In conclusion, we have presented a facile and efficient
synthesis of rigid carbazole dendrons up to 4th generation using
simple Ullmann coupling and detosylation reactions. Their
triphenylamine dendrimers showed chemically stable redox
and thermally stable amorphous properties with substantially
high glass transition temperatures (Tg) up to 401 1C. The
abilities of these dendrimers as solution-processed HTLs for
green OLEDs in terms of device performance and thermal
property were greater than those of a common hole-transporter
NPB. These dendrimers may also be promising materials for
long lifetime device applications, especially for high temperature
applications in OLEDs or other organic optoelectronic devices.
The use of these carbazole dendrons by forming dendritic
structures with other fluorescent or nonfluorescent core units
might be an effective way to prepare high Tg amorphous
materials for device applications.
This work was financially supported by the Thailand Research
Fund (MRU5080052). We acknowledge the scholarship support
from Center of Excellence for Innovation in Chemistry
(PERCHCIC), Ubon Ratchathani University, and the Strategic
Scholarships for Frontier Research Network for Research
Groups (CHE-RES-RG50) from the OHEC. Mr Preecha
Moonsin was supported by CHE Ph.D. Scholarship.
Fig. 2 (a) Structure, (b) EL spectra and (c) voltage–current–luminance
(J–V–L) characteristics of the OLEDs; device I (’), device II (K),
device III (m), device IV (.) and device V (%).
interface (B1.00 eV) is nearly five times higher than those for
hole migration at the HTL/Alq3 interface (B0.21 eV), under
the present device configuration GnCT would act only as
HTM, and Alq3 would act preferably as an electron blocker
more than as a hole blocker and charge recombination thus
confined to the Alq3 layer. More importantly, a stable emission
was obtained from all diodes with the EL spectra and CIE
coordinates did not change over the entire applied voltages
(ESIw). The light turn-on voltage at 1 cd mꢀ2 for all devices
was in the range of 2.88–3.13 V and the operating voltage at
100 cd mꢀ2 was in the range of 3.80–4.40 V, indicating that good
performance is achieved for all the devices (Fig. 2c and Table 1).
The device characteristics in terms of maximum brightness
(Lmax), turn on voltage and maximum luminous efficiency (Z)
clearly demonstrated that the hole-transporting abilities of
G2CT–G4CT were greater than NPB-based device (device
V). Device III having compound G3CT as HTL exhibited
the best performance with a high maximum brightness of
25 390 cd mꢀ2 for green OLED at 10.80 V, a low turn on
voltage of 2.92 V, a maximum luminous efficiency of 4.47 cd Aꢀ1
and a maximum external quantum efficiency of 0.21% (Fig. 2c
and ESIw). In order to explain the different efficiencies of the
OLED devices, analysis of band energy diagrams of all devices
was performed and it revealed that the injection barriers for
the gathered holes to transfer from the HTL to Alq3 are
0.59 eV (device I) and B0.42 eV (devices II–IV) (ESIw).
Accordingly, migration of a hole from the HTL to Alq3 layers
is more effective in devices II–IV compared to device I,
resulting in efficient charge recombination in the Alq3 emitting
layer and better device performance. It has been demonstrated
that the efficiency of an OLED depends both on the balance of
electrons and holes and the FF of the emitter.20 Although many
HTMs have been reported, in terms of the amorphous morphology,
significantly high Tg, solution processability and device efficiency,
these dendrimers are among good HTMs reported.
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This journal is The Royal Society of Chemistry 2012