic of
China for funding (Grant No. NSC 89-2113-M-007-034).
References
1 (a) D. G. Gilliland, M. L. Hitchman, S. C. Thompson and D. J.
Cole-Hamilton, J. Phys. III, 1992, 2, 1381; (b) M. Tiitta and
L. Niinistö, Chem. Vap. Deposition, 1997, 3, 167; (c) J. A. P. Nash,
J. C. Barnes, D. J. Cole-Hamilton, B. C. Richards, S. L. Cook and
M. L. Hitchman, Adv. Mater. Opt. Electron., 1995, 5, 1; (d ) A. C.
Jones, Chem. Vap. Deposition, 1998, 4, 169; (e) W. Clegg, S. J. Coles,
E. K. Cope and F. S. Mair, Angew. Chem., Int. Ed., 1998, 37, 796.
2 (a) A. P. Purdy, A. D. Berry, R. T. Holm, M. Fatemi and D. K.
Gaskill, Inorg. Chem., 1989, 28, 2799; (b) H. Sato and S. Sugawara,
Inorg. Chem., 1993, 32, 1941; (c) O. Poncelet, J. Guilment and
D. Martin, J. Sol–Gel Sci. Technol., 1998, 13, 129.
20 G. Malandrino, F. Castelli and I. L. Fragala, Inorg. Chim. Acta,
1994, 224, 203.
2466
J. Chem. Soc., Dalton Trans., 2001, 2462–2466